SBIR Phase I: Development of UV-B SLED and LD

SBIR 第一阶段：UV-B SLED 和 LD 的开发

• 批准号: 0945304
• 负责人: Max Shatalov
• 金额: $ 15万
• 依托单位: Sensor Electronic Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0945304&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; UV; SLED

This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral range (280 nm to 320 nm). A variety of optical sensing applications that require high power density with a highly localized spatial emission will benefit from the edge emitting device design.Development of novel UV-B emitting III-nitride devices will enable broad expansion of semiconductor DUV sources in medical diagnostics and treatment, fluorescence sensing and curing market sectors. This innovative technology is positioned to create new applications in the U.S. manufacturing sector that were previously unattainable for UV lamps and gas lasers. These DUV SLEDs can reduce or eliminate the use of mercury based UV technology for a variety of applications.

该小型企业创新研究第一阶段项目将开发创新的边缘发射超辐射发光二极管（SLED）和激光二极管（LD），发射波长在UV-B光谱范围（280 nm至320 nm）。 各种需要高功率密度和高度局部化空间发射的光学传感应用将受益于边缘发射器件设计。新型UV-B发射III族氮化物器件的开发将使半导体DUV源在医疗诊断和治疗、荧光传感和固化市场领域得到广泛扩展。这项创新技术将在美国制造业中创造新的应用，这是以前紫外线灯和气体激光器无法实现的。这些深紫外SLED可以减少或消除汞基紫外线技术在各种应用中的使用。