GOALI: Side gated ultra narrow channel silicon MOSFETs and transport studies at nanometer scale

GOALI：侧栅超窄沟道硅 MOSFET 和纳米级传输研究

• 批准号: 0824171
• 负责人: Ali Gokirmak
• 金额: $ 19.96万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0824171&HistoricalAwards=false
• 关键词: GOALI; Side; gated; ultra; narrow

Side Gated Ultra Narrow Channel Silicon MOSFETs and Transport Studies at Nanometer ScaleThe objective of this research is experimental evaluation of side-gated small scale field effect transistors for extremely low leakage currents and electrostatic tuning, and electronic transport studies at nanometer scale using these devices. The approach is based on accumulation of holes driven from the substrate for electrostatic control of the channel potential and side interfaces, while an inversion layer is formed at the top-gate interface for current flow. This approach also enables additional functionality through multi-input operation. Electronic transport in ultra-small scale and quasi-1D structures will be studied. High resolution capacitance-voltage characterization will be performed utilizing non-linear characteristics of field effect transistors and ambient noise.Intellectual merit: Knowledge gained through this project will contribute to the understanding of electronic transport in small scale devices and restricted geometries which may lead to new device concepts for logic and memory. Very narrow devices with the possibility of side charge trapping for further confinement will enable basic studies of transport in electrostatically formed nanowires and quantum dots. Broader impact: This research will focus on a promising alternative structure to conventional transistors for certain applications. One graduate student will be supported through the project. Undergraduate students will also be involved in the electrical characterization of the devices. The results will be made available through publications and conference presentations. The project will be integrated in ongoing outreach programs in the School of Engineering for K-12 students and teachers to promote math and science education.

侧栅超窄沟道硅MOSFET和纳米级输运研究本研究的目的是实验评估侧栅小型场效应晶体管的极低漏电流和静电调谐，并在纳米级使用这些设备的电子输运研究。该方法是基于从衬底驱动的空穴的积累，用于沟道电势和侧界面的静电控制，而反型层形成在顶栅界面处用于电流流动。该方法还通过多输入操作实现附加功能。研究超小尺度和准一维结构中的电子输运。 高分辨率的电容-电压特性将利用场效应晶体管和环境noises.Intellectual优点的非线性特性进行：通过这个项目获得的知识将有助于理解电子输运在小规模的设备和限制的几何形状，这可能会导致新的设备概念的逻辑和存储器。非常窄的设备与侧电荷捕获进一步限制的可能性，将使静电形成的纳米线和量子点的传输的基础研究。更广泛的影响：这项研究将重点关注用于某些应用的传统晶体管的有前途的替代结构。一名研究生将通过该项目得到支持。本科生还将参与设备的电气表征。研究结果将通过出版物和会议介绍提供。该项目将被纳入工程学院正在进行的K-12学生和教师推广数学和科学教育的推广计划。