Electro-Optics of Single-Walled Carbon Nanotube Thin Films: Physics and Applications

单壁碳纳米管薄膜的电光：物理与应用

• 批准号: 1404671
• 负责人: Mikhail Itkis
• 金额: $ 35万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1404671&HistoricalAwards=false
• 关键词: Electro; Optics; Single; Walled; Carbon

Abstract - Electro-Optics of Single-Walled Carbon Nanotube Thin Films: Physics and Applications. NON-TECHNICAL SUMMARYIndividual semiconducting single-walled carbon nanotubes (SC-SWNTs) constitute the ideal field effect transistor as a result of their high mobilities, high current carrying capacity and low intrinsic capacitance. The development of devices based on a channel composed of a single semiconducting single-walled carbon nanotube continues to be an active area of research due to the stringent requirements that this technology places on the material purity of the SC-SWNTs (diameter, chirality and the necessity to exclude metallic SWNTs), and assembly of individual devices into fully wired very large scale integrated (VLSI) circuits. In this respect the SC-SWNT films proposed for study in the present project form a particularly appealing target because such films are readily prepared by simple bench top laboratory techniques that include filtration, spraying, drop-casting and stamping and by careful control of the preparative conditions, readily allow the reproducible fabrication of flexible, transferrable SC-SWNT films with thicknesses that range from 1 to 1000 nm.The present proposal aims to further this thin film technology by extending the outstanding engineering and physical properties of single SC-SWNT devices to chemically engineered SWNT thin films by use of suitably chosen organic dopants and ionic liquids in gated field effect transistor devices. Among the functional optoelectronic components selected for study are electro-optical modulators, photodetectors and light emitters. The experimental observation of the enhanced Franz-Keldysh effect may lead to a new generation of electro-optical modulators capable of operating at high speed, high efficiency and low voltage. The new strategy of p-n junction formation, based on the recent observation of strong internal electric fields in SWNT thin film channels coated with ionic liquids, will be used to enhance the photoconductivity in SWNTs. In past flexible electronics and smart window applications, SWNT thin films were usually explored as passive transparent electrodes; this proposal will explore the feasibility of utilizing SWNT thin films as active electrochromic layers for smart windows and electrically configurable optical media. The proposed work will stimulate the development of a new field of optoelectronics based on SWNT thin films and thin film based flexible electronics which will increase the technological and economic competitiveness of the United States.TECHNICAL SUMMARYIt is proposed to experimentally explore the physics of electro-optical phenomena in films of semiconducting single-walled carbon nanotubes (SC-SWNTs) and their device applications. The SWNT thin films constitute the ideal medium for studying electro-optical phenomena, because they possess the same fundamental physical properties as individual SWNTs, but also allow the application of a variety of characterization techniques and offer the possibility of the development of a new class of SWNT thin film based electro-optical devices. The project focuses on the application of semiconducting SWNTs and the work builds on recent developments in this area such as the SWNT bolometric photodetector, optocoupler, electro-optical modulator and electrically reconfigurable optical media. Proposed new experiments include: (i) the realization of the enhanced Franz-Keldysh effect by the application of strong longitudinal electric fields to films of aligned SWNTs; (ii) the fabrication of SWNT p-n junctions utilizing electrostatic doping induced by an ionic liquid for the development of photodetectors and light emitters; (iii) exploration of the ability of SWNT thin films to function as electrically configurable optical media of spatially modulated infrared transparency and as the active electrochromic layer for smart windows.

摘要-单壁碳纳米管薄膜的电光：物理和应用。 非技术概述单个半导体单壁碳纳米管（SC-SWNT）由于其高迁移率、高载流能力和低固有电容而构成理想的场效应晶体管。 基于由单个半导体单壁碳纳米管组成的通道的器件的开发仍然是研究的活跃领域，这是由于该技术对SC-SWNT的材料纯度（直径、手性和排除金属SWNT的必要性）以及将各个器件组装成完全布线的超大规模集成（VLSI）电路的严格要求。 在这方面，在本项目中提出用于研究的SC-SWNT膜形成了特别吸引人的目标，因为这种膜容易通过简单的实验室技术制备，包括过滤、喷涂、滴铸和冲压，并且通过仔细控制制备条件，容易允许柔性的、可重复的制造。本提案旨在通过扩展单个SC-SWNT的出色工程和物理性质来进一步发展这种薄膜技术。通过在门控场效应晶体管器件中使用适当选择的有机掺杂剂和离子液体，将SWNT器件转化为化学工程化的SWNT薄膜。 选择用于研究的功能性光电子元件包括电光调制器、光探测器和光发射器。增强的Franz-Keldysh效应的实验观察可能导致能够在高速、高效率和低电压下操作的新一代电光调制器。p-n结形成的新策略，基于最近观察到的强内部电场在单壁碳纳米管薄膜通道涂覆有离子液体，将被用来提高在单壁碳纳米管的光电导性。在过去的柔性电子和智能窗应用中，SWNT薄膜通常被探索为被动透明电极;该提议将探索利用SWNT薄膜作为智能窗和电可配置光学介质的主动电致变色层的可行性。 建议的工作将刺激发展的一个新领域的光电子学的基础上单壁碳纳米管薄膜和薄膜为基础的柔性电子，这将增加技术和经济竞争力的美国。技术摘要它建议实验探索的物理电光现象的半导体单壁碳纳米管（SC-SWNTs）和它们的设备应用程序的薄膜。单壁碳纳米管薄膜构成了研究电光现象的理想介质，因为它们具有与单个单壁碳纳米管相同的基本物理性质，而且还允许应用各种表征技术，并提供了开发一类新的基于单壁碳纳米管薄膜的电光器件的可能性。该项目的重点是半导体单壁碳纳米管的应用和工作建立在这一领域的最新发展，如单壁碳纳米管测辐射热光电探测器，光耦合器，电光调制器和电可重构光学介质。拟议的新实验包括：（i）通过对取向的SWNT的膜施加强纵向电场来实现增强的Franz-Keldysh效应;（ii）利用由离子液体诱导的静电掺杂来制造SWNT p-n结，用于开发光电检测器和光发射器;（三）探索SWNT薄膜作为空间调制红外透明性的电可配置光学介质和作为用于智能窗户的有源电致变色层。