An Assessment of Options for Post-CMOS Emerging Research Devices and Related Materials: Four Workshops to be Held in 2012 in the Netherlands, Canada, France and San Francisco.
对后 CMOS 新兴研究器件和相关材料选项的评估:2012 年将在荷兰、加拿大、法国和旧金山举办四场研讨会。
基本信息
- 批准号:1237813
- 负责人:
- 金额:$ 4万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-06-15 至 2013-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ObjectiveThe objective of this project is to conduct an international series of four face-to-face workshopsto assess quantitatively the potential and status of four topics related to research on nanoelectronicsdevices and materials. The topics are: Emerging Research Memory Devices, Emerging ResearchLogic Devices, Emerging Research Architectures, and Emerging Research Materials critical forthe realization of specific nanoelectronics devices. Participants and contributors to theseworkshops will include academic and industrial domain experts. The outputs of these workshopswill guide and input preparation of the 2013 International Technology Roadmap for Semiconductorschapters on Emerging Research Devices and Emerging Research Materials. This grant willbe used to pay partial travel expenses for some presenters, particularly academics, requestingtravel assistance.The workshops series will focus on the relationship between the Semiconductor Industry asit endeavors to continue to advance semiconductor technology and the work of the NationalNanotechnology Initiative (NNI) research community. One purpose of these meetings is to evaluatethe potential and status of each specific nanotechnology entry identified by the ITRS ERD/ERMWorking Groups as having potential to enable a new paradigm for information processing. Anotherpurpose is to identify research opportunities that, if addressed, will benefit the SemiconductorIndustry and fall within the scope of the NNI research agenda. Presenters will be providedwith a list of questions that are intended to stimulate discussions during the workshops.Each workshop will be documented by a report described below.Intellectual MeritIn bringing together leading academic and industrial scientists to discuss, debate and reachconsensus on the potential performance and key scientific challenges related to several emergingresearch memory and logic device technologies, these workshops will provide an excellent forumfor intellectual pursuit and discernment of important/limiting scientific issues related toapproaches to information processing. The intellectual merit of these workshops is illustratedby way of example.In the first example, the physics of operation and extreme scaling projections are not wellunderstood for ?select devices? required for use in nanoscale memory arrays. These selectdevices are needed to employ a new class of non-volatile memory cells, called resistive randomaccess memory (ReRAM),that may replace NAND flash for technology generations beyond the 16nmtechnology node. Generally speaking, a memory cell in an array can be viewed as being composedof two fundamental components: a ?storage node?, which is usually characterized by the physicsof operation of the particular memory device used, and a ?selector?. The selector is a devicewhich allows a given memory cell in an array to be singularly addressed for read or writeoperation without addressing its nearest neighbor cells. It is a non-linear element, whichcan operate as a switch, such as a diode-type, or as a resistive-switch-type structure. Thelatter category includes novel concepts such as Mott switches, threshold switches, and mixedionic electronic conduction switches. Understanding the dominant physics related to theirnon-linear I-V characteristics is essential to employing these select devices in a highlydense non-volatile ReRAM crossbar architecture. It should be noted that for several advancedconcepts of ReRAM, the storage node in principle can be scaled down below 10 nm, and the memorydensity will be limited by a somewhat larger conventional three-terminal select device. Thusthe select device represents a serious bottleneck for scaling a ReRAM memory cell to 16 nmand beyond. Application of these new non-volatile memory devices to a crossbar memory structurewill enable a paradigm shift to a new storage class memory (SCM) off-chip memory architecturediscussed below.Another example, related to logic, is a family of new nanoelectronic low subthreshold-swingdevices: e.g., negative Cg devices. These devices offer the attractive possibility of performinghigh speed logic while dissipating much lower power compared to a conventional MOSFET. Thecircuit design and the academic research communities have a expressed a strong interest forthe ERD Technical Working Group to explore the physics of operation of these devices and thecircuit design space in which they can operate in order to better understand their potentialperformance. This information will provide important input to these communities regardingtheir accelerating development of low-power electronics.Broader ImpactBy carefully assessing the potential performance and scientific/technological challenges foreach new memory select device and of new low-power logic devices, as well as emerging architectures,these workshops will provide important documented inputs to the research community as theypursue their exploration of many emerging research devices.One venue being initiated to obtain broad dissemination of this information is the editingand publication of a comprehensive book on nanoelectronics entitled ?Emerging NanoelectronicDevices?. A proposal is under review by a major publisher who has expressed considerable interest.Furthermore, the educational value and planning impact of these workshops on the internationalresearch community are quite substantial. Several universities (e.g., Stanford, U. Minnesota,U. Tokyo,?) use the ITRS chapters on Emerging Research Devices and Emerging Research Materialsresulting from these workshops as texts in their Nanoelectronics courses. Also several internationalresearch funding agencies (e.g., SRC, NSF, and NIST Nanoelectronics Research Initiative, theEU Framework Program 8, ?) use the material in these chapters as inputs to their decisionson research directions in their Nanoelectronics research programs.
本项目的目标是开展一个由四个面对面的工作坊组成的国际系列研讨会,以定量评估与纳米电子器件和材料研究相关的四个主题的潜力和现状。主题包括:新兴研究存储器件、新兴研究逻辑器件、新兴研究架构以及对实现特定纳米电子器件至关重要的新兴研究材料。这些研讨会的参与者和贡献者将包括学术和工业领域的专家。这些讲习班的成果将指导2013年新兴研究设备和新兴研究材料半导体断路器国际技术路线图的编制工作并提供投入。这笔赠款将用于支付一些演讲者,特别是学者,申请差旅援助的部分旅费。研讨会系列将集中讨论半导体行业与继续推进半导体技术的努力与国家纳米技术倡议(NNI)研究界工作之间的关系。这些会议的目的之一是评价国际热核研究报告ERD/ERM工作组确定的每一项具体纳米技术条目的潜力和状况,认为它们有可能实现信息处理的新范式。另一个目的是确定研究机会,如果得到解决,将使半导体行业受益,并属于NNI研究议程的范围。报告者将被提供一个问题清单,这些问题旨在激发研讨会期间的讨论。每个研讨会都将由下面描述的一份报告来记录。智力价值在将顶尖的学术和工业科学家聚集在一起,讨论、辩论和达成共识,讨论与几种新兴的研究记忆和逻辑器件技术相关的潜在性能和关键科学挑战时,这些研讨会将为智力追求和识别与信息处理方法相关的重要/限制性科学问题提供一个极好的论坛。通过例子说明了这些研讨会的智力价值。在第一个例子中,对于选定的设备,操作物理和极端比例投影没有被很好地理解。在纳米级存储器阵列中使用时需要。这些选定的器件需要采用一种名为电阻式随机存取存储器(ReRAM)的新型非易失性存储单元,它可能会在16纳米技术节点之后的几代技术中取代NAND闪存。一般而言,阵列中的存储单元可被视为由两个基本组件组成:存储节点和选择器,存储节点通常由所使用的特定存储设备的操作物理来表征。选择器是允许对阵列中的给定存储单元进行单一寻址以进行读或写操作而无需寻址其最近的相邻单元的设备。它是一种非线性元件,可以用作开关,如二极管类型,或作为阻性开关类型的结构。后者包括Mott开关、阈值开关和混频电子传导开关等新概念。了解与其非线性I-V特性相关的主要物理特性对于在高密度非易失性ReRAM交叉开关架构中使用这些精选器件至关重要。应该注意的是,对于ReRAM的几个先进概念,原则上可以将存储节点缩小到10 nm以下,并且存储器密度将受到稍大一些的传统三端选择设备的限制。因此,选择器件是将ReRAM存储单元扩展到16nmand以上的严重瓶颈。将这些新的非易失性存储器器件应用于交叉开关存储器结构将使得能够实现向新的存储类存储器(SCM)片外存储器体系结构的范例转变。另一个与逻辑相关的例子是一系列新的纳米电子低亚阈值摆动器件:例如,负CG器件。与传统的MOSFET相比,这些器件提供了在消耗低得多的功率的同时执行高速逻辑的极具吸引力的可能性。电路设计和学术研究界表达了对ERD技术工作组的强烈兴趣,希望他们探索这些设备的运行物理和它们可以运行的电路设计空间,以便更好地了解它们的潜在性能。这些信息将为这些社区提供有关他们加速发展低功耗电子产品的重要信息。广泛影响通过仔细评估新的存储选择设备和新的低功率逻辑设备以及新兴体系结构之前的潜在性能和科学/技术挑战,这些研讨会将向研究社区提供重要的书面输入,因为他们不愿探索许多新兴的研究设备。为广泛传播这些信息而发起的一个场所是编辑和出版一本关于纳米电子学的综合书籍,标题为?新兴纳米电子设备?一家主要出版商正在审查一项提案,该出版商表示了相当大的兴趣。此外,这些研讨会对国际研究界的教育价值和规划影响也是相当大的。几所大学(如斯坦福大学、明尼苏达大学、东京大学、?)使用国际热核研究报告关于新兴研究装置和新兴研究材料的章节作为其纳米电子学课程的课本。还有几个国际研究资助机构(例如,SRC、NSF和NIST纳米电子研究计划、欧盟框架计划8、?)使用这些章节中的材料作为他们在纳米电子学研究计划中决定研究方向的输入。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Victor Zhirnov其他文献
Highly conductive polymers: superconductivity in nanochannels or an experimental artifact?
- DOI:
10.1007/s11051-010-9939-9 - 发表时间:
2010-05-01 - 期刊:
- 影响因子:2.600
- 作者:
Harley Hayden;Seongho Park;Victor Zhirnov;Ralph Cavin;Paul A. Kohl - 通讯作者:
Paul A. Kohl
Victor Zhirnov的其他文献
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{{ truncateString('Victor Zhirnov', 18)}}的其他基金
Workshop on Microsystems for Electroceuticals and Bioelectronic Medicine, April 12-13, 2017, IBM Conference Center Washington DC.
电子药物和生物电子医学微系统研讨会,2017 年 4 月 12 日至 13 日,华盛顿特区 IBM 会议中心。
- 批准号:
1738795 - 财政年份:2017
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
Workshop on Enabling a Future Information Technology Revolution, March 30-31, 2015, IBM Conference Center, Washington, DC
实现未来信息技术革命研讨会,2015 年 3 月 30 日至 31 日,华盛顿特区 IBM 会议中心
- 批准号:
1535751 - 财政年份:2015
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
Forum on Nanoelectronic Manufacturing: From Materials to Systems
纳米电子制造论坛:从材料到系统
- 批准号:
1406415 - 财政年份:2014
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
Forum on Integrated Sensors for Cybersystems (FISC-2030)
网络系统集成传感器论坛 (FISC-2030)
- 批准号:
1144999 - 财政年份:2011
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
International Mini-workshop series on An Assessment of Options for Post-CMOS Emerging Research Devices and Related Materials to be held April - Nov. 2010
关于后 CMOS 新兴研究器件和相关材料选项评估的国际小型研讨会系列将于 2010 年 4 月至 11 月举行
- 批准号:
1034585 - 财政年份:2010
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
WORKSHOP: SRC/NSF Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures, September, 2009.
研讨会:SRC/NSF 2020 年半导体存储器策略论坛:工艺、设备和架构,2009 年 9 月。
- 批准号:
0936391 - 财政年份:2009
- 资助金额:
$ 4万 - 项目类别:
Standard Grant
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International Mini-workshop series on An Assessment of Options for Post-CMOS Emerging Research Devices and Related Materials to be held April - Nov. 2010
关于后 CMOS 新兴研究器件和相关材料选项评估的国际小型研讨会系列将于 2010 年 4 月至 11 月举行
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关于“后 CMOS 新兴研究器件和相关材料的选择评估”的国际迷你研讨会系列。
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