课题基金 / 基金详情

SBIR Phase II: Ultra High Efficiency Printable Quantum Dot Light-Emitting Display

SBIR Phase II: Ultra High Efficiency Printable Quantum Dot Light-Emitting Display
SBIR第二阶段:超高效率可印刷量子点发光显示器
批准号:
1353411
负责人:
Paul Holloway
金额:
$74.33万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-04-15 至 2017-03-31

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中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase II project aims to further enhance the efficiency and lifetime of quantum dot light emitting diodes (QD-LEDs) used for displays. An active matrix QD-LED prototype display will be demonstrated using solution processing. The lifetime of QD-LED will be extended by determining degradation mechanisms, and development of new materials, modified device processing and encapsulation techniques. The effects of charge imbalance and light trapping on the efficiency of QD-LED will be determined and optimized. External quantum efficiencies will exceed 18%. Lifetimes of QD-LEDs exceeding 10,000 hours for all three primary colors will be demonstrated, which meets the requirement for mobile display applications.The broader impact/commercial potential of this project will be a demonstration that quantum dot light-emitting diodes (QD-LEDs) have the commercial advantages of high efficiencies and long lifetimes. QD-LED will be welcomed by the display industry which is now desperately searching for next generation technologies. The demonstration of an active matrix QD-LED display prototype with a solution printing process will be a critical step towards the commercialization. The systematic investigation of technical details involved in the printing process of active matrix QD-LEDs will enable the construction of a pilot facility and eventual mass production. The simple architecture and solution fabrication process will provide significant cost advantages over conventional processes.
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Curriculum Development Workshop on Advanced Materials Science & Technology
  • 批准号:
    9454556
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.04万
  • 财政年份:
    1995
  • 负责人:
    Paul Holloway
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Conference on Compound Semiconductor Growth Processing and Sevices for the 1990's Japan/U.S. Perpective August 1987
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    8714650
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    Standard Grant
  • 资助金额:
    $1.57万
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    1987
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Structural and Chemical Modifications of Mineral Surfaces and Interfaces
  • 批准号:
    8217839
  • 项目类别:
    Continuing grant
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    $0.0万
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    1983
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    Paul Holloway
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Engineering Specialized Research Equipment: Secondary Ion Mass Spectrometer
  • 批准号:
    7911365
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1979
  • 负责人:
    Paul Holloway
  • 依托单位:
国内基金
海外基金
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    --
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  • 资助金额:
    3350万元
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  • 负责人:
    刘衍文
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地幔含水相Phase E的温度压力稳定区域与晶体结构研究
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基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究