EAGER: Engineering Defect Structure in Nanocrystalline Silicon: A Fundamental Study Using Scanning Probe Microscopy
EAGER:纳米晶硅中的工程缺陷结构:使用扫描探针显微镜的基础研究
基本信息
- 批准号:1063263
- 负责人:
- 金额:$ 29.99万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-09-15 至 2014-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this EArly-Concept Grant for Exploratory Research (EAGER) award is to elucidate the fundamental microscopic processes that are responsible for metastability in hydrogenated nanocrystalline Si (nc-Si:H). Hydrogenated nanocrystalline silicon (nc-Si:H) with improved optoelectronic properties is important for cost-effective photovoltaics and high-performance optoelectronic devices. However, the electrical properties of nc-Si:H produced using existing technologies degrade under light exposure (light induced degradation) due to the generation of metastable defects. The origin of the defects and their effect on light absorption and charge transport at the nanoscale has been under debate for a long time. The proposed study will utilize a unique combination of novel scanning probe microscopy-based optoelectronic characterization and first-principles simulation of charge transport through crystalline and amorphous regions to quantify the role of various microscopic processes underlying the metastability.If successful, this interdisciplinary collaborative effort will help develop highly stable nc-Si:H that can be incorporated into advanced solar cell designs. The proposed effort will encourage the participation of Native Americans into higher education. Native Americans represent about 8.5% of the population in South Dakota, and attracting this community into science and technology areas has been a challenge. SDSU's College of Engineering has developed an active outreach program to motivate Native American high-school students towards higher education (SDSU-Flandreau Indian School Success Academy). This project includes a workshop on solar energy for Native American high-school and middle-school students. A new graduate course in nanoscale imaging of PV materials will be developed, and multiple graduate and undergraduate courses will be enhanced.
该探索性研究早期概念资助 (EAGER) 奖项的目的是阐明导致氢化纳米晶硅 (nc-Si:H) 亚稳定性的基本微观过程。 具有改进的光电性能的氢化纳米晶硅(nc-Si:H)对于具有成本效益的光伏和高性能光电器件非常重要。 然而,使用现有技术生产的 nc-Si:H 由于亚稳态缺陷的产生,在光照下其电性能会下降(光诱导降解)。 缺陷的起源及其对纳米尺度光吸收和电荷传输的影响长期以来一直存在争议。 拟议的研究将利用新型扫描探针显微镜的光电表征和通过晶体和非晶区域的电荷传输的第一原理模拟的独特组合来量化亚稳态中各种微观过程的作用。如果成功,这项跨学科合作将有助于开发高度稳定的 nc-Si:H,并将其纳入先进的太阳能电池设计中。 拟议的努力将鼓励美洲原住民参与高等教育。 美洲原住民约占南达科他州人口的 8.5%,吸引该社区进入科学技术领域一直是一项挑战。 SDSU 工程学院制定了一项积极的外展计划,以激励美国原住民高中生接受高等教育(SDSU-Flandreau 印度学校成功学院)。 该项目包括为美国原住民高中生和中学生举办太阳能研讨会。 将开发新的光伏材料纳米级成像研究生课程,并加强多个研究生和本科生课程。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Venkat Bommisetty其他文献
Venkat Bommisetty的其他文献
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{{ truncateString('Venkat Bommisetty', 18)}}的其他基金
MRI: Development of a Scanning Probe Microscopy Tool to Study Nanoscale Photoactivated Processes
MRI:开发扫描探针显微镜工具来研究纳米级光激活过程
- 批准号:
0923115 - 财政年份:2009
- 资助金额:
$ 29.99万 - 项目类别:
Standard Grant
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Chinese Journal of Chemical Engineering
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