SBIR Phase I: BeZnO UV Detector

SBIR 第一阶段：BeZnO 紫外检测器

• 批准号: 0943788
• 负责人: Yungryel Ryu
• 金额: $ 15万
• 依托单位: MOXtronics Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0943788&HistoricalAwards=false
• 关键词: SBIR; Phase; BeZnO; UV; Detector

This Small Business Innovation Research (SBIR) Phase I project will assess new designs for single-element solid state ultraviolet (UV) detectors based on BeZnO alloy material with cut-off wavelengths 300 to 370 nm, thereby eliminating undesired visible and infrared (IR) radiation. Photomultiplier tubes (PMTs) and silicon photodiodes can be used for selective UV detection in this region. PMTs are bulky and require high bias voltages (ca. 1000 V), and both PMTs and silicon possess a broad spectral response. System quantum efficiencies, near 30%, are reduced by filtering. Wide band gap BeZnO semiconductor materials can now be grown with optical cutoff wavelengths in the desired UV range. The research objectives are to develop a new class of high-sensitivity UV detectors featuring high-speed response, compactness, lightness, low operational voltage, low noise current, high quantum efficiency, high visible/IR rejection, and high radiation hardness. The crystallinity, electrical, and optical properties of BeZnO will be characterized and theoretical simulations performed to optimize layer sequences and doping profiles for metal-semiconductor-metal (MSM) UV detectors. Anticipated technical results are 300 to 370 nm cutoff wavelength, greater or equal than 5 orders of magnitude UV to Visible/IR responsivity, 60% QE, and 0.1 to 1 microsec response time. The broader impact/commercial potential of this project will be enhancement of scientific and technological understanding of the crystalline qualities of BeZnO semiconductor materials and how crystalline defects impact optical responsivity in the ultraviolet (UV) and in the visible and infrared (IR) spectral regions. Relating defect types and densities to optical response is of interest in photodetector development. Detection of UV in the presence of large visible/IR backgrounds has many commercial and military applications. Commercial applications include flame and heat sensors, medical sterilization monitoring, plasma diagnostics, Earth monitoring from look-down space platforms, sniper location by law enforcement, early stage sparking failure in high voltage transmission lines/transformers, and combustion engine monitoring. UV detectors can be used to determine if a flame is associated with a hot object, an important consideration in fire detection systems. Military applications include the detection of missile/gun plumes, missile guidance, base perimeter monitoring and detection of enemy combatants, and detection of biological/chemical agents for defense and homeland security. The technology can be further developed such that light-weight, high-resolution, and high-speed 1-D and 2-D imaging systems can be deployed. The technology area is semiconductor-based optical sensors, and the market sector is UV radiation monitoring.

该小型企业创新研究（SBIR）第一阶段项目将评估基于BeZnO合金材料的单元素固态紫外（UV）探测器的新设计，截止波长为300至370 nm，从而消除不需要的可见光和红外（IR）辐射。光电倍增管（PMT）和硅光电二极管可用于在该区域的选择性紫外检测。光电倍增管体积庞大，需要高偏置电压（约100 V）。1000 V），并且PMT和硅都具有宽光谱响应。系统量子效率，近30%，通过过滤降低。宽带隙BeZnO半导体材料现在可以生长具有所需UV范围内的光学截止波长。本研究的目标是开发一种新型的高灵敏度紫外探测器，具有快速响应，紧凑，轻便，低工作电压，低噪声电流，高量子效率，高可见光/红外抑制，高辐射硬度。的结晶度，电气和光学性能的BeZnO将进行表征和理论模拟，以优化层序列和掺杂的金属-半导体-金属（MSM）紫外探测器。预期的技术结果是300至370 nm的截止波长，大于或等于5个数量级的UV到可见光/IR响应度，60%QE，和0.1至1微秒的响应时间。该项目更广泛的影响/商业潜力将是提高对BeZnO半导体材料晶体质量的科学和技术理解，以及晶体缺陷如何影响紫外（UV）和可见光和红外（IR）光谱区域的光学响应度。将缺陷类型和密度与光学响应相关联是光电探测器开发中感兴趣的。在大的可见光/红外背景存在下检测UV具有许多商业和军事应用。商业应用包括火焰和热传感器、医疗灭菌监测、等离子体诊断、从俯视空间平台的地球监测、执法部门的狙击手定位、高压输电线路/变压器中的早期火花故障以及内燃机监测。UV探测器可用于确定火焰是否与热物体相关，这是火灾探测系统中的一个重要考虑因素。军事应用包括探测导弹/火炮羽流、导弹制导、基地周边监测和敌方战斗人员探测，以及用于国防和国土安全的生物/化学制剂探测。该技术可以进一步发展，以便可以部署重量轻，高分辨率和高速的1-D和2-D成像系统。技术领域是基于半导体的光学传感器，市场领域是紫外线辐射监测。