Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)
Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)
批准号:
1464633
负责人:
Roman Engel-Herbert
金额:
$1.15万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-04-15 至 2017-03-31
中文摘要
拟议中的下一代纳米材料和器件工程(NGeNE)中心的使命是为下一代计算机的合理设计开发一个科学,工程和技术基础,从它们的基本材料实施方案和基本物理原理开始。为了构建用于信息处理的芯片,我们必须探索纳米级逻辑和存储器,用于高速片上通信的光子学以及用于处理3D能量耗散的热工程。NGeNE中心将解决所有这些组成部分,沿着计算建模,科学培训和教育。各种工业部门,如半导体芯片行业,光电子,移动的和无线技术,能源,光子学,化学,生物和包装行业,以及民用和国防基础设施,医疗保健和能源部门将直接受益于这一努力。该中心的目标将是(a)形成一个关键的大学产业政府对新兴纳米技术的联系,(B)开展行业相关的研究,使用最先进的建模,模拟,生长,表征,制造和新兴纳米材料和设备的集成,(c)通过利用多方面的优势,为工业和国家实验室提供竞争优势,大学的智力资源,以成本效益高的创新办法解决其目前的问题,以及(d)制定支持课程,创建数据库,并利用工具和知识基础设施培训学生和行业分支机构,以满足他们未来的劳动力需求。下一代纳米材料和器件工程(NGeNE)旨在形成一个大学-工业-政府(UIG)关系,以下一代纳米材料和器件的设计和工程为重点,重点是后CMOS计算。这将取决于四个支柱:用于逻辑和存储器(计算)的纳米电子学和纳米磁性,用于电源管理的热,以及用于片上通信的光子学。研究重点跨越了从新颖的开关方案到非布尔逻辑的大相空间,超越了硅到先进的磁性,热和光子材料。 它们将联合收割机物理模型与计算软件、紧凑模型和架构、异构增长和集成、纳米制造、表征、测试和可靠性相结合。该中心的目标将是(a)形成一个关键的大学产业政府对新兴纳米技术的联系,(B)开展行业相关的研究,使用最先进的建模,模拟,生长,表征,制造和新兴纳米材料和设备的集成,(c)通过利用多方面的优势,为工业和国家实验室提供竞争优势,(d)开发辅助课程,创建数据库,并为学生和行业分支机构提供工具和知识基础设施培训,以满足其未来的劳动力需求。
英文摘要
The mission of the proposed Next Generation Nanomaterial and Device Engineering (NGeNE) center is to develop a science, engineering, and technology base for the rational design of next generation computers, starting from their underlying material embodiments and fundamental physical principles. To build a chip for information processing, we must explore nanoscale logic and memory, photonics for high speed on-chip communication and thermal engineering to handle energy dissipation in 3D. The NGeNE center will address all these components, along with computational modeling, scientific training and education. Various industrial sectors such as the semiconductor chip industry, optoelectronics, mobile and wireless technology, energy, photonics, chemical, biological and packaging industry, as well as the civilian and defense infrastructure, healthcare and the energy sector will directly benefit from this effort. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.The proposed center for Next Generation Nanomaterial and Device Engineering (NGeNE) aims to form a University-Industry-Government (UIG) nexus towards the design and engineering of next generation nanomaterials and devices with an emphasis on post-CMOS computing. This will rest on four pillars: Nanoelectronics and NanoMagnetism for Logic and Memory (Computation), Thermal for power management, and Photonics for on chip communication. The research thrusts span a large phase space from novel switching schemes to non-Boolean logic, beyond silicon to advanced magnetic, thermal and photonic materials. They combine physical models with computational software, compact models and architecture, heterogeneous growth and integration, nanofabrication, characterization, testing and reliability. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.
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CAREER: Tuning Electronic Phases in Layered Complex Oxides
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批准号:1352502
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项目类别:Continuing Grant
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资助金额:$57.5万
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财政年份:2014
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负责人:Roman Engel-Herbert
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依托单位:
国内基金
海外基金
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