Electron Spin Effects in Semiconductor Nanostructure: Magnetism and Topology

半导体纳米结构中的电子自旋效应：磁性和拓扑

• 批准号: 1905277
• 负责人: Badih Assaf
• 金额: $ 59万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-12-01 至 2023-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1905277&HistoricalAwards=false
• 关键词: Electron; Spin; Effects; Semiconductor; Nanostructure

Non Technical Abstract:This project involves investigating the connection between the science of magnetism and topology, which has recently become a major research frontier of semiconductor physics as well as quantum mechanics. The design and synthesis of quantum materials exhibiting this connection is, however, a major challenge. The specific goal of this project is therefore to design and synthesize new resilient materials in which this connection can be studied, and to achieve transformative discoveries using those materials. Those discoveries could result in new science and technology of interest in the emerging field of quantum computing. The project will use molecular beam epitaxy, which is a tool by which materials can be constructed atom-by-atom. This allows the design of materials with new functionalities that can be utilized in contemporary and emerging technologies. This research team will synthesize high-quality semiconductor materials with controllable magnetic properties. Another part of the project will include investigating the properties of semiconductor materials which have been stacked in periodic structures. The coupling between the different layers could lead to completely different functionalities not possible from either material separately. The project could potentially provide important solutions to next-generation devices for quantum computing and data storage devices that consume very low energy. This project will also train students by providing them with a skill set necessary to supply the nation's workforce to support and advance new technologies of quantum computing and data storage.Technical Abstract: The project involves the interplay between magnetism and topology in semiconductors, a combination of disciplines that has already delivered exciting discoveries which directly impact quantum and spintronic device physics. The specific goals of this project are to utilize tuning knobs, such as strain, heterostructuring and metastable phase synthesis, made possible by precision molecular beam epitaxy, aimed at developing robust spintronic topological phases. The proposed goals are reached by tackling two objectives. The first objective aims to harness perpendicular magnetic anisotropy in two-dimensional III-Mn-V interfaces to achieve a temperature-resilient quantum anomalous Hall effect. The second objective aims to engineer new emergent quantum phases of matter in magnetic topological superlattices consisting of stacks of topological and normal insulators, one of which is magnetic. By combining complementary expertise in material development, optical probes, and electronic characterization tools, the team has the ability to achieve major breakthroughs toward advancing current understanding of magnetic topological phases and toward strengthening their resilience to environmental perturbations. The project synergizes those research objectives with a strong educational component that includes direct training by research on a variety of tools relevant to semiconductor and quantum technologies, and launching a course focused on topological phases in condensed matter physics.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要：该项目涉及研究磁性科学和拓扑学之间的联系，最近已成为半导体物理学和量子力学的主要研究前沿。然而，展示这种联系的量子材料的设计和合成是一个重大挑战。因此，该项目的具体目标是设计和合成可以研究这种联系的新弹性材料，并使用这些材料实现变革性发现。这些发现可能会在新兴的量子计算领域产生令人感兴趣的新科学和技术。该项目将使用分子束外延，这是一种可以逐个原子构建材料的工具。这允许设计具有新功能的材料，可用于当代和新兴技术。该研究团队将合成具有可控磁性的高质量半导体材料。该项目的另一部分将包括研究以周期性结构堆叠的半导体材料的特性。不同层之间的耦合可能会导致两种材料单独使用时不可能产生完全不同的功能。 该项目有可能为下一代量子计算设备和能耗非常低的数据存储设备提供重要的解决方案。该项目还将通过为学生提供必要的技能来培养国家的劳动力，以支持和推进量子计算和数据存储的新技术。技术摘要：该项目涉及半导体中磁性和拓扑结构之间的相互作用，这是一个学科的组合，已经提供了直接影响量子和自旋电子器件物理的令人兴奋的发现。该项目的具体目标是利用调谐旋钮，如应变，异质结和亚稳相合成，通过精密分子束外延，旨在开发强大的自旋电子拓扑相。通过解决两个目标来实现拟议目标。第一个目标旨在利用二维III-Mn-V界面中的垂直磁各向异性来实现温度弹性量子反常霍尔效应。第二个目标是在由拓扑绝缘体和正常绝缘体组成的磁性拓扑超晶格中设计新的涌现量子相，其中一个是磁性的。通过结合材料开发，光学探针和电子表征工具的互补专业知识，该团队有能力实现重大突破，以推进当前对磁性拓扑相的理解，并加强其对环境扰动的适应能力。该项目将这些研究目标与强大的教育部分结合起来，包括通过研究与半导体和量子技术相关的各种工具进行直接培训，并推出一门专注于凝聚态物理学拓扑阶段的课程。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Weak antilocalization beyond the fully diffusive regime in Pb1−xSnxSe topological quantum wells

• DOI: 10.1103/physrevb.102.155307
• 发表时间: 2020-10
• 期刊: arXiv: Mesoscale and Nanoscale Physics
• 作者: Jiashu Wang;X. Liu;C. Bunker;L. Riney;B. Qing;S. Bac;M. Zhukovskyi;T. Orlova;Sergei Rouvimov;M. Dobrowolska;J. Furdyna;B. Assaf

Magnetic properties and electronic origin of the interface between dilute magnetic semiconductors with orthogonal magnetic anisotropy

正交磁各向异性稀磁半导体界面的磁性和电子起源

• DOI: 10.1103/physrevmaterials.4.054410
• 发表时间: 2020
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Need, Ryan F.;Bac, Seul-Ki;Liu, Xinyu;Lee, Sanghoon;Kirby, Brian J.;Dobrowolska, Margaret;Kossut, Jacek;Furdyna, Jacek K.
• 通讯作者: Furdyna, Jacek K.

Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy

• DOI: 10.1063/5.0079245
• 发表时间: 2022-04
• 期刊: APL Materials
• 影响因子: 6.1
• 作者: Phunvira Chongthanaphisut;Kyung Jae Lee;Sanghoon Lee;X. Liu;M. Dobrowolska;J. Furdyna

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

• DOI: 10.1063/5.0075827
• 发表时间: 2021-06
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Ying Wang;Xinyu Liu;S. Bac;Jiashu Wang;J. Furdyna;B. Assaf;M. Zhukovskyi;T. Orlova;V. Lauter;N. Dilley;L. Rokhinson

Magnetic anisotropy of ferromagnetic Ga1−xMnxAs1−yPy films with graded composition

• DOI: 10.1103/physrevmaterials.5.054414
• 发表时间: 2021-05
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: S. Bac;Sanghoon Lee;Xinyu Liu;M. Dobrowolska;B. Assaf;J. Furdyna