A novel current injection in wide bandgap semiconductors with tunnel junctions

本研究的目的是在宽带隙半导体，特别是氮化物半导体中开发一种新的电流注入，氮化物半导体是覆盖从红外到深紫外范围的发光和检测器件的最佳材料。这种宽带隙材料显示出高电阻p层，导致紫外光发射器件的特性差。在研究中，已经获得了非常低电阻的隧道结。高电阻的p-层被隧道结的低电阻的n-层所取代，从而产生新颖的发光和检测器件。高In含量的GaInN隧道结显示出比以前低一个数量级的电阻。利用隧道结已经开发出了电流限制型微型发光二极管、微型显示器和串联太阳能电池。建立了一种新颖的隧道结电流注入方法。

The objective of this research is to develop a novel current injection in wide bandgap semiconductors, especially nitride semiconductors which are supreme materials for light emitting and detecting devices covering the ranges from infrared to deep ultraviolet. Such wide bandgap materials show highly resistive p-layers, resulting in poor characteristics of ultraviolet light emitting devices. In the research very low resistive tunnel junctions have been obtained. The highly resistive p-layers are replaced with the low resistive n-layers by the tunnel junctions, leading to novel light emitting and detecting devices. High In content GaInN tunnel junctions show one order of magnitude lower resistances than before. Current confinement micro light emitting diodes, micro displays and tandem solar cells have been developed with the tunnel junctions. The novel current injection with tunnel junctions has been established.