Interfacial induced Properties in GaN devices

目的：该计划的目标是开发存储器件和磁性隧道结，基于控制稀磁性III-氮化物半导体的磁状态。这些器件结构将表明在稀磁GaN中操纵自旋态是可行的。该计划的成功将是实现稀磁GaN非易失性存储器的一步。智力优势：该计划将利用控制异质结构界面的磁性来构建存储设备和磁传感器，这些设备和传感器通过外部电场来操纵自旋状态。该研究项目将集中于满足以下目标：i）建立介导载流子与磁性掺杂GaN铁磁特性之间的相关性。ii）演示存储单元中铁磁性的电场控制。iii）展示基于磁性GaN/p-GaN层状结构的磁阻特性的磁传感器。更广泛的影响：将半导体器件与自旋电子应用相结合，具有室温氮化物基磁性器件的潜力。所考虑的结构是变革的实现的室温非易失性存储器和传感器设备的基础上III-氮化物。为了教育推广，一个研究小组将与NCSU百年校园的科学学院合作，制造令人兴奋的新电磁设备。

Objective: The objective of this program is to develop memory devices and magnetic tunnel junctions, based on controlling the magnetic state of dilute magnetic III-Nitride semiconductors. These device structures will show that manipulation of spin states is feasible in dilute magnetic GaN. The success of this program will be a step towards the realization of non-volatile memory in dilute magnetic GaN. Intellectual Merit: The program will utilize controlling magnetism at hetero-structure interfaces to build memory devices and magnetic sensors that manipulate the spin states by an external electric field. The research project will focus on meeting the following goals: i) Establish correlations between mediated carriers and the ferromagnetic properties in magnetically doped GaN. ii) Demonstrate electric field control of ferromagnetism in memory cells. iii) Demonstrate magnetic sensors based on the magneto-resistance properties of magnetic-GaN/p-GaN layered structures.Broader impacts: Coupling semiconductor devices with spin-electronic applications has the potential for room temperature nitride-based magnetic devices. The structures considered are transformative by the realization of room-temperature non-volatile memory and sensor devices based on III-nitrides. For educational outreach, a study group will work with the School of science on the NCSU Centennial Campus to make exciting new electro-magnetic devices.