EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel Junctions Suitable for Spin Torque Transfer Magnetic Random Access Memory

点击翻译按钮获取中文摘要

ECCS/PCAN/EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel JunctionsSuitable for Spin Torque Transfer Magnetic Random Access MemoryPrinciple investigator: Stuart A. Wolf, University of VirginiaProject Summary:This project is focused on the development of novel tunnel barriers and electrodes formagnetic tunnel junctions that will be utilized in a new type of magnetic memory calledSpin Torque Transfer Random Access Memory or STT-RAM. Although there is aworldwide rush to develop this new memory technology, there are some fundamentalchallenges that need to be overcome. In particular, finding materials that allow thejunction to be switched with low currents and also have very long term thermal stability.The goal of this EAGER proposal is to very quickly demonstrate novel solutions to thesechallenges and provide a rapid path to accelerate the development of this technology justas the novel toggle switching did for the more conventional Magnetic Random AccessMemory or MRAM that has been recently commercialized. A very unique approach isdesigned to solve this problem based on developing novel oxides that have exemplaryproperties that will enable tunnel junctions utilizing these materials to satisfy therequirements of very low power switching and excellent thermal stability (10 yearretention of data). In this project the exploration has three paths that could produce arobust and scalable STT-RAM: (1) new tunnel barriers; (2) better ferromagneticelectrodes; (3) new material with perpendicular magnetization.Intellectual Merit:This proposal addresses the development of novel oxide and other materials andstructures that are highly complex and show strong electronic correlations and emergentbehavior. Understanding these materials and their emergent behavior has a clearintellectual payoff beyond just revolutionizing the STT-RAM state of the art.Furthermore, these materials are being prepared using new deposition methods: BiasedTarget Reactive Ion Beam Deposition and Pulsed Electron Beam Deposition that provideunprecedented control of the growth of highly ordered and smooth ultra thin films. Thedemonstration of the development of these films using these unique tools that enablerapid exploration of broad composition space and evaluation of novel properties providessolutions to a set of important research and technological challenges. This project has ahigh degree of Intellectual Merit and will provide a series of interesting publications inaddition to translational technological solutions.Broader Impacts:If successful, the results of this project will be immediately incorporated into this newgeneration of random access, non-volatile memory which can, in principle be a Universalmemory that replaces SRAM, DRAM and FLASH. UVa?s participation with theSemiconductor Industry both the large companies as well as a major startup companyalmost guarantees that any breakthroughs will be quickly adopted. The solid statememory industry has a market of over $100 Billion.