EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel Junctions Suitable for Spin Torque Transfer Magnetic Random Access Memory

ECCS/PCAN/EIGER：用于先进磁隧道结的新型隧道势垒和电极适用于自旋扭矩转移磁随机存取存储器原理研究员：弗吉尼亚大学Stuart A.Wolf项目摘要：该项目致力于开发形成磁隧道结的新型隧道势垒和电极，将用于一种称为自旋扭矩转移随机存取存储器或STT-RAM的新型磁存储器。尽管全世界都在争先恐后地开发这种新的存储技术，但仍有一些根本性的挑战需要克服。特别是，寻找能够以低电流开关结并且具有非常长期的热稳定性的材料。这项急切的提议的目标是非常迅速地展示针对这些挑战的新解决方案，并提供一条快速途径来加速这项技术的发展，就像最近商业化的更传统的磁随机存储器或MRAM所做的那样。设计了一种非常独特的方法来解决这一问题，其基础是开发具有典范性质的新型氧化物，使利用这些材料的隧道结能够满足非常低的功率开关和良好的热稳定性(数据保留10年)的要求。在这个项目中，探索有三条途径可以制造出难处理和可扩展的STT-RAM：(1)新的隧道势垒；(2)更好的铁磁电极；(3)具有垂直磁化的新材料。智能优点：这项提议解决了新型氧化物和其他高度复杂的材料和结构的开发，这些材料和结构表现出强烈的电子相关性和紧急行为。了解这些材料及其出现的行为具有明显的智力回报，不仅仅是彻底改变了STT-RAM技术的现状。此外，正在使用新的沉积方法来制备这些材料：偏置目标反应离子束沉积和脉冲电子束沉积，它们提供了前所未有的对高度有序和光滑的超薄膜生长的控制。使用这些独特的工具快速探索广阔的合成空间和评估新奇性能的这些薄膜的开发演示，为一系列重要的研究和技术挑战提供了解决方案。该项目具有很高的智力价值，除了翻译技术解决方案外，还将提供一系列有趣的出版物。广泛影响：如果成功，该项目的结果将立即纳入新一代随机存取、非易失性存储器，原则上可以成为取代SRAM、DRAM和闪存的通用存储器。S加入了半导体行业，既有大公司，也有大型初创公司，几乎可以保证任何突破都会很快被采纳。坚实的国家记忆体行业拥有超过1000亿美元的市场。

ECCS/PCAN/EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel JunctionsSuitable for Spin Torque Transfer Magnetic Random Access MemoryPrinciple investigator: Stuart A. Wolf, University of VirginiaProject Summary:This project is focused on the development of novel tunnel barriers and electrodes formagnetic tunnel junctions that will be utilized in a new type of magnetic memory calledSpin Torque Transfer Random Access Memory or STT-RAM. Although there is aworldwide rush to develop this new memory technology, there are some fundamentalchallenges that need to be overcome. In particular, finding materials that allow thejunction to be switched with low currents and also have very long term thermal stability.The goal of this EAGER proposal is to very quickly demonstrate novel solutions to thesechallenges and provide a rapid path to accelerate the development of this technology justas the novel toggle switching did for the more conventional Magnetic Random AccessMemory or MRAM that has been recently commercialized. A very unique approach isdesigned to solve this problem based on developing novel oxides that have exemplaryproperties that will enable tunnel junctions utilizing these materials to satisfy therequirements of very low power switching and excellent thermal stability (10 yearretention of data). In this project the exploration has three paths that could produce arobust and scalable STT-RAM: (1) new tunnel barriers; (2) better ferromagneticelectrodes; (3) new material with perpendicular magnetization.Intellectual Merit:This proposal addresses the development of novel oxide and other materials andstructures that are highly complex and show strong electronic correlations and emergentbehavior. Understanding these materials and their emergent behavior has a clearintellectual payoff beyond just revolutionizing the STT-RAM state of the art.Furthermore, these materials are being prepared using new deposition methods: BiasedTarget Reactive Ion Beam Deposition and Pulsed Electron Beam Deposition that provideunprecedented control of the growth of highly ordered and smooth ultra thin films. Thedemonstration of the development of these films using these unique tools that enablerapid exploration of broad composition space and evaluation of novel properties providessolutions to a set of important research and technological challenges. This project has ahigh degree of Intellectual Merit and will provide a series of interesting publications inaddition to translational technological solutions.Broader Impacts:If successful, the results of this project will be immediately incorporated into this newgeneration of random access, non-volatile memory which can, in principle be a Universalmemory that replaces SRAM, DRAM and FLASH. UVa?s participation with theSemiconductor Industry both the large companies as well as a major startup companyalmost guarantees that any breakthroughs will be quickly adopted. The solid statememory industry has a market of over $100 Billion.