GaN and Related Nitride Nanowires for Nanoscale Device Applications

本研究的目的是发展外延GaN及相关合金基纳米线，并研究其在纳米电子器件应用中的磁性、光学和电学性质。该方法将利用受控的催化剂沉积，然后是化学气相沉积方法。智能优点：这项新技术包括控制沉积小尺寸的镍催化剂纳米颗粒，然后进行化学气相沉积，从而在衬底上产生GaN外延纳米线网络。这种新型的GaN纳米线的晶体结构是立方闪锌矿类型的，在技术上比通常生长的纤锌矿GaN更重要。该项目将优化这种GaN纳米线网络和相关合金的生长工艺；将通过磁化和磁力显微镜来研究GaMnN纳米线的磁性；将研究光致发光、拉曼光谱等光学性质；将研究电学性质：场效应管特性和LED特性。广泛的影响：纳米线的外延结构非常适合器件制造-该技术高通量，易于扩展到晶片尺寸，并与先进的微和纳米工程工艺兼容。该技术允许完全控制和灵活地定制结构、光学和传输特性。从根本上说，该项目将加强在具有重要技术意义的GaN基纳米线系统领域的研究和发现。这项研究将通过正在进行的纳米技术课程、新提出的以实验室为基础的纳米技术课程以及额外的实验室设施，为学生(研究生、本科生和高中生)提供跨学科的教育经验。该项目将通过在参考期刊和会议报告上发表文章来促进学生的专业发展。

The objective of this research is to develop epitaxial GaN and related alloy based nanowires and investigate their magnetic, optical and electrical properties for nanoelectronic device applications. The approach will utilize a controlled catalyst deposition followed by chemical vapor deposition methods. Intellectual Merit: The new technology involves controlled deposition of Ni catalyst nanoparticles with small dimensions followed by chemical vapor deposition leading to the production of GaN epitaxial nanowire networks on the substrate. The crystal structure of the new kind of GaN nanowires is of the cubic zinc blende type, technologically more significant than typically grown wurtzite GaN. Growth procedure for such epitaxial GaN nanowire networks and the related alloys will be optimized in this project; magnetic properties of GaMnN nanowires will be studied by means of magnetization and magnetic force microscopy; optical properties such as photoluminescence, Raman spectra will be investigated; electrical properties: FET characteristics and LED characteristics will be investigated.Broad Impact: The epitaxial configuration of the nanowires is perfectly suited for device fabrication - the technology is high-throughput, easily scalable to wafer-sizes and compatible with advanced micro and nanoengineering processes. The technique allows for complete control and flexibility over tailoring the structure, optical and transport properties. From a fundamental aspect, the project will enhance research and discovery in the technologically important field of GaN-based nanowire systems. The research will provide students (graduate, undergraduate and high school students) with interdisciplinary educational experience through an ongoing nanotechnology course, a newly proposed laboratory-based nanotechnology course and also through additional laboratory facilities. The project will contribute to the professional development of students through publications in refereed journals and conference presentations.