CAREER: Local Probes of Electronic Disorder in Organic Semiconductors

职业:有机半导体电子紊乱的局部探索

基本信息

  • 批准号:
    1056861
  • 负责人:
  • 金额:
    $ 49.81万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2011
  • 资助国家:
    美国
  • 起止时间:
    2011-04-01 至 2017-08-31
  • 项目状态:
    已结题

项目摘要

Technical: The research component of this CAREER award is to study disorder in thin films of organic semiconductors on metal surfaces at the nanometer scale, using scanning probe techniques. The origin of disorder at metal-organic interfaces is assessed by ultrahigh vacuum scanning tunneling microscopy combined with new quantitative approaches to tunneling spectroscopy in constant current mode that have been explicitly developed for soft materials. The research aims to determine the functional form of the distribution of transport states for prototype disordered organics as well as the spatial correlation between transport states in the plane of the interface. Multilayer films are compared with monolayer films to answer the question of whether interfacial disorder differs significantly from bulk-like disorder. The basic materials research is expected to contribute to organic semiconductor device design capabilities by revealing the major factors governing charge injection at metal-organic interfaces. The research also aims to reveal the spatial disorder in charge transport properties in thick organic semiconductor films by applying conducting atomic force microscopy.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The project, if successful, can have impacts on the advancement of organic semiconductors for energy related applications. The research and education activities of the project are integrated. Graduate students are trained in an interdisciplinary environment. New scanning probe experiments will be adapted for the senior level undergraduate physics labs at the North Carolina State University. The plan is to modify the existing scanning tunnel microscopy to permit ballistic electron emission spectroscopy and to use the modified instrument to measure injection barriers at metal-organic interfaces in films grown by students. In addition, computational research project will be developed to allow undergraduates to explore aspects of one-dimensional quantum mechanics relevant to scanning tunneling spectroscopy.
技术支持:该CAREER奖的研究部分是使用扫描探针技术在纳米尺度上研究金属表面有机半导体薄膜中的无序。在金属-有机界面的无序的起源进行了评估,结合新的定量方法,隧道光谱在恒定电流模式下,已明确开发的软材料的双真空扫描隧道显微镜。该研究旨在确定原型无序有机物的输运态分布的函数形式以及界面平面中输运态之间的空间相关性。多层膜与单层膜相比,以回答这个问题,是否界面的障碍显着不同,从散装一样的障碍。基础材料的研究有望通过揭示金属-有机界面电荷注入的主要因素,为有机半导体器件的设计能力做出贡献。该研究还旨在通过应用导电原子力显微镜来揭示厚有机半导体薄膜中电荷传输特性的空间无序。非技术性:该项目涉及具有高技术相关性的材料科学热门领域的基础研究问题。该项目如果成功,将对能源相关应用的有机半导体的发展产生影响。该项目的研究和教育活动是一体化的。研究生在跨学科的环境中接受培训。新的扫描探针实验将适用于北卡罗来纳州州立大学的高级本科物理实验室。该计划是修改现有的扫描隧道显微镜,允许弹道电子发射光谱,并使用修改后的仪器来测量学生生长的薄膜中金属有机界面的注入势垒。此外,将开发计算研究项目,让本科生探索与扫描隧道光谱学相关的一维量子力学方面。

项目成果

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Daniel Dougherty其他文献

Daniel Dougherty的其他文献

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{{ truncateString('Daniel Dougherty', 18)}}的其他基金

Conference: Promoting Student Participation in the 15th International Symposium on Functional Pi Electron Systems
会议:促进学生参与第十五届功能π电子系统国际研讨会
  • 批准号:
    2229001
  • 财政年份:
    2023
  • 资助金额:
    $ 49.81万
  • 项目类别:
    Standard Grant
Single Molecule Scanning Tunneling Microscopy Studies of Dynamic Disorder in Organic Semiconductors
有机半导体动态无序的单分子扫描隧道显微镜研究
  • 批准号:
    1609799
  • 财政年份:
    2016
  • 资助金额:
    $ 49.81万
  • 项目类别:
    Standard Grant
TC: Small: Analysis for a Cloud of Policies: Foundations and Tools
TC:小型:政策云分析:基础和工具
  • 批准号:
    1116557
  • 财政年份:
    2011
  • 资助金额:
    $ 49.81万
  • 项目类别:
    Standard Grant

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