InGaN Quantum Dot Devices

InGaN 量子点器件

• 批准号: 0901477
• 负责人: Pei-Cheng Ku
• 金额: $ 29.8万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-06-01 至 2013-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0901477&HistoricalAwards=false
• 关键词: InGaN; Quantum; Dot; Devices

The objectives of this research are to epitaxially grow high quality InGaN ordered quantum dot (QD) arrays, to independently control the QD density, size, shape, and height, and to realize high efficiency InGaN QD light emitters and quantum optical devices. Intellectual Merit: InGaN QD devices can provide superior properties for short-wavelength optoelectronics, high power and high speed electronics, spintronics, nanophotonics, and quantum optics. Current issues of InGaN QD devices include nonuniformity, weak quantum confinement, and poor material qualities. The proposed work explores a new approach to fabricating high quality InGaN QD devices by avoiding the strain-induced 2D-3D transition in the Stranski-Krastanov growth and various issues associated with it. Through the integration of high quality InGaN QDs in light emitters and quantum-optical structures, the proposed work will provide a fundamental understanding of InGaN QD devices, elucidating the true potential of these devices without being masked by the poor quality of QDs. Broader Impacts: The broader impacts of this program include (1) the creation of a multidisciplinary (materials science, device physics, semiconductor processing, and optical science) scientific learning environment for students at a variety of levels (from K12 to graduate) and from several underrepresented groups; (2) the development of a new undergraduate course in Solid-State Lighting and Photovoltaics, and a new graduate course in Nanophotonics; (3) outreach projects in collaborations with (OE)^2 Office at the University of Michigan to develop teaching modules for local K12 schools. These teaching modules will then be disseminated to a broader audience via internet.

本研究的目标是外延生长高质量的InGaN有序量子点阵列，独立控制量子点的密度、尺寸、形状和高度，并实现高效率的InGaN量子点发光体和量子光学器件。智力优势：InGaN QD器件可以为短波长光电子学、高功率和高速电子学、自旋电子学、纳米光子学和量子光学提供上级特性。 InGaN量子点器件的当前问题包括不均匀性、弱量子限制和差的材料质量。本论文的研究工作为避免在Stranski-Krastanov生长过程中应变诱导的2D-3D相变以及与之相关的各种问题，探索了一种制备高质量InGaN量子点器件的新方法。通过将高质量InGaN量子点集成到发光体和量子光学结构中，本论文的研究工作将为人们对InGaN量子点器件的理解提供一个基础。阐明了这些器件的真正潜力，而不会被QD的质量差所掩盖。更广泛的影响：该计划的更广泛的影响包括（1）建立一个多学科的（材料科学、器件物理、半导体加工和光学科学）为不同层次的学生提供科学的学习环境（从K12到研究生）和几个代表性不足的群体;（2）在固态照明和光电子学的新本科课程的发展，以及在纳米光子学的新研究生课程;（3）与密歇根大学（OE）^2办公室合作开展外展项目，为当地K12学校开发教学模块。 这些教学单元将通过互联网向更广泛的受众传播。