SBIR Phase I: High-Temperature, Low-Noise Nanotransistors

SBIR 第一阶段：高温、低噪声纳米晶体管

• 批准号: 1013989
• 负责人: Dean Tsang
• 金额: $ 14.97万
• 依托单位: Xeresearch Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2011-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1013989&HistoricalAwards=false
• 关键词: SBIR; Phase; Temperature; Low; Noise

This Small Business Innovation Research Phase I project will demonstrate the feasibility of nanolayer transistors composed of a new channel material for high temperature and low noise applications. The new nanolayer transistors are expected to have significantly better performance in an operating temperature range of 300 to 400 degrees C, as well as low noise and high gain relative to currently available transistors. Currently, electronics cannot operate at 300 degree C or higher, temperatures encountered in oil drilling, aerospace, automotive, and other hot noisy environments. This project will use standard semiconductor processing equipment to fabricate a device structure that consists of nanolayers of material grown controllably by atomic layer deposition. Device feasibility will be shown through current modulation with applied gate voltage. Attempts will also be made to investigate transistor I-V characteristics and their temperature dependence on probed devices. A successful device demonstration may be an impetus to additional studies on the effects of an electric field in these ultrathin materials, including better theoretical treatments, materials characterization, novel materials, and impurity trap measurements.The broader/commercial impact of this project, if successful, can be large to the economy and society. Availability of high temperature and lower noise electronics can lead to better monitoring and control of environments like oil drilling, jet and automobile engines, and high temperature industrial processes. Devices with better noise performance can reduce cell phone dropouts and extend cell range. The market for electronics for currently unserved sensor opportunities can grow to $100M as volume applications are addressed.

这个小企业创新研究第一阶段项目将展示由一种新的通道材料组成的纳米层晶体管的可行性，用于高温和低噪声应用。新的纳米层晶体管预计在300至400摄氏度的工作温度范围内具有显着更好的性能，并且相对于现有的晶体管具有低噪声和高增益。目前，电子设备不能在300摄氏度或更高的温度下工作，石油钻井、航空航天、汽车和其他热噪声环境中都会遇到这种温度。该项目将使用标准的半导体加工设备来制造由原子层沉积控制生长的纳米层材料组成的器件结构。器件的可行性将通过外加栅极电压的电流调制来证明。还将尝试研究晶体管的I-V特性及其对探测器件的温度依赖性。一个成功的装置演示可能会推动对电场在这些超薄材料中的影响的进一步研究，包括更好的理论处理、材料表征、新材料和杂质陷阱测量。这个项目如果成功，将会对经济和社会产生巨大的影响。高温和低噪音电子设备的可用性可以更好地监测和控制环境，如石油钻井，喷气机和汽车发动机，以及高温工业过程。具有较好噪声性能的设备可以减少手机掉线和扩展手机范围。随着批量应用的解决，目前未提供服务的传感器的电子市场机会可能增长到1亿美元。