SBIR Phase I: Inorganic Electron Beam Resist for High Throughput Nanolithography

该小型企业创新研究第一阶段项目将评估开发一种强大的高速无机电子束抗蚀剂平台的技术可行性，该平台将能够制造特征尺寸为30 nm的电子器件。高速、低线宽粗糙度、足够的抗蚀刻性的要求对于这些特征尺寸的图案形成装置是极端的。该项目的成功将对ITRS半导体路线图沿着持续进展产生相当大的影响，该路线图支持几个数十亿美元的行业。将实现新的器件性能水平，通过引入先进的电子产品提供广泛的社会影响，同时提高半导体制造业的国内就业前景。更广泛的科学和工程研究界将受益于在纳米尺度的极端构建新颖设备的新技术。该奖项由2009年《美国复苏和再投资法案》（公共法111-5）资助。

This Small Business Innovation Research Phase I project will assess the technical feasibility of developing a robust, high-speed inorganic electron-beam resist platform that will enable the manufacture of electronic devices with feature sizes 30 nm. The requirements of high speed, low line-width roughness, sufficient etch resistance are extreme for patterning devices at these feature sizes. Success in the project will have a considerable impact on continued progress along the ITRS semiconductor roadmap, which supports several multibillion dollar industries. New levels of device performance will be enabled, providing broad societal impacts through the introduction of advanced electronics, while enhancing prospects for domestic employment in semiconductor manufacturing. The broader scientific and engineering research communities will benefit from new techniques to build novel devices at the extreme end of the nanoscale.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).