Nanofabrication, Characterization, and Analysis of Topological Insulator Nanostructures

拓扑绝缘体纳米结构的纳米制造、表征和分析

• 批准号: 1307744
• 负责人: Lu Li
• 金额: $ 36万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-08-15 至 2016-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1307744&HistoricalAwards=false
• 关键词: Nanofabrication; Characterization; Analysis; Topological; Insulator

The objective of this program is to create nanoelectronic devices made from topological insulator nanostructures and explore new areas for creating and characterizinglow-dissipation electronics. In particular, the PIs intend to address the following aims: (i) fabricating transistors based on topological insulator nanoribbons and nanojunctions by using template-mediated growth; (ii) characterizing the magnetotransport and thermoelectric properties of topological insulator devices by using torque magnetometry and capacitance spectroscopy; and (iii) achieving an in-depth understanding of experimental results through theoretical modeling.The intellectual merit is that the successful completion of the proposed research can transform the basis of future transistors with low power consumption and enable reconfigurable topological quantum computation. Particularly, the fundamental science associated with the modulation of topological surface states via external fields will be studied allowing for the realization of electronic operations involving reversible switching of topological states. The performance of the proposed new topological transistor devices would surpass that of conventional silicon based devices, in terms of the higher speed (~1 THz) and the lower power consumption (microwatt).The broader impacts are extending nanoelectronics education opportunities for students from high schools and universities. All the PIs are involved in education and outreach programs; including a collaboration with The University of Michigan's academic programs to provide research opportunities for undergraduate students, as well as a collaboration with Lurie Nanofabrication Facility in outreach workshops for K-12 educators, workshops for the Michigan Science Teacher Association conference, and the "NanoCamps" program sponsored by National Science Foundation.

该计划的目标是创建由拓扑绝缘体纳米结构制成的纳米电子器件，并探索创建和表征低耗散电子器件的新领域。具体而言，PI旨在解决以下目标：（i）通过使用模板介导的生长来制造基于拓扑绝缘体纳米带和纳米结的晶体管;（ii）通过使用转矩磁力计和电容光谱来表征拓扑绝缘体器件的磁输运和热电性质;及（iii）达致以下目的─通过理论建模深入理解实验结果。智力的优点是，成功完成拟议的研究可以改变低功耗的未来晶体管的基础，并使可重构拓扑量子计算。特别是，将研究与通过外场调制拓扑表面状态相关的基础科学，从而实现涉及拓扑状态可逆切换的电子操作。提出的新拓扑晶体管器件的性能将超过传统的硅基器件，在更高的速度（~1 THz）和更低的功耗（微瓦）方面，更广泛的影响是扩大了高中和大学学生的纳米电子学教育机会。所有的PI都参与教育和推广计划;包括与密歇根大学的学术计划合作，为本科生提供研究机会，以及与Lurie Nanofabstract Facility合作，为K-12教育工作者举办推广研讨会，密歇根科学教师协会会议研讨会，以及由国家科学基金会赞助的“NanoCamps”计划。

项目成果

Rotational Symmetry Breaking in a Trigonal Superconductor Nb-doped Bi2Se3

• DOI: 10.1103/physrevx.7.011009
• 发表时间: 2017-01-27
• 期刊: PHYSICAL REVIEW X
• 影响因子: 12.5
• 作者: Asaba, Tomoya;Lawson, B. J.;Li, Lu
• 通讯作者: Li, Lu