CAREER: Band Engineering in Amorphous Semiconductors

职业：非晶半导体能带工程

• 批准号: 1653433
• 负责人: Rebecca Peterson
• 金额: $ 40万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-06-01 至 2022-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1653433&HistoricalAwards=false
• 关键词: CAREER; Band; Engineering; Amorphous; Semiconductors

Non-Technical Description: At the core of today?s electronics are semiconductor materials. The optical energy at which a semiconductor strongly absorbs light is known as its bandgap. By mixing two different materials to form a semiconductor alloy, its bandgap can be tuned. The first goal of this project is to study the fundamental materials properties and bandgap tuning in alloys made of amorphous, or disordered, oxide semiconductors. These wide bandgap materials are less explored but very promising for applications of strong societal importance such as devices for renewable energy and health care. The second goal of this project is to bring together research and education by engaging the entire research team in outreach activities with the public, including school-age learners. In addition, the principal investigator provides mentoring to graduate and undergraduate students through research activities and ?Career Connections? events featuring discussions with practicing scientists and engineers.Technical Description: This project explores band engineering of amorphous oxide semiconductor thin films via quaternary and quinary alloying. These materials have a wide bandgap, similar to that of gallium nitride. Multi-component phase diagrams are used to relate oxide alloy composition to thermodynamic stability and materials properties. The specific objectives of this project are: (i) to investigate the alloy composition ranges and thermodynamic pathways available for meta-stable band-engineered amorphous alloy films; (ii) to characterize charge transport and sub-bandgap density of states as a function of alloy composition, using electrical and opto-electronic techniques; (iii) to develop models and experimentally validate hetero-structure interface formation in amorphous oxide alloys. Through these studies, this project significantly expands the present scientific understanding and application scope of disordered semiconductors. Heterostructures made using these band-engineered amorphous oxide alloys can be used in future high-power electronics or deep ultraviolet optoelectronics devices.

非技术描述：在今天的核心？电子材料是半导体材料。半导体强烈吸收光的光能称为其带隙。通过混合两种不同的材料形成半导体合金，可以调整其带隙。本计画的第一个目标是研究非晶或无序氧化物半导体合金的基本材料性质与能带调整。这些宽带隙材料较少探索，但对于具有强烈社会重要性的应用，如可再生能源和医疗保健设备，非常有前途。该项目的第二个目标是通过让整个研究团队参与与公众，包括学龄学生的外联活动，将研究和教育结合起来。此外，主要研究者提供指导，研究生和本科生通过研究活动和？职业联系？技术描述：本项目通过四元和五元合金化探索非晶氧化物半导体薄膜的能带工程。这些材料具有宽的带隙，类似于氮化镓。多组分相图用于将氧化物合金成分与热力学稳定性和材料性质联系起来。该项目的具体目标是：（i）研究亚稳态能带工程非晶合金薄膜的合金成分范围和热力学途径;（ii）使用电学和光电技术表征作为合金成分函数的电荷传输和亚带隙态密度;（iii）开发模型并通过实验验证非晶氧化物合金中异质结构界面的形成。通过这些研究，该项目大大扩展了目前对无序半导体的科学认识和应用范围。使用这些能带工程非晶氧化物合金制成的异质结构可用于未来的高功率电子器件或深紫外光电子器件。