Theoretical Investigation of Optoelectronic Devices Based on the ZnO Material System

基于ZnO材料体系的光电器件的理论研究

基本信息

  • 批准号:
    0901435
  • 负责人:
  • 金额:
    $ 31.14万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-06-01 至 2013-05-31
  • 项目状态:
    已结题

项目摘要

Objectives - The objectives of this effort are to:− Develop a comprehensive numerical simulation model for the ZnO material system to be used for the design and optimization of electronics, optoelectronics and nano-mechanical devices.− Design and assess the performance of technologically relevant optoelectronics and photonics devices, in particular light emitters, where the use of the ZnO material system can radically transform the design process, device structure and performance.− Exploit the opportunities provided by the nanostructures unique to this system to investigate novel optoelectronics, photonics and nano-mechanical devices, in particular, sensors.Intellectual Merit − The intellectual merit of this effort is the enhancement of the modeling of ZnO and its compounds by laying the foundation for a comprehensive understanding of the physics of this semiconductor material system and providing state of the art numerical simulation techniques for device design and optimization. The prediction of material and device properties of other semiconductors using first principles numerical simulations will also be significantly improved. Broader impact − The broader impacts of this program could include transforming the design and fabrication of ZnO based UV emitters, making them very efficient and low cost. The efficiency of white light emitters for solid state lighting would also significantly increase. The nanostructures unique to this material system could make it possible to design light emitters and sensors where mechanical, optical and electrical functions are integrated in the same device. These new applications could have a significant impact on energy management, bioengineering and environmental monitoring with important societal benefits.
目标-这项工作的目标是:开发用于电子学、光电子学和纳米机械设备的设计和优化的全面的氧化锌材料系统的数值模拟模型。设计和评估技术上相关的光电子学和光电子学器件的性能,特别是发光器,其中使用氧化锌材料系统可以从根本上改变设计过程、器件结构和性能。利用该系统独特的纳米结构提供的机会来研究新的光电子学、光电子学和纳米机械器件,特别是传感器。这项工作的智能价值在于,通过为全面理解这一半导体材料系统的物理奠定了基础,并为器件设计和优化提供了最先进的数值模拟技术,从而增强了对氧化锌及其化合物的建模。使用第一性原理数值模拟对其他半导体材料和器件性能的预测也将得到显着改进。更广泛的影响&该计划的更广泛的影响可能包括改变基于氧化锌的紫外线发射器的设计和制造,使其非常高效和低成本。用于固态照明的白光发射器的效率也将显著提高。这种材料系统特有的纳米结构使设计光发射器和传感器成为可能,在同一设备中集成了机械、光学和电气功能。这些新的应用可能会对能源管理、生物工程和环境监测产生重大影响,产生重要的社会效益。

项目成果

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Enrico Bellotti其他文献

Quantum transport simulation of a mid-wave infrared Ga-based type-II superlattice for curved focal-plane arrays
弯曲焦平面阵列中波红外镓基II型超晶格的量子输运模拟
  • DOI:
    10.1117/12.2682192
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Glennon;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
Calculation of Auger Lifetimes in HgCdTe
  • DOI:
    10.1007/s11664-011-1638-5
  • 发表时间:
    2011-04-23
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Francesco Bertazzi;Michele Goano;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
NEGF Modeling of Carrier Transport in Antimonide-based Type-II Superlattice Absorbers
基于锑化物的 II 型超晶格吸收器中载流子传输的 NEGF 建模
A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current
  • DOI:
    10.1007/s11664-016-4476-7
  • 发表时间:
    2016-04-08
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Benjamin Pinkie;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti
Numerical Simulation of InAs nBn Back-Illuminated Detectors
  • DOI:
    10.1007/s11664-012-2168-5
  • 发表时间:
    2012-07-03
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Jonathan Schuster;Craig A. Keasler;Marion Reine;Enrico Bellotti
  • 通讯作者:
    Enrico Bellotti

Enrico Bellotti的其他文献

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{{ truncateString('Enrico Bellotti', 18)}}的其他基金

Workshop on Electronics, Photonics and Magnetics (EPM) - Network for Computational Nanotechnology (NCN), To Be Held October 11-12, 2018, Alexandria,VA
电子、光子学和磁学研讨会 (EPM) - 计算纳米技术网络 (NCN),将于 2018 年 10 月 11-12 日在弗吉尼亚州亚历山大举行
  • 批准号:
    1851363
  • 财政年份:
    2018
  • 资助金额:
    $ 31.14万
  • 项目类别:
    Standard Grant
2016 NSF-AFOSR-ARO-DTRA Workshop on Reproducible Advanced Technologies for Next-Generation Nano/Quantum Devices
2016 NSF-AFOSR-ARO-DTRA 下一代纳米/量子器件可重复先进技术研讨会
  • 批准号:
    1642431
  • 财政年份:
    2016
  • 资助金额:
    $ 31.14万
  • 项目类别:
    Standard Grant
Theoretical Foundations of Advanced III-Nitrides Power Switching Devices
先进III族氮化物功率开关器件的理论基础
  • 批准号:
    1407992
  • 财政年份:
    2014
  • 资助金额:
    $ 31.14万
  • 项目类别:
    Standard Grant
CAREER: Theoretical Investigation of Single Photon Detectors for Quantum Technology: A Nano-structure Devices Approach
职业:量子技术单光子探测器的理论研究:纳米结构器件方法
  • 批准号:
    0449232
  • 财政年份:
    2005
  • 资助金额:
    $ 31.14万
  • 项目类别:
    Standard Grant

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