Collaborative Research: MOSFETs with atomically engineered metal/high-k interfaces

合作研究：具有原子工程金属/高 k 接口的 MOSFET

• 批准号: 1002301
• 负责人: Ramamurthy Ramprasad
• 金额: $ 18万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-15 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1002301&HistoricalAwards=false
• 关键词: Collaborative; Research; MOSFETs; atomically; engineered

Field-effect Transistors with Atomically Engineered Metal/High-k Interfaces PIs: Ramprasad (U Conn, CT) and Ramanath (RPI, NY)The objective of this research is the atomic-level design of interfaces between metals and high dielectric constant insulators (high-k), with control over the metal effective work function. The approach involves the rational placement of atomic or molecular nanolayers at the interface. Density functional theory computations, synthesis strategies pioneered by us, device fabrication and characterization, will be employed to study the effects of the nanolayers on the electronic structure, bonding, and stability of metal/high-k interfaces.Intellectual Merit: For almost four decades, electronic devices have comprised of doped-polysilicon electrode/silica stacks. The inadequacy of this architecture for next-generation devices has made the development of metal electrode/high-k stacks inevitable. A critical roadblock in the latter approach is the unavailability of a clear pathway and knowledgebase for creating metal electrodes with tunable work function. This challenge will be addressed by identifying the influence of the physical and chemical features of interfacial nanolayers on the effective metal work function. Interfacial molecular nanolayers provide a completely new transformative pathway to tailor interface electronic properties and stability. Broader Impact: This project will provide a unique opportunity for cross-disciplinary training of two graduate students working on computations and experiments at University of Connecticut and Rensselaer, respectively. Integration of this research in device and materials courses at the two universities, and the computation-experiment synergy on a topic straddling nanoscience and electrical engineering will enrich the students. Site-visits for K-12 students, and a summer internship for a high-school teacher to increase their awareness on emerging nanoelectronic device architectures will be organized.

具有原子工程金属/高k界面的场效应晶体管PI：Ramprasad（U Conn，CT）和Ramanath（RPI，NY）本研究的目标是金属和高介电常数绝缘体（高k）之间界面的原子级设计，控制金属有效功函数。该方法涉及在界面处合理放置原子或分子纳米层。密度泛函理论计算、我们开创的合成策略、器件制造和表征将用于研究纳米层对金属/高k界面的电子结构、键合和稳定性的影响。知识成果：近四十年来，电子器件由掺杂多晶硅电极/二氧化硅堆叠组成。这种架构对于下一代器件的不足使得金属电极/高k堆叠的发展不可避免。后一种方法中的关键障碍是用于创建具有可调功函数的金属电极的明确途径和知识库的不可用。这一挑战将通过确定界面纳米层的物理和化学特征对有效金属功函数的影响来解决。界面分子纳米层提供了一个全新的变革途径，以定制界面的电子性质和稳定性。更广泛的影响：该项目将为两名分别在康涅狄格大学和伦斯勒大学从事计算和实验的研究生提供一个独特的跨学科培训机会。在两所大学的设备和材料课程中整合这项研究，以及跨纳米科学和电气工程主题的计算-实验协同作用将丰富学生。将组织K-12学生的现场访问和高中教师的暑期实习，以提高他们对新兴纳米电子器件架构的认识。