SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

SBIR 第二阶段：采用数字掺杂控制的具有高质量 p-AlInGaN 层的深紫外 LED

• 批准号: 0956746
• 负责人: Max Shatalov
• 金额: $ 49.98万
• 依托单位: Sensor Electronic Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-15 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0956746&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Deep; UV

This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlInGaN layers via migration-enhanced metal-organic chemical vapor deposition (MEMOCVD). DUV LEDs operating in the spectral region from 240 nm to 365 nm are of great importance for medical, bio-analytical, sensing, and homeland security technologies. This project aims to improve the LED efficiency and lifetime by improvements in the material quality, doping, and device design. These enhancements will lay the groundwork for large-scale penetration of high volume markets, such as global sanitation and disinfection. This Phase II project will achieve efficient multiple pass extraction in transparent epitaxial structures through use of high-quality MEMOCVD doped p-AlInGaN top contact layers. Achieving an improved quality of highly doped p-AlInGaN layers will allow creation of a low-cost, high power semiconductor DUV radiation source with wall plug efficiency exceeding 5% and operation lifetimes longer than 5,000 hours. The broader impact/commercial potential of this project will originate from the market penetration of DUV LEDs into existing markets that require compact and environmentally friendly UV radiation sources. This project will also allow penetration into new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. The primary markets for these devices include bio-medical and analytical instrumentation, fluorescence sensing, ink curing, phototherapy and water/air disinfection. This new technology for manufacturing high-efficiency and long-lifetime DUV devices will allow these semiconductor light sources to have a price point which is competitive with the mature UV lamp technology. This will allow the increased use of an environmentally friendly, mercury-free UV technology for a variety of applications, which will result in a reduction of toxic waste and in the costs associated with mercury lamp disposal. The purification, sterilization, and early warning applications enabled by these new DUV LED sources will also result in an improved quality of life, particularly in the developing world.

该小型企业创新研究第二阶段项目将开发和商业化下一代高功率深紫外发光二极管（DUV LED），通过迁移增强金属有机化学气相沉积（MEMOCVD）实现高质量p型掺杂AlInGaN层。 在240 nm至365 nm光谱范围内工作的DUV LED对于医疗、生物分析、传感和国土安全技术非常重要。 该项目旨在通过改进材料质量、掺杂和器件设计来提高LED效率和寿命。 这些改进将为大规模渗透全球卫生和消毒等大规模市场奠定基础。 该第二阶段项目将通过使用高质量的MEMOCVD掺杂的p-AlInGaN顶部接触层，在透明外延结构中实现高效的多通道提取。 实现高掺杂p-AlInGaN层的质量改善将允许创建低成本、高功率半导体DUV辐射源，其具有超过5%的壁插效率和超过5，000小时的工作寿命。该项目更广泛的影响/商业潜力将来自DUV LED对需要紧凑和环保的UV辐射源的现有市场的市场渗透。 该项目还将允许渗透到以前由于现有紫外线灯或激光器的固有限制而无法实现的新应用中。 这些设备的主要市场包括生物医学和分析仪器、荧光传感、油墨固化、光疗和水/空气消毒。 这种用于制造高效率和长寿命DUV器件的新技术将使这些半导体光源具有与成熟的UV灯技术竞争的价格点。 这将使环保型无汞紫外线技术在各种应用中得到更多的使用，从而减少有毒废物和与汞灯处置相关的成本。 这些新的深紫外LED光源所实现的净化、消毒和预警应用也将提高生活质量，特别是在发展中国家。