CSR: Small: Heterogeneous Memory Design: Exploiting Device Diversity for Superior System Performance

CSR：小型：异构内存设计：利用设备多样性实现卓越的系统性能

• 批准号: 1218183
• 负责人: Chaitali Chakrabarti
• 金额: $ 44万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-01 至 2016-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1218183&HistoricalAwards=false
• 关键词: CSR; Small; Heterogeneous; Memory; Design

As technology scales to 10nm, CMOS-based memory devices may no longer be the technology of choice. Instead, emerging technologies, such as phase-change memory, spin-transfer torque magnetic memory, and ferromagnetic memory, are more scalable and are viable alternatives for the post-silicon era. These memory devices are diverse in their physical operation and performance and there is no winner-takes-all! This project advocates the use of heterogeneous memory systems which combine the advantages of the different memory technologies to deliver superior system performance. The first step involves development of a hierarchical memory model which captures both the generic behavior and unique device physics of the different memory technologies. This model is also capable of predicting the performance and reliability of future technology nodes. The next step is on integration of this model into circuit and architecture-level simulators for exploration of heterogeneous memory systems. The intellectual merit lies in the coordinated effort spanning from device physics to modeling to architecture exploration. Research advances will be made in memory device modeling including predictive modeling, error analysis and modeling, error management for improved reliability and heterogeneous memory system design. The research outcome from this project is expected to have a significant impact on integrated circuit design industry and national economy. The proposed effort will foster a unique environment for multi-disciplinary research and training. It will help bridge the gap between memory device physics and computer architects by training undergraduate and graduate students in cross-disciplinary research and also by providing an open simulation environment for exploratory memory design.

随着技术扩展到10 nm，基于CMOS的存储器件可能不再是首选技术。相反，相变存储器、自旋转移矩磁存储器和铁磁存储器等新兴技术更具可扩展性，是后硅时代的可行替代品。这些存储器设备在物理操作和性能方面各不相同，没有赢家通吃！该项目提倡使用异构内存系统，它将不同内存技术的优点联合收割机结合起来，以提供上级系统性能。 第一步涉及开发一个分层存储器模型，该模型捕获不同存储器技术的通用行为和独特的设备物理特性。该模型还能够预测未来技术节点的性能和可靠性。下一步是将此模型集成到电路和架构级模拟器中，以探索异构存储器系统。其智力价值在于从设备物理到建模再到架构探索的协调努力。存储器件建模的研究进展包括预测建模、误差分析与建模、提高可靠性的误差管理和异构存储系统设计。本项目的研究成果将对集成电路设计产业和国民经济产生重大影响。拟议的努力将为多学科研究和培训创造一个独特的环境。它将有助于弥合存储设备物理和计算机架构师之间的差距，通过培训本科生和研究生的跨学科研究，并提供一个开放的模拟环境，探索性的内存设计。