Investigating the influence of defects on charge carrier properties in resistive switching with near-field optical microscopy and spectroscopy (B05)

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Project B5 aims on the nanoscale imaging of conduction properties in electrical switching devices and materials of both types (PCM and VCM) in order to understand the fundamental defect-related mecha-nisms limiting their reliability and scalability. Specifically, we employ the imaging method of infrared scat-tering-type near-field optical microcopy (s-SNOM) to get quantitative information on the local charge car-rier density in the proximity of defects or switched areas at nanoscale resolution. Besides the in situ im-aging of filaments and dislocations in electrical switching devices, we will also address fundamental mate-rial and growth questions on chemically synthesized nanoparticles.