Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)

合作研究:规划资助:I/UCRC 下一代纳米材料和器件工程 (NGeNE)

基本信息

项目摘要

The mission of the proposed Next Generation Nanomaterial and Device Engineering (NGeNE) center is to develop a science, engineering, and technology base for the rational design of next generation computers, starting from their underlying material embodiments and fundamental physical principles. To build a chip for information processing, we must explore nanoscale logic and memory, photonics for high speed on-chip communication and thermal engineering to handle energy dissipation in 3D. The NGeNE center will address all these components, along with computational modeling, scientific training and education. Various industrial sectors such as the semiconductor chip industry, optoelectronics, mobile and wireless technology, energy, photonics, chemical, biological and packaging industry, as well as the civilian and defense infrastructure, healthcare and the energy sector will directly benefit from this effort. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.The proposed center for Next Generation Nanomaterial and Device Engineering (NGeNE) aims to form a University-Industry-Government (UIG) nexus towards the design and engineering of next generation nanomaterials and devices with an emphasis on post-CMOS computing. This will rest on four pillars: Nanoelectronics and NanoMagnetism for Logic and Memory (Computation), Thermal for power management, and Photonics for on chip communication. The research thrusts span a large phase space from novel switching schemes to non-Boolean logic, beyond silicon to advanced magnetic, thermal and photonic materials. They combine physical models with computational software, compact models and architecture, heterogeneous growth and integration, nanofabrication, characterization, testing and reliability. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.
拟建的下一代纳米材料与器件工程(NGeNE)中心的使命是从底层材料和基本物理原理出发,为下一代计算机的合理设计开发科学、工程和技术基础。为了构建一个用于信息处理的芯片,我们必须探索纳米级逻辑和存储,高速片上通信的光子学和处理三维能量耗散的热工程。NGeNE中心将处理所有这些组成部分,以及计算建模、科学培训和教育。半导体芯片工业、光电子、移动和无线技术、能源、光电子、化学、生物和包装工业等各个工业部门以及民用和国防基础设施、医疗保健和能源部门将直接受益于这一努力。该中心的目标将是:(a)在新兴纳米技术方面形成一个关键的大学-产业-政府关系,(b)利用最先进的新兴纳米材料和器件的建模、仿真、生长、表征、制造和集成来开展与行业相关的研究,(c)通过利用多所大学的智力资源为工业和国家实验室提供具有成本效益的创新解决方案,从而为他们当前的问题提供竞争优势。(d)开发配套课程,创建数据库,并对学生和行业附属机构进行工具和知识基础设施培训,以满足其未来的劳动力需求。新一代纳米材料和器件工程中心(NGeNE)旨在建立一个大学-工业-政府(UIG)的联系,以设计和工程下一代纳米材料和器件,重点是后cmos计算。这将基于四个支柱:用于逻辑和存储(计算)的纳米电子学和纳米磁学,用于电源管理的热学,以及用于片上通信的光子学。研究的重点跨越了很大的相空间,从新颖的开关方案到非布尔逻辑,从硅到先进的磁性、热和光子材料。他们将物理模型与计算软件、紧凑模型和架构、异质生长和集成、纳米制造、表征、测试和可靠性相结合。该中心的目标将是:(a)在新兴纳米技术方面形成一个关键的大学-产业-政府关系,(b)利用最先进的新兴纳米材料和器件的建模、仿真、生长、表征、制造和集成来开展与行业相关的研究,(c)通过利用多所大学的智力资源为工业和国家实验室提供具有成本效益的创新解决方案,从而为他们当前的问题提供竞争优势。(d)开发配套课程,创建数据库,并对学生和行业附属机构进行工具和知识基础设施培训,以满足其未来的劳动力需求。

项目成果

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Roman Engel-Herbert其他文献

The ReaxFF reactive force-field: development, applications and future directions
ReaxFF 反应力场:发展、应用和未来方向
  • DOI:
    10.1038/npjcompumats.2015.11
  • 发表时间:
    2016-03-04
  • 期刊:
  • 影响因子:
    11.900
  • 作者:
    Thomas P Senftle;Sungwook Hong;Md Mahbubul Islam;Sudhir B Kylasa;Yuanxia Zheng;Yun Kyung Shin;Chad Junkermeier;Roman Engel-Herbert;Michael J Janik;Hasan Metin Aktulga;Toon Verstraelen;Ananth Grama;Adri C T van Duin
  • 通讯作者:
    Adri C T van Duin
Creative tension in layered crystals
层状晶体中的创造性张力
  • DOI:
    10.1038/nmat4662
  • 发表时间:
    2016-06-13
  • 期刊:
  • 影响因子:
    38.500
  • 作者:
    Venkatraman Gopalan;Roman Engel-Herbert
  • 通讯作者:
    Roman Engel-Herbert
Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B
通过分子束外延在 GaAs(111)B 上生长的 InSe 薄膜中混合多型/多晶型的形成
  • DOI:
    10.1038/s41699-025-00535-7
  • 发表时间:
    2025-02-24
  • 期刊:
  • 影响因子:
    8.800
  • 作者:
    Maria Hilse;Justin Rodriguez;Jennifer Gray;Jinyuan Yao;Shaoqing Ding;Derrick Shao Heng Liu;Mo Li;Joshua Young;Ying Liu;Roman Engel-Herbert
  • 通讯作者:
    Roman Engel-Herbert
Microstructure of epitaxial rutile TiO<sub>2</sub> films grown by molecular beam epitaxy on <em>r</em>-plane Al<sub>2</sub>O<sub>3</sub>
  • DOI:
    10.1016/j.jcrysgro.2009.10.005
  • 发表时间:
    2009-12-15
  • 期刊:
  • 影响因子:
  • 作者:
    Roman Engel-Herbert;Bharat Jalan;Joël Cagnon;Susanne Stemmer
  • 通讯作者:
    Susanne Stemmer

Roman Engel-Herbert的其他文献

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{{ truncateString('Roman Engel-Herbert', 18)}}的其他基金

CAREER: Tuning Electronic Phases in Layered Complex Oxides
职业:调整层状复合氧化物中的电子相位
  • 批准号:
    1352502
  • 财政年份:
    2014
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Continuing Grant

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Cell Research
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Cell Research
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    2010
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Cell Research (细胞研究)
  • 批准号:
    30824808
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    2008
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    24.0 万元
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    专项基金项目
Research on the Rapid Growth Mechanism of KDP Crystal
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    10774081
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    2007
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  • 项目类别:
    面上项目

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