EAGER: Toward Large Scale Manufacturing and Engineering of Two-Dimensional Electronics

EAGER：迈向二维电子的大规模制造和工程

• 批准号: 1327093
• 负责人: Jun Lou
• 金额: $ 12.94万
• 依托单位: William Marsh Rice University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2015-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1327093&HistoricalAwards=false
• 关键词: EAGER; Toward; Large; Scale; Manufacturing

The objective of this program is to develop a robust and scalable vapor phase based manufacturing and engineering strategy to produce wafer-scale high quality MoS2 atomic layers, a highly promising 2D semiconductor, and their in-plane hybrids with graphene and h-BN towards high performance and extremely compact 2D electronic devices. A systematic quality evaluation procedure including structural, electrical and mechanical characterizations will also be established, followed by detailed device characterizations to provide critical feedbacks for the manufacturing and engineering process. The intellectual merit is to realize the potential of large scale manufacturing and rational engineering of several emerging 2D materials for future 2D electronic device applications. It is very exciting to be able to control the domain shapes and sizes of several in-plane heterostructures through atomic layer engineering. In fact, with the appropriate selection of atomic layers of materials with different electronic properties, entire devices could be engineered and fabricated within a single atomic layer, bringing a completely new dimension to device technologies and representing a truly transformative advancement for future electronics.The broader impacts are promoting interdisciplinary research and educational efforts integration from physics, chemistry and engineering communities in the next decade. Graduate students and/or post-doctoral fellows will be positively impacted as they will be undertaking important research assignments in this project. Cross-boundary educational efforts, due to the nature of this research, would be strongly encouraged to train talents who would contribute to scientific discovery and engineering innovation in this emerging field in US.

该计划的目标是开发一种强大且可扩展的基于气相的制造和工程策略，以生产晶片规模的高质量MoS2原子层，这是一种非常有前途的2D半导体，以及它们与石墨烯和h-BN的平面杂化，以实现高性能和极其紧凑的2D电子器件。还将建立一个系统的质量评估程序，包括结构、电气和机械特性，然后是详细的设备特性，为制造和工程过程提供关键反馈。智能的优点是实现了大规模制造的潜力，并为未来的2D电子设备应用合理地设计了几种新兴的2D材料。通过原子层工程能够控制几种面内异质结构的磁区形状和尺寸，这是非常令人兴奋的。事实上，通过适当选择具有不同电子性能的原子层材料，可以在单个原子层内设计和制造整个器件，为器件技术带来全新的维度，并代表着未来电子学的真正变革性进步。更广泛的影响正在促进未来十年物理、化学和工程界的跨学科研究和教育努力的整合。研究生和/或博士后研究员将受到积极影响，因为他们将在该项目中承担重要的研究任务。由于这项研究的性质，我们将大力鼓励跨境教育努力，以培养对美国这一新兴领域的科学发现和工程创新做出贡献的人才。