Interfacial induced Properties in GaN devices

GaN 器件中的界面诱导特性

• 批准号: 1307004
• 负责人: Lewis Reynolds
• 金额: $ 35.3万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-09-01 至 2018-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1307004&HistoricalAwards=false
• 关键词: Interfacial; induced; Properties; GaN; devices

Objective: The objective of this program is to develop memory devices and magnetic tunnel junctions, based on controlling the magnetic state of dilute magnetic III-Nitride semiconductors. These device structures will show that manipulation of spin states is feasible in dilute magnetic GaN. The success of this program will be a step towards the realization of non-volatile memory in dilute magnetic GaN. Intellectual Merit: The program will utilize controlling magnetism at hetero-structure interfaces to build memory devices and magnetic sensors that manipulate the spin states by an external electric field. The research project will focus on meeting the following goals: i) Establish correlations between mediated carriers and the ferromagnetic properties in magnetically doped GaN. ii) Demonstrate electric field control of ferromagnetism in memory cells. iii) Demonstrate magnetic sensors based on the magneto-resistance properties of magnetic-GaN/p-GaN layered structures.Broader impacts: Coupling semiconductor devices with spin-electronic applications has the potential for room temperature nitride-based magnetic devices. The structures considered are transformative by the realization of room-temperature non-volatile memory and sensor devices based on III-nitrides. For educational outreach, a study group will work with the School of science on the NCSU Centennial Campus to make exciting new electro-magnetic devices.

目的：本项目的目标是基于稀磁iii -氮化物半导体的磁态控制，开发存储器件和磁隧道结。这些器件结构将表明，在稀磁性氮化镓中操纵自旋态是可行的。该方案的成功将是在稀磁GaN中实现非易失性存储器的一步。智力优势：该项目将利用控制异质结构界面的磁性来构建存储设备和磁传感器，通过外部电场来操纵自旋状态。该研究项目将重点实现以下目标：i)建立磁掺杂GaN中介导载流子与铁磁性能之间的相关性。ii)演示存储单元中铁磁性的电场控制。iii)基于磁性gan /p-GaN层状结构的磁阻特性演示磁传感器。更广泛的影响：耦合半导体器件与自旋电子应用具有室温氮基磁性器件的潜力。通过实现基于iii -氮化物的室温非易失性存储器和传感器器件，所考虑的结构具有革命性。在教育推广方面，一个研究小组将与NCSU百年校区的科学学院合作，制造令人兴奋的新型电磁设备。