Correlation between the atomic structure and electronic states in resistively switching oxides (A02)

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Project A2 aims for the elucidation and quantification of spatial changes in the electronic and atomic structure taking place during repeated VC switching in order to determine the microscopic switching and failure mechanisms in dedicated binary and ternary oxide cells. Based on this knowledge, we will develop strategies to improve the reliability of VCM cells by rational materials design and the use of tailored pro-cessing conditions. By engineering cells with different switching modes identified in the second SFB peri-od (8W, C8W, filamentary, area-dependent), we are aiming to overcome the limiting trade-offs of current filamentary memory cells.