Metamorphic Antimonides for Infrared Photonics

用于红外光子学的变质锑化物

• 批准号: 1160843
• 负责人: Gregory Belenky
• 金额: $ 45.53万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-01 至 2016-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1160843&HistoricalAwards=false
• 关键词: Metamorphic; Antimonides; Infrared; Photonics

AbstractTechnical Description: The goal of this project is to develop the epitaxial technology to grow metamorphic antimonide-based materials and study their structural, optical and electrical properties. The fundamental absorption edge of these semiconductors can vary within a wide spectral range from near to far infrared. Currently the full technological potential of antimonide-based semiconductors cannot be utilized since the direct growth of epitaxial layers is limited by the availability of the binary substrates. The large lattice mismatch between the epitaxial layers and substrate leads to high densities of crystalline defects. The approach of compositionally graded buffer layers can address this issue based on understanding of the dislocation formation and dislocation motion in soft antimonide materials. The critical factor is strain relief in the compositionally graded buffer layer confining the network of misfit dislocations in the transitional region near the substrate. The lattice constant becomes truly a design parameter unveiling fundamental advantages offered by antimonide semiconductors. The experimental studies of the optical and electrical properties of narrow bandgap bulk materials and heterostructures grown on top of metamorphic buffers are necessary to develop the fundamental knowledge of the properties of this new class of semiconductors. Non-technical Description: Antimonide-based narrow bandgap semiconductors are important materials for development of the efficient photonic and electronic devices which are suitable for a variety of industrial and military applications. The potential of this class of semiconductors can be fully utilized when the lattice constant of the device heterostructure becomes one of the design parameters. The projected studies are directly related to the problem of integration of electronics and photonics devices. The societal impact of the research is amplified by outreach activities. Undergraduate and graduate students working on development and implementation of various optical sensors will be able to utilize novel materials with rare optical and electrical properties for their original designs.

摘要技术说明：本计画的目标是发展磊晶技术以成长变质锑化物基材料，并研究其结构、光学及电学性质。这些半导体的基本吸收边可以在从近红外到远红外的宽光谱范围内变化。目前，锑化物基半导体的全部技术潜力不能被利用，因为外延层的直接生长受到二元衬底的可用性的限制。外延层和衬底之间的大的晶格失配导致高密度的晶体缺陷。基于对软锑化物材料中位错形成和位错运动的理解，成分梯度缓冲层的方法可以解决这个问题。的关键因素是应变救济的成分梯度缓冲层限制在过渡区附近的衬底的失配位错网络。晶格常数成为真正的设计参数，揭示了锑化物半导体提供的基本优势。实验研究的光学和电学性质的窄带隙的块状材料和异质结构上生长的变质缓冲层是必要的，以发展这类新的半导体的性质的基础知识。非技术描述：锑系窄带隙半导体材料是开发高效光子和电子器件的重要材料，适用于各种工业和军事应用。当器件异质结构的晶格常数成为设计参数之一时，这类半导体的潜力可以得到充分利用。计划中的研究与电子和光子器件的集成问题直接相关。研究的社会影响通过外联活动得到扩大。从事各种光学传感器开发和实施的本科生和研究生将能够利用具有罕见光学和电学特性的新型材料进行原始设计。