Theoretical Foundations of Advanced III-Nitrides Power Switching Devices

先进III族氮化物功率开关器件的理论基础

• 批准号: 1407992
• 负责人: Enrico Bellotti
• 金额: $ 33.69万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1407992&HistoricalAwards=false
• 关键词: Theoretical; Foundations; Advanced; III; Nitrides

The research addresses the basic understanding and optimization of various types of III-Nitride power switches such as SuperJunction structures with immediate environmental impact. This work has important applications in smart power grids, transportation systems, and electric drives for small and large vehicles. The PI plans to integrate his research in a power electronics curriculum that will address novel power devices with new functionalities. The research will provide a very strong educational platform to train graduate students in a frontier research topic, with active collaborative industrial participation. The outreach activities to high-school and undergraduate students include the Boston University High School Honors Research Internship and UROP programs.The PI proposes to conduct a systematic approach for designing and optimizing III-Nitride based power switching devices by addressing fundamental theoretical aspects related to material properties and device structures. The characteristics of vertical devices made with such materials and operating at high-voltage and high-current will be addressed, allowing at the same time higher frequency of operation compared with traditionally used devices and thus significant system size reduction. The PI proposes to address the challenges faced by the need for switching voltages in excess of 5KV and hundreds of amperes at one hundred kilohertz or faster by addressing the fundamental theoretical aspects related to the III-Nitride material properties and device structures and developing transformative vertical device structures such as GaN-MOS and vertical enhancement mode HFETs. The results obtained from the studies will be validated using experimental data obtained through collaboration with laboratories specializing in this area. The research is well conceived and would deepen fundamental understanding of the physics of III-Nitride MOS devices and impact of defects and dislocations, as well as channel transport.

该研究探讨了各种类型的III氮化物功率开关的基本理解和优化，例如具有立即影响环境影响的超口连结构。这项工作在小型和大型车辆的智能电网，运输系统和电动驱动器中具有重要的应用。 PI计划将他的研究集成到Power Electronics课程中，该课程将对具有新功能的新型功率设备进行介绍。这项研究将提供一个非常强大的教育平台，通过积极的协作工业参与来培训研究生的研究生。向高中和本科生的外展活动包括波士顿大学高中荣誉研究实习和UROP计划。PI提议通过解决与材料属性和设备结构相关的基本理论方面来设计和优化基于III氮化物的电力开关设备的系统方法。将解决用这种材料制造并在高压和高电流下运行的垂直设备的特性，同时与传统使用的设备相比，操作频率更高，从而大大减少了系统尺寸。 PI建议通过解决与III氮化物材料材料和设备结构相关的基本理论方面以及开发诸如GAN-MOS和VARTICTIC ENTICTIC ENTICTIC ENTICLECTION MODENT模式HFETS等基本理论方面，以应对一百千霍兹的电压所面临的挑战或更快的速度或更快的安培所面临的挑战。从研究获得的结果将通过与专门研究该领域的实验室合作获得的实验数据进行验证。这项研究是构思良好的，将加深对III氮化物MOS设备物理学以及缺陷和位错的影响以及通道运输的基本了解。