GaN and Related Nitride Nanowires for Nanoscale Device Applications

用于纳米级器件应用的 GaN 和相关氮化物纳米线

• 批准号: 0925285
• 负责人: Latika Menon
• 金额: $ 33万
• 依托单位: Northeastern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0925285&HistoricalAwards=false
• 关键词: GaN; Related; Nitride; Nanowires; Nanoscale

The objective of this research is to develop epitaxial GaN and related alloy based nanowires and investigate their magnetic, optical and electrical properties for nanoelectronic device applications. The approach will utilize a controlled catalyst deposition followed by chemical vapor deposition methods. Intellectual Merit: The new technology involves controlled deposition of Ni catalyst nanoparticles with small dimensions followed by chemical vapor deposition leading to the production of GaN epitaxial nanowire networks on the substrate. The crystal structure of the new kind of GaN nanowires is of the cubic zinc blende type, technologically more significant than typically grown wurtzite GaN. Growth procedure for such epitaxial GaN nanowire networks and the related alloys will be optimized in this project; magnetic properties of GaMnN nanowires will be studied by means of magnetization and magnetic force microscopy; optical properties such as photoluminescence, Raman spectra will be investigated; electrical properties: FET characteristics and LED characteristics will be investigated.Broad Impact: The epitaxial configuration of the nanowires is perfectly suited for device fabrication - the technology is high-throughput, easily scalable to wafer-sizes and compatible with advanced micro and nanoengineering processes. The technique allows for complete control and flexibility over tailoring the structure, optical and transport properties. From a fundamental aspect, the project will enhance research and discovery in the technologically important field of GaN-based nanowire systems. The research will provide students (graduate, undergraduate and high school students) with interdisciplinary educational experience through an ongoing nanotechnology course, a newly proposed laboratory-based nanotechnology course and also through additional laboratory facilities. The project will contribute to the professional development of students through publications in refereed journals and conference presentations.

本研究的目的是开发外延GaN和相关合金基纳米线，并研究其纳米电子器件应用的磁性，光学和电学特性。该方法将利用受控的催化剂沉积，然后是化学气相沉积方法。智力优势：这项新技术包括控制沉积小尺寸的Ni催化剂纳米颗粒，然后进行化学气相沉积，从而在衬底上生产GaN外延纳米线网络。这种新型GaN纳米线的晶体结构是立方锌型，比通常生长的纤锌矿GaN在技术上更重要。本项目将优化这种外延GaN纳米线网络和相关合金的生长过程;将通过磁化和磁力显微镜研究GaMnN纳米线的磁性;将研究光致发光、拉曼光谱等光学性质;将研究FET特性和LED特性等电学性质。纳米线的外延配置非常适合器件制造-该技术具有高产量，易于扩展到晶圆尺寸，并与先进的微米和纳米工程工艺兼容。该技术允许对结构、光学和输运性质进行完全控制和灵活调整。从基本方面来看，该项目将加强GaN基纳米线系统这一重要技术领域的研究和发现。该研究将通过正在进行的纳米技术课程，新提出的基于实验室的纳米技术课程以及额外的实验室设施为学生（研究生，本科生和高中生）提供跨学科的教育经验。该项目将有助于学生的专业发展，通过出版物在评审期刊和会议演示文稿。