EAGER: Microstructure of Er optical center in the large-bandgap semiconductor GaN

EAGER：大禁带半导体GaN中Er光学中心的微结构

• 批准号: 1358564
• 负责人: Vinh Nguyen
• 金额: $ 6.2万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1358564&HistoricalAwards=false
• 关键词: EAGER; Microstructure; Er; optical; center

Objective: This research project aims to achieve a greater understanding of erbium optical centers in the wide bandgap semiconductor GaN. The approach utilizes the magneto-optical techniques to study the microscopic structure of these centers.Intellectual Merit: The proposed work involves theoretical and experimental investigations of the microscopic structure of optically active Er centers in GaN will be investigated using magneto-optical measurements. The study will focus on the Zeeman effect on photoluminescence lines associated with erbium centers in GaN as a function of magnetic field strength. Several approaches combining analytical and simulation techniques for the magnetic field-induced splitting of the photoluminescence lines will be utilized. The individual g-tensors of ground and excited states of the erbium optical centers will be determined. The study will focus on the temperature dependence of the intensity ratio of the high and the low energy components at high magnetic fields. The information will provide a detailed description of the microscopic structure of the optical centers.Broader Impact:If successful, the research will lead to a greater understanding of erbium optical centers in GaN semiconductor films. This information is crucial for future photonic/optoelectronic applications, including optical amplifiers, optical communication systems, solid state lighting devices, and quantum information processing systems. The proposed research also impacts training graduate and undergraduate students in interdisciplinary areas of photonics, material science and devices.The research results will be incorporated into courses offered by the PIs in both Optics and Nanoscience programs.

目的：为了更好地理解宽禁带半导体GaN中的Er3+光学中心。该方法利用磁光技术来研究这些中心的微观结构。智力上的优点：拟议的工作包括对GaN中光学活性Er中心的微观结构的理论和实验研究，将使用磁光测量来研究。这项研究将集中在与GaN中Er中心相关的光致发光线上的塞曼效应作为磁场强度的函数。将使用几种结合了分析和模拟技术的方法来实现光致发光线的磁场诱导分裂。将确定Er3+光学中心的基态和激发态的单个g张量。这项研究将集中在强磁场下高、低能分量强度比的温度依赖关系。这些信息将提供光学中心的微观结构的详细描述。广泛的影响：如果成功，这项研究将使人们更好地了解GaN半导体薄膜中的Erb光学中心。这些信息对未来的光子学/光电子学应用至关重要，包括光学放大器、光通信系统、固态照明设备和量子信息处理系统。这项拟议的研究也影响了光子学、材料科学和器件等跨学科领域的研究生和本科生的培训。研究成果将被纳入光学和纳米科学专业的私人投资促进机构提供的课程中。