CAREER: Tailoring the Surface State Conduction in Semiconductor and Topological Insulator Nanowires

职业:定制半导体和拓扑绝缘体纳米线的表面态传导

基本信息

  • 批准号:
    1151534
  • 负责人:
  • 金额:
    $ 55万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2012
  • 资助国家:
    美国
  • 起止时间:
    2012-05-01 至 2018-04-30
  • 项目状态:
    已结题

项目摘要

This CAREER award is jointly funded by the Electronic and Photonic Materials Program (EPM) and Condensed Matter Physics Program (CMP), both in the Division of Materials Research.Technical: Due to the ubiquitously large surface-to-volume ratio of nanomaterials, surface and interface effects are essential to their electronic and optoelectronic properties. The research component of this CAREER award focuses on the fundamental study and control of surface state conduction in nanowires of indium arsenide and bismuth compounds (e.g., bismuth selenide or telluride), two model systems of the conventional III-V semiconductors and the recently discovered topological insulators. In conventional semiconductor nanowires, surface states generally degrade the material's performance and are often undesirable. However, for topological insulators, the topological surface states are the subject of interest for both basic research and potential device applications, and thus should be protected against the bulk states, which have been hindering the progress in the topological surface state research. In this research project, surface functionalization, doping and heterostructured material design are employed experimentally to tailor the surface conduction in semiconductor and topological insulator nanowires. These material and synthetic controls of the surface are further complemented by the conductance and capacitance spectroscopy for the quantitative understanding and evaluation of the surface versus bulk transport in nanowiresNon-technical: Nanowires have become an important material platform in modern nanoelectronics and photonics. Since nanomaterials have very high surface to volume ratio, surface effects could dominate the overall electronic properties and greatly impact the material performance. This CAREER project aims to achieve a comprehensive understanding of and precise control over the electronic surface states in nanowires of either conventional semiconductor or the recently discovered topological insulator materials. The research activities are expected to benefit multiple areas in which nanomaterials are playing an essential role. With this CAREER project, the PI also seeks to establish an education program integrated with the research project at Case Western Reserve University. Both graduate and undergraduate students engage actively in the project and learn state-of-the-art nanoscience and technology. In addition, pre-college students in the Cleveland area are being outreached through collaborations with a local girls' school and an inner city school with 100 percent of students receiving subsidized lunches. These outreach efforts are made to stimulate young students' interest and enthusiasm in pursuing science and technology as a future career. Further education and outreach endeavor of this project includes the development of a layman-level interactive web page and nanoscience course/lecture development related to the research activity.
该CAREER奖由材料研究部的电子和光子材料计划(Electronic and Photonic Materials Program,简称EMPs)和凝聚态物理计划(Condensed Matter Physics Program,简称CMP)共同资助。技术:由于纳米材料普遍具有大的表面积与体积比,表面和界面效应对其电子和光电性能至关重要。该CAREER奖的研究部分侧重于砷化铟和铋化合物纳米线中表面态传导的基础研究和控制(例如,硒化铋或碲化铋)、常规III-V族半导体的两个模型系统和最近发现的拓扑绝缘体。在传统的半导体纳米线中,表面态通常会降低材料的性能,并且通常是不受欢迎的。然而,对于拓扑绝缘体,拓扑表面态是基础研究和潜在的器件应用的感兴趣的主题,因此应该被保护免受体态的影响,体态一直阻碍着拓扑表面态研究的进展。在本研究计画中,利用表面官能化、掺杂及异质结构材料设计等方法,来调整半导体及拓扑绝缘体奈米线的表面导电性。这些材料和表面的合成控制进一步补充了电导和电容光谱,用于定量理解和评估材料中的表面与体传输非技术:纳米线已成为现代纳米电子学和光子学中的重要材料平台。由于纳米材料具有非常高的表面积与体积比,表面效应可能主导整体电子特性并极大地影响材料性能。该职业项目旨在全面了解和精确控制传统半导体或最近发现的拓扑绝缘体材料纳米线中的电子表面态。预计研究活动将使纳米材料发挥重要作用的多个领域受益。通过这个职业项目,PI还寻求建立一个与凯斯西储大学的研究项目相结合的教育计划。研究生和本科生都积极参与该项目,学习最先进的纳米科学和技术。此外,克利夫兰地区的大学预科学生正在通过与当地一所女子学校和一所内城学校的合作进行外联,100%的学生接受补贴午餐。这些外展工作是为了激发青年学生的兴趣和热情,把科学和技术作为未来的职业。该项目的进一步教育和推广奋进包括开发一个外行级别的互动网页和与研究活动相关的纳米科学课程/讲座。

项目成果

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Xuan Gao其他文献

Sex-specific association of epicardial adipose tissue with coronary artery disease in an Indian cohort: a cross-sectional study
印度队列中心外膜脂肪组织与冠状动脉疾病的性别特异性关联:一项横断面研究
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Can Xu;Rishabh Khurana;Xuan Gao;Constanze Lehertshuber;Ling Li;Amos Romer;Luigi Filippo Brizzi;M. Scheidt;Anurag Yadav;Tbs Buxi;Teresa Trenkwalder;Jason Zhensheng Qu;Dongjin Wang;Zhifen Chen
  • 通讯作者:
    Zhifen Chen
How Do Public Perceptions Affect the Security of Connected Places? A Systematic Literature Review
公众看法如何影响互联场所的安全?
  • DOI:
    10.3390/info15020080
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Agnieszka Dutkowska;Joe Bourne;Chengyuan An;Xuan Gao;Oktay Cetinkaya;Peter Novitzky;G. Ogunniye;Rachel Cooper;D. D. Roure;Julie McCann;Jeremy Watson;Tim Watson;Eleri Jones
  • 通讯作者:
    Eleri Jones
Electroencephalogram mutual information entropy analysis for Alzheimer's disease
阿尔茨海默病的脑电图互信息熵分析
A Method for the Reconstruction of Myocardial Fiber Structure in Diffusivity Adaptive Imaging Based on Particle Filter
基于粒子滤波器的扩散率自适应成像心肌纤维结构重建方法
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jun Yin;Xuan Gao;Min Wu;Yan Liang
  • 通讯作者:
    Yan Liang
Adsorption of PFCs and antibiotics from water using mesoporous silica and amino-functionalized mesoporous silicon materials: A review
使用中孔二氧化硅和氨基官能化中孔硅材料从水中吸附全氟化合物和抗生素:综述
  • DOI:
    10.1016/j.cej.2025.159642
  • 发表时间:
    2025-02-01
  • 期刊:
  • 影响因子:
    13.200
  • 作者:
    Bing Wang;Xuan Gao;Ruisi Qiu;Yuan Chen;Yujia Gao;Guojun Hu;Danchen Yu
  • 通讯作者:
    Danchen Yu

Xuan Gao的其他文献

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{{ truncateString('Xuan Gao', 18)}}的其他基金

Solid-liquid transition and intermediate state formation in strongly correlated 2D systems
强相关二维系统中的固液转变和中间态形成
  • 批准号:
    1607631
  • 财政年份:
    2016
  • 资助金额:
    $ 55万
  • 项目类别:
    Standard Grant
Elucidating the Anomalous Metallic State in Strongly Correlated Two-D Fermions with Density of States Measurements
用状态密度测量阐明强相关二维费米子中的反常金属态
  • 批准号:
    0906415
  • 财政年份:
    2009
  • 资助金额:
    $ 55万
  • 项目类别:
    Standard Grant

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