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Supported Solid and Liquid Metal Films for Growth of Single-Layer Graphene and Boron Nitride Lateral Heterostructures.

用于生长单层石墨烯和氮化硼横向异质结构的支撑固体和液体金属薄膜。

基本信息

批准号：
1409280
负责人：
Jeff Drucker
金额：
$ 39万
依托单位：
Arizona State University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2014
资助国家：
美国
起止时间：
2014-07-01 至 2019-06-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1409280&HistoricalAwards=false
关键词：
Supported Solid Liquid Metal Films

项目摘要

Non-technical Description: This project investigates the growth of graphene and hexagonal boron nitride (h-BN), as well as their heterostructures in the lateral directions, on thin metal films. Both of these two-dimensional materials are one-atom-thick crystals with their atoms arranged in a honeycomb structure. They have novel electronic, photonic and magnetic properties that can be exploited in next-generation technologies. The size and shape of individual graphene and h-BN crystallites are manipulated through variations in growth conditions to achieve desired properties for specific applications. Using the edges of existing crystallites as one-dimensional substrates for lateral growth of the other material enables formation of a wide variety of laterally heterostructured films including interleaved arrays of graphene and h-BN nanowires and graphene quantum dots in a h-BN matrix. This project trains one PhD student in fabrication and characterization of these unique materials. The principal investigator is collaborating with the "Science is Fun" program at Arizona State University to develop age-appropriate curriculum modules for Phoenix area K-12 students.Technical Description: This project employs cold-wall chemical vapor deposition (CVD) to grow single-layer monocrystalline graphene and hexagonal boron nitride (h-BN) lateral heterostructures onto thin metal films. The size and shape of isolated graphene and h-BN crystallites are tuned in order to use their perimeters as substrates for lateral heteroepitaxy of the other material. The research develops a capability that enables engineering of single-layer graphene/h-BN nanocomposites with controlled shapes, sizes and interface structure (i.e., zigzag or armchair) and with desirable properties. Graphene and h-BN are grown atop thin metal films deposited on refractory metal supports that are heated to temperatures both below and above the metal-film's melting temperature to assess the efficacy of CVD onto liquid metals for growth of the target structures. A variety of thin metal and alloy films are investigated to assess their effects on graphene, h-BN and heterostructure morphology. Real-time imaging during the growth in an environmental scanning electron microscope elucidates growth mechanisms. In combination with systematic investigation of films and heterostructures grown using cold-wall CVD, a comprehensive understanding of the fundamental science underpinning graphene, h-BN and heterostructure growth on both solid and liquid metal films is developed. Films and heterostructures are also characterized at the atomic level using aberration-corrected (scanning) transmission electron microscopy.

非技术描述：该项目研究石墨烯和六方氮化硼 (h-BN) 的生长，以及它们在金属薄膜上的横向异质结构。这两种二维材料都是单原子厚度的晶体，其原子排列成蜂窝结构。它们具有新颖的电子、光子和磁性特性，可用于下一代技术。通过改变生长条件来控制单个石墨烯和六方氮化硼微晶的尺寸和形状，以实现特定应用所需的性能。使用现有微晶的边缘作为其他材料横向生长的一维基底，可以形成各种横向异质结构薄膜，包括石墨烯和 h-BN 纳米线的交错阵列以及 h-BN 矩阵中的石墨烯量子点。该项目培训一名博士生如何制造和表征这些独特材料。首席研究员正在与亚利桑那州立大学的“科学有趣”项目合作，为菲尼克斯地区 K-12 学生开发适合年龄的课程模块。技术描述：该项目采用冷壁化学气相沉积 (CVD) 在金属薄膜上生长单层单晶石墨烯和六方氮化硼 (h-BN) 横向异质结构。分离的石墨烯和 h-BN 微晶的尺寸和形状经过调整，以便使用它们的周边作为其他材料横向异质外延的基板。该研究开发了一种能力，能够设计出具有受控形状、尺寸和界面结构（即锯齿形或扶手椅形）并具有理想性能的单层石墨烯/六方氮化硼纳米复合材料。石墨烯和 h-BN 生长在沉积在难熔金属支架上的薄金属薄膜上，这些金属支架被加热到低于和高于金属薄膜熔化温度的温度，以评估 CVD 在液态金属上生长目标结构的效果。研究了各种金属和合金薄膜，以评估它们对石墨烯、h-BN 和异质结构形态的影响。在环境扫描电子显微镜中生长过程中的实时成像阐明了生长机制。结合对使用冷壁 CVD 生长的薄膜和异质结构的系统研究，对支撑石墨烯、h-BN 以及固态和液态金属薄膜上异质结构生长的基础科学有了全面的了解。还使用像差校正（扫描）透射电子显微镜在原子水平上表征薄膜和异质结构。