Theoretical Foundations of Advanced III-Nitrides Power Switching Devices

先进III族氮化物功率开关器件的理论基础

基本信息

  • 批准号:
    1407992
  • 负责人:
  • 金额:
    $ 33.69万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-07-01 至 2018-06-30
  • 项目状态:
    已结题

项目摘要

The research addresses the basic understanding and optimization of various types of III-Nitride power switches such as SuperJunction structures with immediate environmental impact. This work has important applications in smart power grids, transportation systems, and electric drives for small and large vehicles. The PI plans to integrate his research in a power electronics curriculum that will address novel power devices with new functionalities. The research will provide a very strong educational platform to train graduate students in a frontier research topic, with active collaborative industrial participation. The outreach activities to high-school and undergraduate students include the Boston University High School Honors Research Internship and UROP programs.The PI proposes to conduct a systematic approach for designing and optimizing III-Nitride based power switching devices by addressing fundamental theoretical aspects related to material properties and device structures. The characteristics of vertical devices made with such materials and operating at high-voltage and high-current will be addressed, allowing at the same time higher frequency of operation compared with traditionally used devices and thus significant system size reduction. The PI proposes to address the challenges faced by the need for switching voltages in excess of 5KV and hundreds of amperes at one hundred kilohertz or faster by addressing the fundamental theoretical aspects related to the III-Nitride material properties and device structures and developing transformative vertical device structures such as GaN-MOS and vertical enhancement mode HFETs. The results obtained from the studies will be validated using experimental data obtained through collaboration with laboratories specializing in this area. The research is well conceived and would deepen fundamental understanding of the physics of III-Nitride MOS devices and impact of defects and dislocations, as well as channel transport.
该研究解决了对各种类型的III族氮化物功率开关的基本理解和优化,例如具有直接环境影响的超级结结构。这项工作在智能电网,交通系统和小型和大型车辆的电力驱动方面具有重要应用。PI计划将他的研究整合到电力电子课程中,该课程将解决具有新功能的新型功率器件。该研究将提供一个非常强大的教育平台,以培养前沿研究课题的研究生,并积极参与工业合作。对高中和本科生的推广活动包括波士顿大学高中荣誉研究实习和UROP计划。PI建议通过解决与材料特性和器件结构相关的基本理论问题,为设计和优化基于III-氮化物的功率开关器件进行系统的方法。用这种材料制成的垂直器件在高电压和高电流下工作的特性将得到解决,与传统使用的器件相比,同时允许更高的工作频率,从而显著减小系统尺寸。 PI建议通过解决与III族氮化物材料特性和器件结构相关的基本理论问题以及开发变革性垂直器件结构(如GaN-MOS和垂直增强模式HFET)来解决在100 kHz或更快的频率下超过5 KV和数百安培的开关电压需求所面临的挑战。将利用通过与该领域专门实验室合作获得的实验数据来验证研究结果。这项研究构思良好,将加深对三族氮化物MOS器件物理特性的基本理解,以及缺陷和位错的影响,以及沟道输运。

项目成果

期刊论文数量(0)
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会议论文数量(0)
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Enrico Bellotti其他文献

Quantum transport simulation of a mid-wave infrared Ga-based type-II superlattice for curved focal-plane arrays
弯曲焦平面阵列中波红外镓基II型超晶格的量子输运模拟
  • DOI:
    10.1117/12.2682192
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Glennon;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
Calculation of Auger Lifetimes in HgCdTe
  • DOI:
    10.1007/s11664-011-1638-5
  • 发表时间:
    2011-04-23
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Francesco Bertazzi;Michele Goano;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
NEGF Modeling of Carrier Transport in Antimonide-based Type-II Superlattice Absorbers
基于锑化物的 II 型超晶格吸收器中载流子传输的 NEGF 建模
A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current
  • DOI:
    10.1007/s11664-016-4476-7
  • 发表时间:
    2016-04-08
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Benjamin Pinkie;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
Numerical Simulation of InAs nBn Back-Illuminated Detectors
  • DOI:
    10.1007/s11664-012-2168-5
  • 发表时间:
    2012-07-03
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Jonathan Schuster;Craig A. Keasler;Marion Reine;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti

Enrico Bellotti的其他文献

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{{ truncateString('Enrico Bellotti', 18)}}的其他基金

Workshop on Electronics, Photonics and Magnetics (EPM) - Network for Computational Nanotechnology (NCN), To Be Held October 11-12, 2018, Alexandria,VA
电子、光子学和磁学研讨会 (EPM) - 计算纳米技术网络 (NCN),将于 2018 年 10 月 11-12 日在弗吉尼亚州亚历山大举行
  • 批准号:
    1851363
  • 财政年份:
    2018
  • 资助金额:
    $ 33.69万
  • 项目类别:
    Standard Grant
2016 NSF-AFOSR-ARO-DTRA Workshop on Reproducible Advanced Technologies for Next-Generation Nano/Quantum Devices
2016 NSF-AFOSR-ARO-DTRA 下一代纳米/量子器件可重复先进技术研讨会
  • 批准号:
    1642431
  • 财政年份:
    2016
  • 资助金额:
    $ 33.69万
  • 项目类别:
    Standard Grant
Theoretical Investigation of Optoelectronic Devices Based on the ZnO Material System
基于ZnO材料体系的光电器件的理论研究
  • 批准号:
    0901435
  • 财政年份:
    2009
  • 资助金额:
    $ 33.69万
  • 项目类别:
    Standard Grant
CAREER: Theoretical Investigation of Single Photon Detectors for Quantum Technology: A Nano-structure Devices Approach
职业:量子技术单光子探测器的理论研究:纳米结构器件方法
  • 批准号:
    0449232
  • 财政年份:
    2005
  • 资助金额:
    $ 33.69万
  • 项目类别:
    Standard Grant

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