SBIR Phase II: A Novel Memory Having Both Volatile and Non-Volatile Modes For High Performance, Low Power Applications

SBIR 第二阶段：一种具有易失性和非易失性模式的新型存储器，适用于高性能、低功耗应用

• 批准号: 1230413
• 负责人: Yuniarto Widjaja
• 金额: $ 49.37万
• 依托单位: Zeno Semiconductor, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-01 至 2016-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1230413&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Novel; Memory

This Small Business Innovation Research Phase II project seeks to continue the development of a novel one-transistor memory device, which has both volatile and non-volatile functionality, through collaboration with a commercial foundry partner. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM)). In addition to the memory cell development and optimization, a memory block will also be developed to initiate commercialization effort of the memory technology.The broader impact/commercial potential of this project is to enable power-efficient computing applications and mobile devices. For example, it can be used to reduce power consumptions in data centers. Data centers' annual energy consumption is estimated to be 150 billion kWh, about twice the capacity of the current US solar panel. A power-efficient memory such as the one proposed in this proposal can reduce the overall data centers' power consumption by up to 75%. Another application is to provide an integrated memory solution. Many electronic devices currently employ multiple types of memory, due to their own distinct characteristics. The proposed device will be able to combine the different types of memory into a single memory device, simplifying the manufacturing process for embedded memories.

这个小型企业创新研究第二阶段项目寻求通过与一家商业代工合作伙伴合作，继续开发具有易失性和非易失性功能的新型单晶体管存储设备。这种存储器结合了非易失性存储器在没有电源的情况下保留信息的能力(例如闪存)和易失性存储器(例如静态随机存取存储器(SRAM))的快速访问速度和可靠性。除了存储单元的开发和优化，还将开发存储块，以启动存储技术的商业化努力。该项目更广泛的影响/商业潜力是使能效计算应用和移动设备成为可能。例如，它可用于降低数据中心的功耗。数据中心的年能耗估计为1500亿千瓦时，大约是目前美国太阳能电池板产能的两倍。像本提案中建议的那样的高能效内存可以将整个数据中心的功耗降低高达75%。另一个应用是提供集成的存储解决方案。由于其自身独特的特性，许多电子设备目前使用多种类型的存储器。所提出的设备将能够将不同类型的存储器组合成单个存储器设备，从而简化嵌入式存储器的制造过程。