Sensing Mechanism and Persistence of Semiconductor Gas Sensors on Nanostructured Surfaces
Sensing Mechanism and Persistence of Semiconductor Gas Sensors on Nanostructured Surfaces
批准号:
1031111
负责人:
Mengyan Shen
金额:
$27.54万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-09-01 至 2015-08-31
中文摘要
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英文摘要
Abstract1031111Mengyan ShenUniversity of Massachusetts, LowellThe objective of this project is to obtain a fundamental understanding of the sensing mechanism, persistence, and reliability of semiconductor oxide gas sensors on substrates formed through femtosecond laser nanostructuring combined with soft nanolithography. At room temperature, these recently discovered structures exhibit a higher sensitivity than conventional semiconductor gas sensors operating at 450°C. This eliminates problems such as high energy consumption, rapid degradation, and poor reliability. Since the low-temperature sensing mechanism cannot be ascribed solely to the high surface-to-bulk ratio of the substrates, the molecular-level function of these sensors will be studied through a physics-based predictive model. Successful outcomes from this research are expected to (a) contribute to the areas of gas sensing and nanoscience and technology; and (b) enhance our knowledge of applications of bionics in enhancing the functions of detectors. The proposed research will lead to energy-saving and cost-effective sensors with a positive impact on the environment, which benefits consumers and society as a whole.Educational and outreach programs based on this research will broaden the participation of women and other underrepresented groups in science and technology, and train future multidisciplinary scientists and engineers.
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