Tailoring the Properties of Heterostructures of Monolayers: Epitaxial Growth and Doping

定制单层异质结构的特性：外延生长和掺杂

• 批准号: 1508560
• 负责人: Lian Li
• 金额: $ 51万
• 依托单位: University of Wisconsin-Milwaukee
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-07-01 至 2017-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508560&HistoricalAwards=false
• 关键词: Tailoring; Properties; Heterostructures; Monolayers; Epitaxial

Nontechnical Description: Heterostructures of semiconductor materials, which provide enhanced electrical and optical characteristics well beyond that of each individual constituent material, have been the key enabling element in modern telecommunication, energy-efficient displays, and energy harvesting technologies. This project explores a new approach to synthesize heterostructures made of sheets of two-dimensional materials, in which atoms within a sheet form strong bonds but interactions between the layers are very weak. Atomic-resolution imaging and calculations are carried out to understand how this characteristic anisotropic bonding facilitates the growth and assembling of the single atomic layers similar to LEGO blocks, thus allowing the design and synthesis of new materials with tailored properties and functionalities beyond the limits of materials that currently exist in nature. This project provides graduate and undergraduate students interdisciplinary training in areas of materials synthesis and characterization at the atomic scale, as well as electronic structure calculations. The open source distribution of electronic structure codes continues to provide the scientific community the benefits of our team's code development efforts. An ongoing Research Experience for Teachers outreach program brings cutting-edge research on two-dimensional materials to high-school students to inspire their interest in science and engineering.Technical Description: This project aims to gain an atomic scale understanding of 1) the inherent grain boundary formation during the van der Waals (vdW) epitaxial growth of two-dimensional transition-metal dichalcogenides, and 2) the doping and bandgap engineering of their heterostructures. Leveraging the capability of integrating molecular beam epitaxy, scanning tunneling microscopy (STM) and atomic force microscopy (AFM), the intrinsic materials properties such as band offsets across lateral junctions and work functions are determined by in-situ tunneling spectroscopy and force-bias spectroscopy, respectively. Layer thickness, doping, and band gaps are further accessed by ex-situ Raman spectroscopy and photoluminescence. The information obtained by these spatially averaged spectroscopic measurements is correlated with atomic scale structural information such as the alignment of vertical junctions, interface intermixing, local strain, and disorder obtained by in-situ atomic resolution STM/AFM imaging, as well as ex-situ transmission electron microscopy. Density functional theory calculations are tightly coupled to the experimental systems of interest, addressing issues related to structural properties (e.g., energetics of the modified vdW growth and the impact of defects and impurities) and electronic properties (interface states, band offsets, charging effects at grain boundaries, and work functions). This integrated approach enables the controlled growth, bandgap engineering, and characterization of heterostructures of monolayers at the atomic scale, all necessary steps towards tailoring their electronic and optical properties.

非技术描述：半导体材料的异质结构提供了远远超过每个单独组成材料的增强的电学和光学特性，已经成为现代电信、节能显示器和能量收集技术中的关键使能元件。该项目探索了一种新的方法来合成由二维材料片制成的异质结构，其中片内的原子形成强键，但层间的相互作用非常弱。进行原子分辨率成像和计算，以了解这种特征性的各向异性键合如何促进类似于乐高积木的单原子层的生长和组装，从而允许设计和合成具有定制特性和功能的新材料，这些特性和功能超出了目前自然界中存在的材料的限制。该项目为研究生和本科生提供原子尺度材料合成和表征以及电子结构计算领域的跨学科培训。电子结构代码的开源分发继续为科学界提供我们团队代码开发工作的好处。一个正在进行的教师研究经验推广计划为高中生带来了关于二维材料的前沿研究，以激发他们对科学和工程的兴趣。技术描述：本项目旨在从原子尺度上理解1）二维过渡金属二硫属化物在货车德瓦尔斯（vdW）外延生长过程中固有的晶界形成，以及2）它们的异质结构的掺杂和带隙工程。利用分子束外延、扫描隧道显微镜（STM）和原子力显微镜（AFM）的综合能力，分别通过原位隧道光谱和力偏置光谱确定横向结和功函数的能带偏移等固有材料特性。层的厚度，掺杂，和带隙进一步访问的非原位拉曼光谱和光致发光。通过这些空间平均光谱测量获得的信息与原子尺度的结构信息，如垂直结的排列，界面混合，局部应变，和通过原位原子分辨率STM/AFM成像，以及非原位透射电子显微镜获得的无序相关。密度泛函理论计算与感兴趣的实验系统紧密耦合，解决与结构性质相关的问题（例如，改进的vdW生长的能量学以及缺陷和杂质的影响）和电子性质（界面态、能带偏移、晶界处的充电效应和功函数）。这种集成的方法能够在原子尺度上控制单层异质结构的生长，带隙工程和表征，所有必要的步骤都是为了定制它们的电子和光学特性。