Injection-Locked Unidirectional Semiconductor Ring Lasers? A Novel Class of Ultrafast Transmitters

注入锁定单向半导体环形激光器？

• 批准号: 0901868
• 负责人: Marek Osinski
• 金额: $ 35.05万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-05-01 至 2013-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0901868&HistoricalAwards=false
• 关键词: Injection; Locked; Unidirectional; Semiconductor; Ring

Objective: Optical injection locking has been actively researched for its potential to improve ultrahigh frequency performance of semiconductor lasers for both digital and analog applications. The proposed research explores a new injection-locking scheme, based on unidirectional semiconductor ring lasers (USRLs) monolithically integrated with distributed Bragg reflector (DBR) laser masters, which is expected to result in low-cost ultrafast (over 100 GHz) functional chips that will be easy to use in practice. Both single-USRL as well as cascaded systems will be investigated. Experimental tests will be performed on ultrahigh frequency modulation of injection-locked microring USRLs. Both digital and analog modulation will be explored.Intellectual Merit: Semiconductor ring lasers have not yet been used for modulation bandwidth enhancement by injection-locking technique. The proposed research has the potential of revolutionizing the field of optical telecommunication by providing scientific basis for development of a novel class of ultra-high-speed integrated light sources based on micro-ring USRLs.The use of USRLs holds promise for development of ultra-high-speed chips suitable for use in optical transmission networks. The results will be important for both fundamental and applied physics of semiconductor lasers.Broader Impacts: First demonstration of modulation bandwidth enhancement in monolithically integrated injection-locked USRLs will open up new opportunities for creation of high performance, small size, low cost, ultra-high-speed integrated light sources for all levels of telecommunication networks. Development of inexpensive ultrafast chips operating at speeds exceeding 100 GHz will have a huge societal impact by increasing the transmission capacity of fiber-based networks.

目的：光注入锁定技术在提高半导体激光器的倍频性能方面有着巨大的潜力，在数字和模拟应用中得到了广泛的研究。拟议的研究探索了一种新的注入锁定方案，基于单向半导体环形激光器（USRL）单片集成与分布式布拉格反射器（DBR）激光主机，预计将导致低成本超快（超过100 GHz）的功能芯片，将易于在实践中使用。单USRL以及级联系统将进行调查。本文将对注入锁定微腔超稳激光器的倍频调制进行实验测试。本课程将探讨数位及类比式调变。智慧上的优点：半导体环形雷射尚未被用来借由注入锁定技术来增加调变频宽。该研究为基于微环超快激光器的新型超高速集成光源的开发提供了科学依据，有望为光通信领域带来革命性的变化，并有望开发出适用于光传输网络的超高速芯片。结果将是重要的基础和应用物理的半导体laser.Broader影响：第一次演示的调制带宽增强单片集成注入锁定USRL将开辟新的机会，创造高性能，小尺寸，低成本，超高速集成光源的所有级别的电信网络。以超过100 GHz的速度运行的廉价超快芯片的开发将通过增加基于光纤的网络的传输容量而产生巨大的社会影响。