Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology

合作研究：硅鳍片上的垂直 GaN 纳米结构用于电力电子以及未来与硅技术的集成

• 批准号: 1028791
• 负责人: Sergey Nikishin
• 金额: $ 21万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-15 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1028791&HistoricalAwards=false
• 关键词: Collaborative; Research; Vertical; GaN; Nanostructures

Overview: The objective of this project is innovative research for developing III-nitride fin field-effect transistors on silicon substrate. The approach utilizes silicon support fins with (111)-oriented sidewalls for selective area growth of symmetric III-nitride heterostructures using metallorganic vapor phase epitaxy. Materials growth, nanofabrication, simulation and modeling, and electrical tests will be carried out to exploit the enormous flexibility in engineering the fin energy band structure, leading to unprecedented control of electronic properties. Intellectual merit: This proposal presents transformative ideas, leading to novel and effective electronic device architectures for high-power transistors on a silicon platform. The proposed innovations will address fundamental and applied research related to materials growth, nano- and micro-scale design and development of wide band gap semiconductor transistors, and fabrication principles for fin architectures on structured silicon substrates. The III-nitride/Si fins will exhibit new band structure physics that will be exploited for innovative enhancement-mode devices. Broader impacts: Efficient transistors are needed for high power radio-frequency modulation in wireless communications, DC power conversion, and imaging. Nanoscale biological and chemical sensors are needed for environmental monitoring, medical diagnostics, and homeland security. Normal-off state transistors for chip-scale miniature electronics are important for future ?green energy? applications. This proposal will enhance graduate and undergraduate education opportunities at Texas A&M and Texas Tech Universities and, strengthen diversity at each institution, lead to REU supplement requests, and initiate a program targeting junior and senior high students who are demographically underrepresented in science and engineering.

概述：本课题的目标是在硅衬底上进行iii -氮化翅片场效应晶体管的创新研究。该方法利用具有（111）取向侧壁的硅支撑片，利用金属有机气相外延实现对称iii -氮化物异质结构的选择性面积生长。材料生长、纳米制造、模拟和建模以及电学测试将会进行，以利用工程鳍能带结构的巨大灵活性，从而实现对电子特性的前所未有的控制。智力优势：该提案提出了变革性的想法，为硅平台上的高功率晶体管提供了新颖有效的电子器件架构。提出的创新将涉及与材料生长，纳米和微尺度设计和宽带隙半导体晶体管的开发以及结构化硅衬底上的翅片结构制造原理相关的基础和应用研究。iii -氮化物/Si翅片将展示新的能带结构物理，将用于创新的增强模式器件。更广泛的影响：在无线通信、直流电源转换和成像等领域，高功率射频调制需要高效晶体管。环境监测、医疗诊断和国土安全都需要纳米级生物和化学传感器。芯片级微型电子器件的常关态晶体管对未来很重要？绿色能源吗?应用程序。该提案将增加德克萨斯农工大学和德克萨斯理工大学的研究生和本科教育机会，并加强每个机构的多样性，导致REU补充请求，并启动针对初中和高中学生的计划，这些学生在科学和工程方面的人口代表性不足。