A novel current injection in wide bandgap semiconductors with tunnel junctions

本研究的目的是在宽禁带半导体，特别是氮化物半导体中开发一种新型的电流注入，氮化物半导体是从红外到深紫外光范围内发光和探测器件的最高材料。这种宽带隙材料表现出高阻性的p层，导致紫外光发射器件的性能较差。在这项研究中，已经获得了非常低的电阻隧道结。通过隧道结将高阻p层替换为低阻n层，从而产生了新型发光和检测器件。高含量GaInN隧道结的电阻比以前降低了一个数量级。电流受限微发光二极管、微显示器和串联太阳能电池已经用隧道结开发出来。建立了一种新颖的隧道结电流注入方式。

The objective of this research is to develop a novel current injection in wide bandgap semiconductors, especially nitride semiconductors which are supreme materials for light emitting and detecting devices covering the ranges from infrared to deep ultraviolet. Such wide bandgap materials show highly resistive p-layers, resulting in poor characteristics of ultraviolet light emitting devices. In the research very low resistive tunnel junctions have been obtained. The highly resistive p-layers are replaced with the low resistive n-layers by the tunnel junctions, leading to novel light emitting and detecting devices. High In content GaInN tunnel junctions show one order of magnitude lower resistances than before. Current confinement micro light emitting diodes, micro displays and tandem solar cells have been developed with the tunnel junctions. The novel current injection with tunnel junctions has been established.