SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes

这个小型企业创新研究第一阶段项目旨在展示一种新型存储器的高密度可行性，这种存储器具有易失性和非易失性功能。这种存储器结合了非易失性存储器在没有电力的情况下保持信息的能力（诸如闪存）和易失性存储器的快速存取速度和可靠性（诸如静态随机存取存储器（SRAM）或动态随机存取存储器（DRAM））。这种存储器使用硅基制造工艺制造，无需新材料或新工艺技术的开发。所提出的存储器的许多应用之一是实现功率高效的计算应用和移动的设备。本提案中提出的高能效内存可将数据中心的整体功耗降低高达75%。该奖项由2009年美国复苏和再投资法案（公法111-5）资助。

This Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).