Geometric Control of Strain and Optical Properties in III-Nitride Nanostructures
III 族氮化物纳米结构中应变和光学性质的几何控制
基本信息
- 批准号:1409529
- 负责人:
- 金额:$ 42.48万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2014
- 资助国家:美国
- 起止时间:2014-08-01 至 2018-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project is jointly funded by the Electronic and Photonic Materials (EPM) Program in the Division of Materials Research (DMR) and by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS).Non-Technical Description: Semiconductors made of group-III elements in the period table and nitrogen are important materials that have applications in high-power electronics and ultraviolet and visible light emitting devices used in defense and consumer systems. Engineering of electronic and optical properties of III-nitride nanostructures via strain, the topic of this research project, is expected to improve performance, reduce power consumption, and potentially lead to new system design concepts such as ultracompact light-weight devices for efficient lighting, portable or wearable displays, and biomedical imaging systems. The project increases public awareness of energy efficient and toxin-free lighting and display technologies, and translates research findings to industry via various education and outreach activities including student training, graduate and undergraduate curriculum development, and, technology transfer and start-up activities.Technical Description: The scientific objective of this project is to establish the relationship between strain, both symmetric and asymmetric, and optical properties in III-nitride nanostructures, more specifically, the InGaN nanodisk structures. The research combines both experimental and theoretical approaches. Various InGaN nanodisk structures exhibiting different indium compositions, active region thicknesses, dimensions, and shapes are synthesized and characterized for both structural and optical properties. The specific research tasks are: (1) to establish an experimentally validated model relating the strain to the radiative properties including emission wavelength, oscillator strength, and polarization; (2) to explore the role of higher energy states on the polarization properties of light emission in InGaN nanodisks; and (3) to extend the results to other related nitride semiconductor heterostructures..
该项目由材料研究部(DMR)的电子和光子材料(EPM)项目和电气、通信和网络系统部(ECCS)的电子、光子学和磁性器件(EPMD)项目共同资助。非技术描述:由元素周期表中的iii族元素和氮制成的半导体是在国防和消费系统中使用的大功率电子设备和紫外和可见光发射设备中应用的重要材料。该研究项目的主题是iii -氮化物纳米结构通过应变的电子和光学特性工程,预计将提高性能,降低功耗,并有可能导致新的系统设计概念,如用于高效照明的超紧凑轻质设备,便携式或可穿戴显示器,以及生物医学成像系统。该项目提高了公众对节能无毒照明和显示技术的认识,并通过各种教育和推广活动,包括学生培训、研究生和本科生课程开发、技术转让和创业活动,将研究成果转化为工业。技术描述:该项目的科学目标是建立iii -氮化物纳米结构(更具体地说,是InGaN纳米盘结构)中对称和非对称应变与光学性质之间的关系。这项研究结合了实验和理论方法。合成了不同铟成分、活性区厚度、尺寸和形状的InGaN纳米盘结构,并对其结构和光学性质进行了表征。具体研究任务为:(1)建立应变与发射波长、振子强度、极化等辐射特性关系的实验验证模型;(2)探索高能态对InGaN纳米片光发射极化特性的影响;(3)将结果推广到其他相关的氮化半导体异质结构。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Pei-Cheng Ku其他文献
A Novel, Wafer-Level Method to Fabricate Zero-Mode Waveguides for Single Molecule Detection
- DOI:
10.1016/j.bpj.2011.11.3164 - 发表时间:
2012-01-31 - 期刊:
- 影响因子:
- 作者:
Troy A. Lionberger;Chu-hsiang Teng;Pei-Cheng Ku;Edgar Meyhöfer - 通讯作者:
Edgar Meyhöfer
Strain effects in gallium nitride adsorption on defective and doped graphene: first-principle calculations
氮化镓对缺陷和掺杂石墨烯吸附的应变效应:第一原理计算
- DOI:
10.3390/cryst8020058 - 发表时间:
2018 - 期刊:
- 影响因子:2.7
- 作者:
Han Yan;Pei-Cheng Ku;Zhi-Yin Gan;Sheng Liu;Peng Li - 通讯作者:
Peng Li
Pei-Cheng Ku的其他文献
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{{ truncateString('Pei-Cheng Ku', 18)}}的其他基金
NSF-NSERC: Building a two-qubit controlled phase gate using laterally coupled semiconductor quantum dots
NSF-NSERC:使用横向耦合半导体量子点构建两个量子位控制的相位门
- 批准号:
2317047 - 财政年份:2023
- 资助金额:
$ 42.48万 - 项目类别:
Standard Grant
Broadening Participation in the Compound Semiconductor Week 2022
扩大 2022 年化合物半导体周的参与范围
- 批准号:
2228455 - 财政年份:2022
- 资助金额:
$ 42.48万 - 项目类别:
Standard Grant
I-Corps: Ultrahigh Brightness LED Luminaire Development for Commercial Applications
I-Corps:商业应用超高亮度 LED 灯具开发
- 批准号:
1236998 - 财政年份:2012
- 资助金额:
$ 42.48万 - 项目类别:
Standard Grant
Ultrafast Single-Photon Emitters Using Plasmonic Cavities
使用等离子体腔的超快单光子发射器
- 批准号:
1102127 - 财政年份:2011
- 资助金额:
$ 42.48万 - 项目类别:
Standard Grant
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