SNM: Three-Color Photolithography for Scalable, Large-Area, Low-Cost Nanomanufacturing

SNM：用于可扩展、大面积、低成本纳米制造的三色光刻

• 批准号: 1449309
• 负责人: John Fourkas
• 金额: $ 150万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1449309&HistoricalAwards=false
• 关键词: SNM; Three; Color; Photolithography; Scalable

The ability to create devices with finer features over larger areas is crucial to technological innovation in both mature and emerging industries. In the semiconductor industry, progress in increasing circuit density has been maintained by using light of ever shorter wavelengths to produce circuit patterns, but this method is expensive and further improvements are nearing their limit. This Scalable NanoManufacturing (SNM) project will use three beams of visible light of different wavelengths to produce nanoscale features with the improved resolution required to produce high density integrated circuits. Because visible light is inexpensive to produce, propagate and manipulate, the method promises to lower the cost of cutting-edge nanomanufacturing by a factor of 10 or more. The project team will collaborate with major industrial developers and end-users to transfer the technology to practice, providing a major boost to American competitiveness in scalable nanomanufacturing. The ever more compact and powerful devices that this technology will produce have the potential to impact virtually every imaginable aspect of technology and every member of our society.The project team has researched and proven 2-color approaches to photolithography that have made possible the creation of high-resolution features using visible light. The basis of these techniques is that one color of light is used to initiate chemistry and a second color is used to inhibit it. However, these methods are not yet capable of producing the resolution needed to satisfy the requirements of the next node of the Semiconductor Roadmap. The stumbling block for 2-color approaches has been that initiation of chemistry competes with deactivation. The proposed 3-color approaches circumvent this problem. One color of light pre-activates chemistry, a second color of light deactivates the molecules, and a third color of light transforms pre-activated molecules into activated molecules that then undergo chemistry. This approach provides a viable path to attaining sub-20-nm resolution for scalable nanomanufacturing in 2 and 3 dimensions. The project team combines expertise in photolithography, photochemistry, spectroscopy and pattern transfer to realize this vision. The team will work closely with industrial collaborators who have expertise in commercial photoresists, photolithographic tool components and photolithographic simulation methods to ensure that the research methods and materials used are compatible with the needs and processes of the semiconductor industry and other consumer product industries.

在更大的区域内创建具有更精细功能的设备的能力对于成熟和新兴行业的技术创新至关重要。在半导体工业中，通过使用更短波长的光来产生电路图案，在增加电路密度方面一直保持着进步，但是这种方法是昂贵的，并且进一步的改进接近其极限。 这个可扩展的纳米制造（SNM）项目将使用三束不同波长的可见光来生产纳米级特征，并提高生产高密度集成电路所需的分辨率。由于可见光的产生、传播和操纵成本低廉，该方法有望将尖端纳米制造的成本降低10倍或更多。该项目团队将与主要的工业开发商和最终用户合作，将技术转化为实践，为美国在可扩展纳米制造领域的竞争力提供重大推动。这项技术将生产出更加紧凑和强大的设备，有可能影响技术的几乎每一个方面和我们社会的每一个成员。项目团队已经研究并证明了双色光刻方法，这些方法使得使用可见光创建高分辨率特征成为可能。这些技术的基础是使用一种颜色的光来引发化学反应，使用第二种颜色的光来抑制化学反应。然而，这些方法还不能产生满足半导体路线图下一个节点要求所需的分辨率。双色方法的绊脚石是化学引发与失活竞争。所提出的三色方法避免了这个问题。一种颜色的光预激活化学反应，第二种颜色的光使分子失活，第三种颜色的光将预激活的分子转化为激活的分子，然后进行化学反应。这种方法提供了一种可行的途径，以达到亚20纳米分辨率的可扩展的纳米制造在2和3维。项目团队结合了光刻、光化学、光谱学和图案转移方面的专业知识来实现这一愿景。该团队将与在商业光刻胶、光刻胶工具组件和光刻胶模拟方法方面具有专业知识的工业合作者密切合作，以确保所使用的研究方法和材料与半导体行业和其他消费品行业的需求和工艺兼容。

项目成果

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

氟碳等离子体曝光下光刻胶层结构和表面形貌的演变

• DOI: 10.1002/ppap.201900026
• 发表时间: 2019
• 期刊: Plasma Processes and Polymers
• 影响因子: 3.5
• 作者: Pranda, Adam;Gutierrez Razo, Sandra A.;Fourkas, John T.;Oehrlein, Gottlieb S.
• 通讯作者: Oehrlein, Gottlieb S.

Validation of etching model of polypropylene layers exposed to argon plasmas

暴露于氩等离子体的聚丙烯层蚀刻模型的验证

• DOI: 10.1002/ppap.201900019
• 发表时间: 2019
• 期刊: Plasma Processes and Polymers
• 影响因子: 3.5
• 作者: Corbella, Carles;Pranda, Adam;Portal, Sabine;de los Arcos, Teresa;Grundmeier, Guido;Oehrlein, Gottlieb S.;von Keudell, Achim
• 通讯作者: von Keudell, Achim