BRIGE: High-Performance Printable Oxides for Flexible Electronics (HiPPO)

BRIGE:用于柔性电子产品的高性能可印刷氧化物(HiPPO)

基本信息

项目摘要

Intellectual Merit: Transparent amorphous oxide semiconductors based on amorphous and poly-silicon are an attractive alternative to existing transistor technologies to enable future applications of high-performance, flexible and large-area electronics. Solution-based processes are also needed for ink-jet printable electronics. This BRIGE project will study solution-processed ternary amorphous metal oxide thin films such as zinc tin oxide and zinc gallium oxide using a novel molecular precursor approach. The research seeks to establish the feasibility of using these precursors to fabricate the active layer of thin film transistors and to develop alternate energetic sources to lower the required temperature for high-quality film formation, opening the door to future solution processing of a variety of electronic, optoelectronic and magnetic thin films. The semiconductor physics of these films, such as the nature of defects and donors as well as electronic charge transport, will be explored. Finally, this project seeks to demonstrate the films' potential for future applications in a wide range of demanding circuit applications.Broader Impacts: The proposed technical work on printable, flexible electronics has the potential to significantly impact technologies for consumer, industrial, and military mobile applications where durability, low weight and low-cost are key design criteria. The project will have broad impact in education and training by involving both undergraduate and graduate researchers in collaborative research alongside the PI. The students will obtain significant experience in fabrication and characterization techniques relevant to micro- and nano-fabrication of electronic materials and devices, and will seek to share their knowledge with the broader community, including school-age students, via outreach programs. Participation in engineering research will be broadened through recruiting, training, mentoring, and outreach to under-represented and disabled students at all levels.
知识优势:基于非晶和多晶硅的透明非晶氧化物半导体是现有晶体管技术的一个有吸引力的替代品,可以实现高性能,柔性和大面积电子产品的未来应用。喷墨印刷电子产品也需要基于解决方案的工艺。这个bridge项目将使用一种新的分子前驱体方法研究溶液处理的三元非晶金属氧化物薄膜,如锌锡氧化物和锌镓氧化物。该研究旨在确定使用这些前驱体制造薄膜晶体管有源层的可行性,并开发替代能量源,以降低形成高质量薄膜所需的温度,为未来各种电子、光电和磁性薄膜的溶液加工打开大门。这些薄膜的半导体物理,如缺陷和供体的性质以及电子电荷输运,将被探索。最后,该项目旨在展示该薄膜在未来广泛应用于要求苛刻的电路应用中的潜力。更广泛的影响:拟议的可打印、柔性电子技术工作有可能对消费者、工业和军事移动应用技术产生重大影响,其中耐用性、低重量和低成本是关键的设计标准。该项目将在教育和培训方面产生广泛的影响,使本科生和研究生的研究人员与PI一起进行合作研究。学生将获得与电子材料和器件的微纳米制造相关的制造和表征技术的重要经验,并将通过外展计划寻求与更广泛的社区,包括学龄学生分享他们的知识。将通过招聘、培训、指导和向各级代表性不足和残疾学生伸出援手,扩大对工程研究的参与。

项目成果

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Rebecca Peterson其他文献

Antibiotic-Associated Eosinophilic and Occlusive Arteritis in Calves Complicating Preclinical Studies of Left Ventricular Assist Devices
小牛抗生素相关性嗜酸粒细胞性和闭塞性动脉炎使左心室辅助装置的临床前研究复杂化
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T. Cooper;J. Griffith;J. Reibson;Rebecca Peterson;Evan P. Roush;Qing Zhong;W. Weiss;G. Rosenberg
  • 通讯作者:
    G. Rosenberg
A cross-sectional and longitudinal examination of the development of innovation capability in undergraduate engineering students
工科本科生创新能力发展的横断面和纵向考察
  • DOI:
    10.1115/detc2015-47650
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    2.7
  • 作者:
    Trina C. Kershaw;Rebecca Peterson;Molly McCarthy;Paul T. Williams;Adam Young;Katja Hölttä;C. Seepersad;S. Bhowmick
  • 通讯作者:
    S. Bhowmick
A Quest for Relevance: Becoming a Community Place
寻求相关性:成为一个社区场所
  • DOI:
    10.1080/10598650.2020.1749801
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    0.6
  • 作者:
    Elgin Grey;Katie Kapczynski;Carlos Llanos;Diana Peña;Rebecca Peterson;L. Solomon;Wendy Wolf
  • 通讯作者:
    Wendy Wolf

Rebecca Peterson的其他文献

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{{ truncateString('Rebecca Peterson', 18)}}的其他基金

REU Site: Semiconductor Hands-On Research Experience (SHORE)
REU 网站:半导体实践研究体验 (SHORE)
  • 批准号:
    2244040
  • 财政年份:
    2023
  • 资助金额:
    $ 17.5万
  • 项目类别:
    Standard Grant
2020 Device Research Conference (DRC), To Be Held Virtually June 21-24, 2020.
2020 年器件研究会议 (DRC) 将于 2020 年 6 月 21 日至 24 日以虚拟方式举行。
  • 批准号:
    2035523
  • 财政年份:
    2020
  • 资助金额:
    $ 17.5万
  • 项目类别:
    Standard Grant
CAREER: Band Engineering in Amorphous Semiconductors
职业:非晶半导体能带工程
  • 批准号:
    1653433
  • 财政年份:
    2017
  • 资助金额:
    $ 17.5万
  • 项目类别:
    Continuing Grant

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