Workshop on Future of Semiconductors and Beyond: Devices and Technologies: To Be Held Virtually Feb 8-9, and 17-18, 2021.
半导体及未来的未来研讨会:设备和技术:将于 2021 年 2 月 8 日至 9 日和 17 日至 18 日虚拟举行。
基本信息
- 批准号:2111191
- 负责人:
- 金额:$ 5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2021
- 资助国家:美国
- 起止时间:2021-01-01 至 2021-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Proposal Number: ECCS-2111191Principal Investigator: Kang L. Wang (PI) & Subramanian Iyer (co-PI)Institution: University of California, Los AngelesProposal Title: NSF Workshop on Future of Semiconductor and Beyond: Devices and TechnologiesNon-Technical Abstract:The U.S. created the semiconductor microelectronics industry through transformative innovations in science and engineering over the past century. However, our leadership advantage has severely eroded over the past two decades amid the stiffest global competition never been experienced before. The goal of the proposed “NSF Workshop on Future of Semiconductors and Beyond: Devices & Technologies” is to research and identify the challenges in semiconductor innovation and manufacturing ecosystems, infrastructure, and workforce, which need to be overcome for fostering innovation to create a “new Silicon Valley”, which will ensure the U.S. economic prosperity and national security. Several follow-up workshops on these identified directions will be formulated to detail the strategies. The results will produce a set of recommendations to NSF for supporting the new ecosystems of innovation in research, infrastructures, manufacturing, and education and training in semiconductors; and incubate the entire chain of comprehensive talent necessary from research and development to manufacturing and commercialization. Technical Abstract:The workshop will recommend research strategy to identify and formulate the scientific and technical directions to assure the US leadership in semiconductors. The workshop approach is to include the top leaders of all stakeholders to discuss ideas and formulate strategic directions for innovation in broader areas of semiconductors, including devices, materials, semiconductor technologies and manufacturing, integrated circuits, and systems and architectures, design methodologies and platform, heterogeneous integration, and semiconductor fabrication, metrology and characterization equipment research and development comprising the full chain of innovation in microelectronics. Intellectual merits will include the knowledge learned, vertically, in computing, communications, Artificial Intelligence (AI), Internet of Things (IOT), future manufacturing, and others, as well as, horizontally, in health care, transportations, energy, security, and the industries of future. The knowledge learned will also help the development of the entire future semiconductor sector and will have broader impacts on science and engineering that affect the daily life. This workshop aims to identify the critical strategies to help the U.S. to regain the leadership position in semiconductors, which is vital to the socio-economic prosperity and national security.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
建议编号:ECCS-2111191首席研究员:Kang L.Wang(Pi)和Subramanian Iyer(co-Pi)机构:加州大学洛杉矶分校提案标题:NSF关于半导体及以后的未来:器件和技术非技术摘要:美国在过去一个世纪通过科学和工程方面的变革性创新创造了半导体微电子产业。然而,在过去20年里,在前所未有的最激烈的全球竞争中,我们的领导优势已经严重侵蚀。拟议中的“美国国家科学基金会半导体及以后的未来:器件和放大器技术研讨会”的目标是研究和确定半导体创新和制造生态系统、基础设施和劳动力方面的挑战,这些挑战需要被克服,以促进创新,创造一个“新硅谷”,确保美国的经济繁荣和国家安全。将就这些已确定的方向拟订若干后续讲习班,以详细说明这些战略。研究结果将向NSF提出一系列建议,以支持研究、基础设施、制造以及半导体教育和培训的新生态系统;并孵化从研发到制造和商业化所需的整个综合人才链。技术摘要:研讨会将推荐研究战略,以确定和制定科学和技术方向,以确保美国在半导体领域的领导地位。研讨会的方法是让所有利益攸关方的最高领导人讨论在更广泛的半导体领域创新的想法和制定战略方向,这些领域包括器件、材料、半导体技术和制造、集成电路、系统和架构、设计方法和平台、异质集成以及构成微电子创新全链的半导体制造、计量和表征设备研发。智力优势将包括纵向上在计算、通信、人工智能(AI)、物联网(IOT)、未来制造等领域学到的知识,以及横向上在医疗保健、交通运输、能源、安全和未来产业方面学到的知识。所学到的知识也将有助于整个未来半导体行业的发展,并将对影响日常生活的科学和工程产生更广泛的影响。该研讨会旨在确定帮助美国重新获得半导体领域领导地位的关键战略,半导体领域对社会经济繁荣和国家安全至关重要。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Kang Wang其他文献
Demonstration of Forward Brillouin Gain in a Hybrid Photonic-Phononic Silicon Waveguide
混合光子-声子硅波导中的前向布里渊增益演示
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:7
- 作者:
Kang Wang;Ming Cheng;Haotian Shi;Linfeng Yu;Chukun Huang;Senbiao Qin;Yi Zhang;Li Kai;Junqiang Sun - 通讯作者:
Junqiang Sun
Beach-Chair-Shaped Energy Band Alignment for High-Performance b-CsPbI3 Solar Cells
高性能 b-CsPbI3 太阳能电池的沙滩椅形能带对准
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:8.9
- 作者:
Kang Wang;Qingwen Tian;Guangtao Zhao;Jialun Wen;Jin Huang;Changji Gao;Zhuo Xu;Yucheng Liu;Lei Liang;Lina Meng;Lu Zhang;Zhike Liu;Zhiwen Jin;Selina Olthof;Shengzhong Liu - 通讯作者:
Shengzhong Liu
High Spatial Resolution of Ultrathin Covalent Organic Framework Nanopores for Single-Molecule DNA Sensing
用于单分子 DNA 传感的超薄共价有机框架纳米孔的高空间分辨率
- DOI:
10.1021/acs.analchem.2c01708 - 发表时间:
2022 - 期刊:
- 影响因子:7.4
- 作者:
Xiao-Lei Xing;Zi-Chuan He;Saud Asif Ahmed;Qiaobo Liao;Lin-Ru Guo;Shibin Ren;Kai Xi;Li-Na Ji;Kang Wang;Xing-Hua Xia - 通讯作者:
Xing-Hua Xia
Edge-located Fe-N4 sites on porous Graphene-like nanosheets for boosting CO2 electroreduction
多孔类石墨烯纳米片上位于边缘的 Fe-N4 位点可促进 CO2 电还原
- DOI:
10.1016/j.cej.2021.134269 - 发表时间:
2021-12 - 期刊:
- 影响因子:15.1
- 作者:
Wenping Liu;Kang Wang;Lei Gong;Qianjun Zhi;Rong Jiang;Wenbo Liu;Tingting Sun;Yuexing Zhang;Jianzhuang Jiang - 通讯作者:
Jianzhuang Jiang
Combination therapy of tacrolimus, high doses of glucocorticosteroids, and cyclophosphamide against existing historical treatment for patients in severe conditions of interstitial lung diseases complicated with dermatomyositis
他克莫司、大剂量糖皮质激素和环磷酰胺联合治疗重症间质性肺病并发皮肌炎患者的既往治疗
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:1.6
- 作者:
Lian Li;Mu Li;Yingchun Li;Kang Wang;Shengqian Xu - 通讯作者:
Shengqian Xu
Kang Wang的其他文献
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{{ truncateString('Kang Wang', 18)}}的其他基金
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
- 批准号:
2328974 - 财政年份:2024
- 资助金额:
$ 5万 - 项目类别:
Continuing Grant
NSF Convergence Accelerator Track C: Chiral-Based Quantum Interconnect Technologies (CirquiTs)
NSF 融合加速器轨道 C:基于手性的量子互连技术 (CirquiTs)
- 批准号:
2040737 - 财政年份:2020
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
SHF: Small: Collaborative Research: Skyrmion Mediated Energy-efficient VCMA Switching of 2-Terminal p-MTJ Memory
SHF:小型:合作研究:Skyrmion 介导的 2 端子 p-MTJ 存储器的节能 VCMA 开关
- 批准号:
1909416 - 财政年份:2019
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Ultra-fast energy efficient ferrimagnetic memory
超快节能亚铁磁存储器
- 批准号:
1935362 - 财政年份:2019
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Magnetic Skyrmion for Nonvolatile Low-Power Spin-Orbitronics Applications
用于非易失性低功耗自旋轨道电子学应用的磁性斯格明子
- 批准号:
1611570 - 财政年份:2016
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Ultrafast Magneto-Plasmonic Effects in Ferrimagnetic Nanomaterials
亚铁磁纳米材料中的超快磁等离子体效应
- 批准号:
1411085 - 财政年份:2014
- 资助金额:
$ 5万 - 项目类别:
Continuing Grant
Diluted Magnetic Germanium Nanowire-Based Nonvolatile Transpinor
基于稀磁锗纳米线的非易失性 Transpinor
- 批准号:
1308358 - 财政年份:2013
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Seventh International Nanotechnology Conference on Communication and Cooperation (INC7). To be Held May 16-19, 2011, in Tsukuba, Japan.
第七届国际纳米技术交流与合作会议(INC7)。
- 批准号:
1114792 - 财政年份:2011
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Conference Grant:Attend the Sixth International Nanotechnology Conference on Communication and Cooperation(INC6)to be Held in Grenoble, France, May 17-20, 2010.
会议资助:参加2010年5月17-20日在法国格勒诺布尔举行的第六届国际纳米技术交流与合作会议(INC6)。
- 批准号:
1019028 - 财政年份:2010
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
Conference Grant for the Fifth International Nanotechnology Conference on Communication and Cooperation. To Be Held in Los Angeles, CA, May 18-21, 2009.
第五届国际纳米技术交流与合作会议的会议补助金。
- 批准号:
0920971 - 财政年份:2009
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
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