A novel current injection in wide bandgap semiconductors with tunnel junctions

本研究的目的是在宽禁带半导体中开发一种新的电流注入，特别是氮化半导体，它是从红外到深紫外范围内发光和探测器件的最佳材料。这种宽禁带材料具有高阻p层，导致紫外发光器件的特性较差。在研究中获得了极低电阻的隧道结。通过隧道结，高阻p层被低阻n层所取代，从而产生了新型的发光和探测器件。高In含量的GaInN隧道结的电阻比以前降低了一个数量级。电流约束微型发光二极管、微型显示器和串联太阳能电池都是利用隧道结发展起来的。建立了具有隧道结的新型注入电流。

The objective of this research is to develop a novel current injection in wide bandgap semiconductors, especially nitride semiconductors which are supreme materials for light emitting and detecting devices covering the ranges from infrared to deep ultraviolet. Such wide bandgap materials show highly resistive p-layers, resulting in poor characteristics of ultraviolet light emitting devices. In the research very low resistive tunnel junctions have been obtained. The highly resistive p-layers are replaced with the low resistive n-layers by the tunnel junctions, leading to novel light emitting and detecting devices. High In content GaInN tunnel junctions show one order of magnitude lower resistances than before. Current confinement micro light emitting diodes, micro displays and tandem solar cells have been developed with the tunnel junctions. The novel current injection with tunnel junctions has been established.