Theoretical Foundations of Advanced III-Nitrides Power Switching Devices

该研究解决了对各种类型的III族氮化物功率开关的基本理解和优化，例如具有直接环境影响的超级结结构。这项工作在智能电网，交通系统和小型和大型车辆的电力驱动方面具有重要应用。PI计划将他的研究整合到电力电子课程中，该课程将解决具有新功能的新型功率器件。该研究将提供一个非常强大的教育平台，以培养前沿研究课题的研究生，并积极参与工业合作。对高中和本科生的推广活动包括波士顿大学高中荣誉研究实习和UROP计划。PI建议通过解决与材料特性和器件结构相关的基本理论问题，为设计和优化基于III-氮化物的功率开关器件进行系统的方法。用这种材料制成的垂直器件在高电压和高电流下工作的特性将得到解决，与传统使用的器件相比，同时允许更高的工作频率，从而显著减小系统尺寸。 PI建议通过解决与III族氮化物材料特性和器件结构相关的基本理论问题以及开发变革性垂直器件结构（如GaN-MOS和垂直增强模式HFET）来解决在100 kHz或更快的频率下超过5 KV和数百安培的开关电压需求所面临的挑战。将利用通过与该领域专门实验室合作获得的实验数据来验证研究结果。这项研究构思良好，将加深对三族氮化物MOS器件物理特性的基本理解，以及缺陷和位错的影响，以及沟道输运。

The research addresses the basic understanding and optimization of various types of III-Nitride power switches such as SuperJunction structures with immediate environmental impact. This work has important applications in smart power grids, transportation systems, and electric drives for small and large vehicles. The PI plans to integrate his research in a power electronics curriculum that will address novel power devices with new functionalities. The research will provide a very strong educational platform to train graduate students in a frontier research topic, with active collaborative industrial participation. The outreach activities to high-school and undergraduate students include the Boston University High School Honors Research Internship and UROP programs.The PI proposes to conduct a systematic approach for designing and optimizing III-Nitride based power switching devices by addressing fundamental theoretical aspects related to material properties and device structures. The characteristics of vertical devices made with such materials and operating at high-voltage and high-current will be addressed, allowing at the same time higher frequency of operation compared with traditionally used devices and thus significant system size reduction. The PI proposes to address the challenges faced by the need for switching voltages in excess of 5KV and hundreds of amperes at one hundred kilohertz or faster by addressing the fundamental theoretical aspects related to the III-Nitride material properties and device structures and developing transformative vertical device structures such as GaN-MOS and vertical enhancement mode HFETs. The results obtained from the studies will be validated using experimental data obtained through collaboration with laboratories specializing in this area. The research is well conceived and would deepen fundamental understanding of the physics of III-Nitride MOS devices and impact of defects and dislocations, as well as channel transport.