SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes

SBIR 第一阶段：具有易失性和非易失性模式的新型半导体存储器

• 批准号: 0912771
• 负责人: Yuniarto Widjaja
• 金额: $ 9.3万
• 依托单位: Zeno Semiconductor, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0912771&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Semiconductor; Memory

This Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

这个小型企业创新研究第一阶段项目旨在展示一种新型存储器的高密度可行性，这种存储器具有易失性和非易失性功能。这种存储器结合了非易失性存储器在断电情况下保留信息的能力（例如闪存）和易失性存储器（例如静态随机存取存储器（SRAM）或动态随机存取存储器（DRAM））的快速访问速度和可靠性。这种存储器使用硅基制造工艺制造，无需新材料或新工艺技术的开发。所提出的存储器的许多应用之一是实现功率高效的计算应用和移动的设备。本提案中提出的高能效内存可将数据中心的整体功耗降低高达75%。该奖项由2009年美国复苏和再投资法案（公法111-5）资助。