RUI: Precursor Design and Atomic Layer Deposition of High-k Dielectric Thin Films

RUI：高 k 介电薄膜的前驱体设计和原子层沉积

• 批准号: 0911061
• 负责人: Bradley Fahlman
• 金额: $ 25.5万
• 依托单位: Central Michigan University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0911061&HistoricalAwards=false
• 关键词: RUI; Precursor; Design; Atomic; Layer

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports chemistry by Professor Bradley D. Fahlman at Central Michigan University to develop new materials for next-generation nonvolatile memory devices (e.g., portable hard drives, memory sticks, etc.). Hafnium oxide (HfO2), a high-k dielectric material, is of increasing importance for the microelectronics industry, in order to continue Moore's Law - doubling the number of transistors on an integrated circuit every 1.5 - 2 years. This project greatly expands the largely unexplored chemistry of hafnium through the design of novel hafnium complexes for vapor deposition applications. Our work also explores the direct incorporation of nanocrystals into high-k dielectric thin films via atomic layer deposition (ALD). Undergraduate students will gain hands-on experience in a variety of inorganic/organic and nanomaterials synthesis, as well as a suite of surface characterization techniques - rather atypical for a traditional undergraduate experience. This project also entails undergraduate student mentoring opportunities for postdoctoral and graduate students - of utmost importance for their future careers. Undergraduate students from the local Chippewa Native-American tribe participate in the project; this represents part of an important objective for Central Michigan University; namely, increasing the number of majors in the sciences within this underrepresented group. The results of this fundamental research project will directly influence the future of commercial microelectronic devices, ensuring that improvements in computational speeds continue to be realized.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。这个无机、生物无机和有机金属化学项目的研究奖支持中密歇根大学的Bradley D. Fahlman教授开发下一代非易失性存储设备（例如，便携式硬盘驱动器，记忆棒等）的新材料。氧化铪（HfO2）是一种高k介电材料，对于微电子工业来说越来越重要，以继续摩尔定律——每1.5 - 2年集成电路上晶体管数量翻一番。该项目通过设计用于气相沉积应用的新型铪配合物，极大地扩展了大部分未开发的铪化学。我们的工作还探索了通过原子层沉积（ALD）将纳米晶体直接结合到高k介电薄膜中。本科学生将获得各种无机/有机和纳米材料合成的实践经验，以及一套表面表征技术-这对于传统的本科经验来说是非典型的。该项目还为博士后和研究生提供本科生指导机会，这对他们未来的职业生涯至关重要。来自当地印第安部落Chippewa的本科生参与了这个项目；这是中密歇根大学重要目标的一部分；也就是说，在这个代表性不足的群体中增加理科专业的数量。这个基础研究项目的结果将直接影响商业微电子设备的未来，确保计算速度的提高继续实现。