A Novel Cu/CNT Material System for Through Silicon Via Interconnects

该奖项旨在表彰支持微/纳米电子互连新材料系统开发的研究。正在研究的材料系统有望克服与铜互连相关的几个问题。这种材料系统将使得制造具有低电阻和高机械强度的纳米级互连成为可能，从而提供强大的下一代纳米互连。利用先进的微/纳米制造工艺，碳纳米管（CNT）将在硅通孔（TSV）内生长，并添加铜基体以增强CNT的密度、强度和导电性。 将测量各个通孔和菊花链通孔的电阻，并使用分析方法来确定电流的首选路径，并深入了解铜和碳纳米管束的界面电阻。将通过包含 TSV 的晶圆的弯曲测试和热膨胀来研究机械强度，同时将监控 TSV 的电阻变化以进行故障检测。有限元模拟将用于验证和校准实验。将检查机械和热机械疲劳耐久性。互连是任何电子系统的重要组成部分。特别是，TSV 是制造三维集成电路 (3D-IC) 所需的关键互连。因此，互连领域的进步将增强复杂电子设备的三维（3D）集成。如果成功，这项研究将产生一种新的材料系统，能够解决当今铜互连存在的几个性能和可​​靠性问题，例如非常小尺寸的高电阻率和电迁移。本研究中进行的研究将通过促进子系统的小型化并为高产量、大批量的制造工艺提供途径，从而为微/纳米电子器件和系统的制造和制造带来新的方向。 外展活动包括为 K-12 学生举办大学讲习班、与阿拉巴马大学 LSAMP 项目合作招募女性和少数族裔参与研究项目，以及参与 REU 站点。

This award is for research supporting the development of a new material system for micro/nanoelectronic interconnects. The material system under study is expected to overcome several issues associated with copper interconnects. This material system will make it possible to fabricate nanoscale interconnects that possess low electrical resistance and high mechanical strength to provide a robust next generation of nano-interconnects. Utilizing advanced micro/nanofabrication processes, carbon nanotubes (CNTs) will be grown inside through-silicon vias (TSVs) and a copper matrix will be added to enhance the density, strength and conductivity of the CNTs. Electrical resistance of individual vias and daisy-chained vias will be measured and an analytical approach will be used to determine the preferred path of current and obtain insights on interface resistance of copper and CNT bundles. Mechanical strength will be investigated through bend tests and thermal expansion of wafers containing TSVs while the electrical resistance of TSVs will be monitored for resistance variation for failure detection. Finite element simulation will be used to verify and calibrate the experiments. Mechanical and thermo-mechanical fatigue durability will be examined. Interconnects are an essential component of any electronic system. In particular, TSVs are key interconnects necessary for fabrication of three-dimensional integrated circuits (3D-ICs). Therefore, advancements in the area of interconnects will enhance three dimensional (3D) integration of complex electronic devices. If successful, this research will result in a new material system that is capable of resolving several performance and reliability issues that exist with copper interconnects today, such as high resistivity at very small dimensions and electromigration. The research conducted in this study will lead to new directions taken in the manufacturing and fabrication of micro/nanoelectronic devices and systems by facilitating miniaturization of sub-systems and providing a path for a high-yield, high-volume manufacturing process. Outreach activities include a college workshop for K-12 students, the recruitment of women and minorities into the research program in collaboration with the University of Alabama's LSAMP Program, and participation in an REU Site.