ANN NIRT: GOALI : Nano-Engineering Efficient Optoelectronic Devices

ANN NIRT:GOALI:纳米工程高效光电器件

基本信息

  • 批准号:
    0609416
  • 负责人:
  • 金额:
    $ 100万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2006
  • 资助国家:
    美国
  • 起止时间:
    2006-06-15 至 2012-05-31
  • 项目状态:
    已结题

项目摘要

Intellectual Merit: This NIRT project focuses on the development of nanometer-scale photonic structures to overcome critical obstacles limiting efficiency of optoelectronic devices. Novel concepts will be formulated and applied to the technologically important AlGaN and InGaN semiconductors leading to efficient light emitting diodes (LEDs) and laser diodes (LDs) operating in the green and deep ultraviolet wavelength regions. The project encompasses growth of novel optoelectronic nanostructures, studies of their physical properties, and device design, fabrication, and testing. These activities span a broad range of technical and educational issues in science and engineering. The major proposal thrusts are: (1) substrate engineering and nanotemplating; (2) active region nanoengineering; (3) and nanophotonic surfaces for enhanced light extraction. Ordered nanostructures grown with vertical and lateral size control will allow tailoring of properties at the quantum level, leading to new device concepts. The use of nano-engineered photonic crystals to modify and control emission properties promises to improve LED performance and enable demonstration of LDs. Individually these three areas will improve internal and external efficiencies. Integrated, they will enhance design and fabrication of light emitters. The proposal will be carried out in partnership with Technology and Device International (TDI). Broader Impacts: The devices described have numerous potential applications. Commercially, these sources are ideally suited for projection displays and lighting. Miniaturized wavelength-tuned sources are critical for portable biohazard detection. The research plan will be integrated with educational development. Students will be trained in advanced interdisciplinary research central to our nation's technical needs. As part of our GOALI agreement, they will collaborate closely with TDI scientists and engineers, greatly enriching their educational experience. New components of classroom and laboratory courses will incorporate fabrication of active nanostructures and nanosystems, drawing students from diverse disciplines. Finally, active recruitment of students, emphasizing under-represented groups, will address national workforce needs in science and engineering.
智力优势:这个NIRT项目专注于纳米尺度光子结构的发展,以克服限制光电器件效率的关键障碍。新的概念将被制定并应用于技术上重要的AlGaN和InGaN半导体,从而导致在绿色和深紫外波长区域工作的高效发光二极管(led)和激光二极管(ld)。该项目包括新型光电纳米结构的发展,其物理性质的研究,以及器件的设计、制造和测试。这些活动涵盖了科学和工程领域广泛的技术和教育问题。主要的建议重点是:(1)衬底工程和纳米模板;(2)活性区纳米工程;(3)和纳米光子表面增强光提取。通过纵向和横向尺寸控制生长的有序纳米结构将允许在量子水平上定制特性,从而产生新的器件概念。使用纳米工程光子晶体来修改和控制发光特性有望改善LED的性能并使LED的演示成为可能。这三个领域将分别提高内部和外部效率。综合起来,它们将加强光发射器的设计和制造。该提案将与技术与设备国际(TDI)合作实施。更广泛的影响:所描述的设备具有许多潜在的应用。商业上,这些光源非常适合投影显示和照明。小型化波长调谐光源对于便携式生物危害检测至关重要。研究计划将与教育发展相结合。学生将接受高级跨学科研究方面的培训,这对我国的技术需求至关重要。作为我们GOALI协议的一部分,他们将与TDI的科学家和工程师密切合作,极大地丰富他们的教育经验。课堂和实验课程的新组成部分将包括活性纳米结构和纳米系统的制造,吸引来自不同学科的学生。最后,积极招收学生,强调代表性不足的群体,将解决国家在科学和工程方面的劳动力需求。

项目成果

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Sergey Nikishin其他文献

Sergey Nikishin的其他文献

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{{ truncateString('Sergey Nikishin', 18)}}的其他基金

Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology
合作研究:硅鳍片上的垂直 GaN 纳米结构用于电力电子以及未来与硅技术的集成
  • 批准号:
    1028791
  • 财政年份:
    2010
  • 资助金额:
    $ 100万
  • 项目类别:
    Standard Grant
MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education
MRI:获取用于纳米工程 AlGaInN 光电器件的分子束外延系统:研究、培训和教育
  • 批准号:
    0923013
  • 财政年份:
    2009
  • 资助金额:
    $ 100万
  • 项目类别:
    Standard Grant

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