SBIR Phase I: SiGeC Superlattices with Direct Bandgaps for Light Emission and Absorption at 1.55 Micronn

SBIR 第一阶段：具有直接带隙的 SiGeC 超晶格，用于 1.55 微米的光发射和吸收

• 批准号: 1315902
• 负责人: Carlos Augusto
• 金额: $ 15万
• 依托单位: Quantum Semiconductor LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1315902&HistoricalAwards=false
• 关键词: SBIR; Phase; SiGeC; Superlattices; Direct

This Small Business Innovation Research (SBIR) Phase I will investigate breakthrough concepts to overcome the limitations imposed by the fundamental physical properties of silicon that prevent it from emitting and sensing light in the infrared range of wavelengths used in telecommunications. These limitations are the most important barrier to using light, instead of electrical signals, to transmit information within a CMOS chip, and between CMOS chips. Using optical, rather than electrical, interconnects will increase performance, decrease power dissipation (heat generation), and reduce manufacturing costs. The research objectives are the identification and demonstration of a new silicon-based material, a superlattice incorporating Silicon, Germanium and Carbon atoms, whose optoelectronic properties are comparable to those of III-V semiconductors from which the LASERs and Photo-Detectors currently used in optical communications, are made. The project will begin with theoretical modeling and simulation of several superlattice compositions, in order to identify the one with the most promising properties, which will then be fabricated and characterized, both as a stand-alone film and by incorporation into a basic photo-diode. It is anticipated that a new class of Si-Ge-C superlattice materials will enable high-efficiency silicon-based devices for light-emission and light-sensing in this range of wavelengths.The broader impact/commercial potential of this project will be in the area of Silicon Photonics, which is a core technology with applications to several fields. The most important field is CMOS manufacturing, where silicon photonics can help Moore's Law maintain its trajectory, overcoming the barrier posed by the limitations of electrical interconnects by replacing them with optical interconnects, within a chip and from chip-to-chip. Optical interconnects will increase performance, improve reliability, and lower power dissipation, while reducing manufacturing costs of leading-edge CMOS technology. Other high-volume applications include fiber optics communications for Fiber-To-The-Home (FTTH) by enabling more compact equipment, capable of more functionality at lower cost, and the replacement of legacy electrical connections for Ethernet, HDMI, DisplayPort, and USB, with lower cost optical cables. By extending the functionality of CMOS to handle light efficiently, both emission and absorption across a wide range of wavelengths, new applications will open up for imaging technology and true silicon photonics.

该小型企业创新研究（SBIR）第一阶段将研究突破性概念，以克服硅的基本物理特性所带来的限制，这些限制使其无法发射和感知电信中使用的红外波长范围内的光。这些限制是使用光而不是电信号在CMOS芯片内和CMOS芯片之间传输信息的最重要障碍。使用光学而非电气互连将提高性能、降低功耗（发热）并降低制造成本。研究目标是鉴定和展示一种新的硅基材料，一种包含硅、锗和碳原子的超晶格，其光电性能可与目前用于光通信的激光器和光电探测器的III-V族半导体相媲美。该项目将开始的理论建模和模拟几个超晶格组合物，以确定一个最有前途的性能，然后将被制造和表征，无论是作为一个独立的薄膜，并纳入一个基本的光电二极管。预计新型硅锗碳超晶格材料将使硅基器件在该波长范围内实现高效率的光发射和光传感。该项目的更广泛影响/商业潜力将在硅光子学领域，这是一项应用于多个领域的核心技术。最重要的领域是CMOS制造，其中硅光子学可以帮助摩尔定律保持其轨迹，通过在芯片内和从芯片到芯片的光学互连来取代电互连的限制，克服电互连的限制所带来的障碍。光学互连将提高性能，提高可靠性，降低功耗，同时降低先进CMOS技术的制造成本。其他大批量应用包括光纤到户（FTTH）的光纤通信，实现更紧凑的设备，能够以更低的成本实现更多的功能，以及用更低成本的光缆取代以太网、HDMI、DisplayPort和USB的传统电气连接。通过扩展CMOS的功能以有效地处理光，包括在宽波长范围内的发射和吸收，将为成像技术和真正的硅光子学开辟新的应用。