Materials World Network: Nanostructures with Controllable Parameters for Mid-Infrared Photonics

材料世界网络：用于中红外光子学的参数可控的纳米结构

• 批准号: 0710154
• 负责人: Gregory Belenky
• 金额: $ 48.6万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-08-15 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0710154&HistoricalAwards=false
• 关键词: Materials; World; Network; Nanostructures; Controllable

This research effort aims to circumvent the fundamental limit of room temperature performance of contemporary mid-infrared photonic devices. The natural narrow bandgap materials suffer from severe nonradiative recombination and free carrier absorption. This peculiarity averts development of high performance room temperature operated longwavelength optoelectronic devices in the technologically important 2 to 5 m spectral range. The investigators plan to develop a new class of high radiative efficiency mid-infrared nanostructures based on the GaSb material system including GaSb dilute-nitrides. The participating researchers perform detailed studies of the carrier recombination dynamics, including original experimental investigation of the theoretically predicted resonant and interface assisted Auger recombination specific to nanomaterials for mid-infrared photonics. The role of hot carrier and nonequlibrium phonon effects are paid special attention. The original concept of the resonant Auger assisted population inversion is experimentally studied for the first time. The development of a novel class of mid-infrared nanostructure materials, complemented with comprehensive experimental and theoretical studies, will enhance knowledge of narrow gap nanostructure physics and can transform traditional approaches to mid-infrared photonic device design.This project is a collaborative research effort between the State University of New York at Stony Brook (USA) and Saint-Petersburg State Polytechnic University (Russia). The combination of expertise at Stony Brook in design and manufacturing of mid-infrared photonic devices and the expertise of the Russian counterparts in experimental and theoretical studies of the hot carrier and recombination phenomena in narrow gap semiconductors makes the proposed material development to rely on comprehensive understanding of the underlying physics and to be oriented at real world applications. The intellectual merit includes advancing knowledge and understanding of the physical phenomena particular to low dimensional carriers and improving the understanding of Auger recombination and free carrier absorption in narrow gap nanostructures. The project may result in a significant technology addition to national security. GaSb- and InAs-based narrow band gap nanostructure materials are poised to provide the basis for room temperature operation, mid-infrared photonics.This award is co-supported by the Office of International Science and Engineering.

这项研究工作的目的是规避当代中红外光子器件的室温性能的基本限制。天然窄带隙材料具有严重的非辐射复合和自由载流子吸收。这一特点避免了在技术上重要的2至5米的光谱范围内的高性能室温操作的长波光电器件的发展。研究人员计划开发一类新的高辐射效率中红外纳米结构，其基于包括GaSb稀氮化物的GaSb材料系统。参与的研究人员对载流子复合动力学进行了详细的研究，包括对理论预测的共振和界面辅助俄歇复合的原始实验研究，这些复合特定于中红外光子学的纳米材料。特别注意了热载流子和非等频声子效应的作用。首次对共振俄歇辅助粒子数反转的原始概念进行了实验研究。开发一种新型的中红外纳米结构材料，辅以全面的实验和理论研究，将提高窄隙纳米结构物理学的知识，并可以改变传统的方法，中红外光子器件design.This项目是州立大学的纽约在斯托尼布鲁克（美国）和圣彼得堡国立理工大学（俄罗斯）之间的合作研究工作。斯托尼布鲁克在设计和制造中红外光子器件方面的专业知识与俄罗斯同行在窄隙半导体中热载流子和复合现象的实验和理论研究方面的专业知识相结合，使得拟议的材料开发依赖于对基础物理的全面理解，并面向真实的世界应用。智力上的优点包括推进知识和理解的物理现象，特别是低维载流子和提高俄歇复合和自由载流子吸收窄间隙纳米结构的理解。该项目可能会为国家安全带来重大技术进步。GaSb和InAs基窄带隙纳米结构材料有望为室温操作、中红外光子学提供基础。该奖项由国际科学与工程办公室共同支持。