课题基金 / 基金详情

Diluted Magnetic Germanium Nanowire-Based Nonvolatile Transpinor

Diluted Magnetic Germanium Nanowire-Based Nonvolatile Transpinor
基于稀磁锗纳米线的非易失性 Transpinor
批准号:
1308358
负责人:
Kang Wang
金额:
$36.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-07-01 至 2016-06-30

项目摘要

项目成果

Kang Wang的其他基金

相似基金

相关文献

中文摘要
翻译
本计画的目的是设计并建构一种新颖的非挥发性晶体管元件,此元件使用一种具有电场控制顺磁性至铁磁性相变的稀磁锗奈米线。与传统的硅互补金属氧化物半导体器件和其他先前提出的自旋场效应晶体管相比,所提出的transpinor器件提供了许多独特的优点,包括独特的非易失性,增加的功能,低功耗和更快的信息处理切换。智能的优点是,建议transpinor设备调用新的量子物理,使铁磁相变的控制(集体自旋)在稀磁半导体在室温下。此外,利用电场来实现相变控制将能够降低功耗。更广泛的影响是创造新的知识,并提供深入了解的载体介导的铁磁性和自旋输运的纳米结构,从而建立一个新的平台,室温自旋电子器件。这种影响将是变革性的,因为它涉及到新的功能磁性纳米材料和物理的发现,这可能会改变半导体技术与自旋电子学的集成,形成非易失性系统,通过引入新型的高性能室温自旋为基础的电子器件超越传统的缩放互补金属氧化物半导体器件。它将建立新的低能耗电子技术,以及新的市场和经济。该计划还提供了一个独特的多学科研究和教育机会,将自旋电子学纳入课程
英文摘要
The objective of this program is to design and build a novel nonvolatile transpinor device using a diluted magnetic germanium nanowire with an electric field-controlled paramagnetism-to-ferromagnetism phase transition. Compared with conventional silicon complementary metal-oxide-semiconductor devices and other previously proposed spin field-effect transistors, the proposed transpinor device provides many unique advantages, including unique nonvolatility, added functionalities, lower power dissipation and faster switching for information processing.The intellectual merit is that the proposed transpinor device invokes new quantum physics to enable the control of the ferromagnetic phase change (collective spins) in diluted magnetic semiconductor at room temperature. Additionally, the use of electic field to achieve the control of phase transition will enable the reduction of power dissipation. The broader impacts are to create new knowledge and to provide an in-depth understanding of the carrier-mediated ferromagnetism and spin transport in nanostructures, therefore establishing a new platform for room-temperature spintronic devices. The impact will be transformative because it involves the discovery of novel functional magnetic nanomaterials and physics, which may tranform semiconductor technology with the integration of spintronics to form nonvolatile systems by introducing new kinds of high-performance room-temperature spin-based electronic devices beyond the traditional scaled complementary metal-oxide-semiconductor devices. It will establish new low-energy electronics technology, and new market and economy. The program also offers a unique multi-disciplinary research and educational opportunity to incorporate spintronics into curriculum
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
Workshop on Future of Semiconductors and Beyond: Devices and Technologies: To Be Held Virtually Feb 8-9, and 17-18, 2021.
NSF Convergence Accelerator Track C: Chiral-Based Quantum Interconnect Technologies (CirquiTs)
SHF: Small: Collaborative Research: Skyrmion Mediated Energy-efficient VCMA Switching of 2-Terminal p-MTJ Memory
海外基金