Correlation between the atomic structure and electronic states in resistively switching oxides (A02)

电阻切换氧化物中原子结构和电子态之间的相关性（A02）

• 批准号: 202217763
• 金额: --
• 依托单位: PGI-7: Elektronische Materialien
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/202217763?language=en
• 关键词: Correlation; between; atomic; structure; electronic

Project A2 aims for the elucidation and quantification of spatial changes in the electronic and atomic structure taking place during repeated VC switching in order to determine the microscopic switching and failure mechanisms in dedicated binary and ternary oxide cells. Based on this knowledge, we will develop strategies to improve the reliability of VCM cells by rational materials design and the use of tailored pro-cessing conditions. By engineering cells with different switching modes identified in the second SFB peri-od (8W, C8W, filamentary, area-dependent), we are aiming to overcome the limiting trade-offs of current filamentary memory cells.

项目A2旨在阐明和量化重复VC切换期间发生的电子和原子结构的空间变化，以确定专用二元和三元氧化物电池的微观切换和故障机制。在此基础上，我们将通过合理的材料设计和定制的工艺条件来提高VCM电池的可靠性。通过设计具有在第二SFB周期中识别的不同开关模式（8W、C8W、附加、区域依赖）的单元，我们的目标是克服当前附加存储器单元的限制性权衡。