SBIR Phase II: Dual Magnetic Tunnel Junction (DMTJ) Materials and Structures for STT-RAM

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。这个小型企业创新研究（SBIR）二期项目将解决将自旋转移扭矩（STT）转换现象从研究环境成功转化为商业化所需的材料创新。第二阶段项目的目标是在三个逐渐变小的技术节点上提供双磁隧道结（DMTJ）技术，并开发DMTJ设备的数据包，包括材料结构、读写性能和可靠性特性，这些数据可以转让给许可方进行商业化。该项目的成果将是基于STT的随机存取存储器（STT-RAM），这是一种快速、高密度、低功耗、非易失性的通用存储器解决方案，有可能取代嵌入式和独立存储器市场上的主流半导体存储器，如静态RAM、动态RAM和闪存，并在半导体行业创造全新的领域。STT-RAM不仅可以单独取代这些存储器，而且从系统的角度来看，STT-RAM提供了彻底改变电子系统架构的潜力，可以显着降低功耗，组件数量，面积和成本，同时显着提高系统功能和性能。

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).This Small Business Innovative Research (SBIR) Phase II project will address material innovations required to successfully take spin-transfer torque (STT) switching phenomenon from a research environment to commercialization. The goal of this Phase II project is to deliver Dual Magnetic Tunnel Junction (DMTJ) technology at three progressively smaller technology nodes, and to develop a package of data on DMTJ devices, including materials structure, read and write performance, and reliability characteristics, that can be transferred to licensees for commercialization.The outcome of this project will be STT based Random Access memory (STT-RAM), a fast, high density, low power, nonvolatile universal memory solution that has the potential to displace mainstream semiconductor memories such as Static RAM, Dynamic RAM and Flash in both embedded and standalone memory markets, and create entirely new sectors in the semiconductor industry. Not only can STT-RAM replace each of these memories individually, but from a system perspective, STT-RAM offers the potential to revolutionize electronic system architectures in a way that can significantly reduce power, component count, area and cost, while dramatically improving system functionality and performance.