MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education

MRI：获取用于纳米工程 AlGaInN 光电器件的分子束外延系统：研究、培训和教育

• 批准号: 0923013
• 负责人: Sergey Nikishin
• 金额: $ 64.65万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0923013&HistoricalAwards=false
• 关键词: MRI; Acquisition; Molecular; Beam; Epitaxy

We propose the acquisition of a plasma-assisted molecular beam epitaxy (PAMBE) system. The state-of-the-art crystal growth system will use plasma-generated active nitrogen to greatly reduce the presence of critical impurities. The system will benefit a large, interdisciplinary group of researchers including collaborators from academia and industry. The PAMBE system will become a focal point of our extensive laboratory, opening new frontiers for novel optoelectronic devices based on group-III-Nitride (III-N) semiconductors. It will benefit ongoing projects and anchor new and transformative research and education efforts based on InN, In-rich InGaN, and AlInN. We will develop intrinsic III-N materials with low concentrations of unwanted impurities, specifically carbon, oxygen, and hydrogen. Sources with low vapor pressure will facilitate maintenance of a pristine growth environment for intentional doping experiments. The new system will open new areas of III-N materials research with numerous applications including: deep ultraviolet light emitting diodes, BioFETs for use in tag-free, portable DNA sensors, heterostructure-based field effect transistors, and tandem photovoltaic cells. Research in optoelectronic materials has tremendous potential benefit for our national economy such as development of efficient solid-state industrial and domestic lighting sources promises enormous energy savings, and applications in biological, chemical, and environmental sensing, addressing present and anticipated national security needs. The PAMBE apparatus will impact ongoing interdisciplinary research and will enhance our interactions with industry as well as other universities and colleges. Research, education, and training are an integrated to provide excellent technical, team, and leadership building opportunities for students.

我们提议获得等离子体辅助分子束外延（PAMBE）系统。最先进的晶体生长系统将使用等离子体产生的活性氮来大大减少关键杂质的存在。该系统将使包括学术界和工业界合作者在内的大型跨学科研究小组受益。PAMBE系统将成为我们广泛实验室的焦点，为基于iii族氮化物（III-N）半导体的新型光电器件开辟新的领域。它将有利于正在进行的项目，并锚定基于InN、In-rich InGaN和AlInN的新的变革性研究和教育工作。我们将开发具有低浓度不需要的杂质，特别是碳，氧和氢的本征III-N材料。具有低蒸汽压的源将有助于维持原始的生长环境，以进行有意掺杂实验。新系统将开辟III-N材料研究的新领域，其众多应用包括：深紫外发光二极管，用于无标签的生物场效应管，便携式DNA传感器，基于异质结构的场效应晶体管和串联光伏电池。光电材料的研究对我们的国民经济有着巨大的潜在利益，如开发高效的固态工业和家用照明光源，承诺巨大的能源节约，以及在生物，化学和环境传感方面的应用，解决当前和未来的国家安全需求。PAMBE仪器将影响正在进行的跨学科研究，并将加强我们与工业界以及其他大学和学院的互动。研究、教育和培训是一个整体，为学生提供优秀的技术、团队和领导力建设机会。