CAREER: Atomic Processes in Low Temperature Molecular Beam Epitaxy of Diluted Magnetic III/V Compound Semiconductors
职业:稀释磁性 III/V 族化合物半导体的低温分子束外延原子过程
基本信息
- 批准号:0094105
- 负责人:
- 金额:$ 41.32万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-01-01 至 2006-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This CAREER project focuses on synthesis of dilute magnetic III/V compound semiconductors. These materials are expected to be used in next generation electronics-spintronics, where both the spin and charge properties of electrons perform functionality. This represents a major materi-als science challenge because incorporation of high concentrations of magnetic ions in host semi-conductors causes phase separation and destruction of material integrity. The approach to over-come this difficulty is utilization of low temperature molecular beam epitaxy. Using a combina-tion of epitaxial growth, in-situ and ex-situ measurements, direct correlation between atomic scale processes occurring during epitaxial growth and electronic/magnetic properties of the films will be investigated. Two candidate material systems, GaMnAs and GaMnN, will be examined. Epitaxial thin films will be grown by molecular beam epitaxy, and their physical properties di-rectly characterized in situ with atomic-scale precision by variable-temperature scanning tunnel-ing microscopy (STM), reflection high-energy electron diffraction and cross-sectional STM. In conjunction, structural, electrical and magnetic characteristics will be determined by ex situ tech-niques such as transmission electron microscopy, high-resolution x-ray diffraction, and magneto-transport measurement. A model of low temperature growth of diluted magnetic III/V compound semiconductors will then be developed. This may help to create new manufacturing methods that are compatible with existing compound semiconductor processing.This project also emphasizes the enhancement of educational experiences for students at both undergraduate and graduate levels. Substantial curriculum development for a new focus area in spintronics is proposed. Particularly, courses on the concepts and techniques of condensed matter at nanoscale will be developed. A sense of commitment to the education of the students also ex-tends to assisting them in finding a career where they can utilize their skills and knowledge ac-quired in school. New initiatives in industrial and educational outreach will be instituted. Spe-cifically, an industrial advisory and career committee will be formed to help foster industrially relevant activities and opportunities for students including internship and industrial research ex-periences. Outcomes of the educational effort of this project are expected to bring new concepts and techniques into the classroom and outstanding opportunities for students for future employ-ment in industry.%%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The scope of the project will expose students to challenges in materials synthesis, processing, and characterization. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***
该职业项目重点关注稀磁 III/V 族化合物半导体的合成。这些材料预计将用于下一代电子自旋电子学,其中电子的自旋和电荷特性都发挥功能。这代表了材料科学的一项重大挑战,因为在主体半导体中掺入高浓度的磁性离子会导致相分离和材料完整性的破坏。克服这一困难的方法是利用低温分子束外延。结合外延生长、原位和异位测量,将研究外延生长过程中发生的原子尺度过程与薄膜的电子/磁性特性之间的直接相关性。将检查两种候选材料系统 GaMnAs 和 GaMnN。外延薄膜将通过分子束外延生长,并通过变温扫描隧道显微镜 (STM)、反射高能电子衍射和横截面 STM 直接以原子级精度原位表征其物理特性。同时,结构、电学和磁学特性将通过非原位技术(例如透射电子显微镜、高分辨率 X 射线衍射和磁输运测量)来确定。随后将开发稀释磁性 III/V 化合物半导体的低温生长模型。这可能有助于创建与现有化合物半导体加工兼容的新制造方法。该项目还强调增强本科生和研究生水平的学生的教育经验。提出了自旋电子学新重点领域的实质性课程开发。特别是,将开发有关纳米级凝聚态物质概念和技术的课程。对学生教育的承诺也有助于帮助他们找到可以利用在学校获得的技能和知识的职业。将在工业和教育推广方面采取新举措。具体来说,将成立一个工业咨询和职业委员会,以帮助为学生培养与工业相关的活动和机会,包括实习和工业研究经验。该项目的教育工作成果预计将为课堂带来新的概念和技术,并为学生未来在工业界就业提供绝佳的机会。%%% 该项目解决了具有高度技术相关性的材料科学主题领域的基础研究问题。该项目的范围将使学生面临材料合成、加工和表征方面的挑战。该项目的一个重要特点是高度重视教育,以及研究与教育的融合。 ***
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Lian Li其他文献
Research on power decoupling of parallel virtual synchronous machine based on feedforward control
基于前馈控制的并联虚拟同步机功率解耦研究
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Lei Wang;Jifeng Liang;Si;H. Fan;Lian Li;Weiwei Kang - 通讯作者:
Weiwei Kang
Association of HSP90B1 genetic polymorphisms with efficacy of glucocorticoids and improvement of HRQoL in systemic lupus erythematosus patients from Anhui Province
安徽省系统性红斑狼疮患者HSP90B1基因多态性与糖皮质激素疗效及HRQoL改善的关系
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
Sun Xiuxiu;Li Susu;Zhang Man;Xie Qiaomei;Xu Jianhua;Liu Shengxiu;Gu Yuanyuan;Pan Faming;Tao Jinhui;Xu Shengqian;Liu Shuang;Cai Jing;Wang Deguang;Qian Long;Wang Chunhuai;Lian Li;Xiao Hui;Chen Peiling;Liang Chunmei;Fang Youbing;Zhou Qiang;Huang Hailiang;Su - 通讯作者:
Su
CloudRaid: Detecting Distributed Concurrency Bugs via Log Mining and Enhancement
CloudRaid:通过日志挖掘和增强检测分布式并发错误
- DOI:
10.1109/tse.2020.2999364 - 发表时间:
2022-02 - 期刊:
- 影响因子:7.4
- 作者:
Jie Lu;Feng Li;Chen Liu;Lian Li;Xiaobing Feng;Jingling Xue - 通讯作者:
Jingling Xue
Structural and vibrational properties of 6H-SiC(0001) surfaces studied using STM/HREELS
使用 STM/HREELS 研究 6H-SiC(0001) 表面的结构和振动特性
- DOI:
- 发表时间:
1997 - 期刊:
- 影响因子:0
- 作者:
Lian Li;C. Tindall;O. Takaoka;Y. Hasegawa;T. Sakurai - 通讯作者:
T. Sakurai
Compressive behavior of cylindrical rubber buffer confined with fiber reinforced polymer
纤维增强聚合物约束圆柱形橡胶缓冲器的压缩行为
- DOI:
10.1177/1461348418783570 - 发表时间:
2018 - 期刊:
- 影响因子:2.3
- 作者:
Shengshan Pan;Muzhou Zhao;Bassem Andrawes;Hang Zhao;Lian Li - 通讯作者:
Lian Li
Lian Li的其他文献
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{{ truncateString('Lian Li', 18)}}的其他基金
Collaborative Research: DMREF: Discovery of novel magnetic materials through pseudospin control
合作研究:DMREF:通过赝自旋控制发现新型磁性材料
- 批准号:
2323858 - 财政年份:2023
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
EFRI NewLAW: Magnetic Field Free Magneto-optics and Chiral Plasmonics with Dirac Materials
EFRI NewLAW:采用狄拉克材料的无磁场磁光和手性等离子体
- 批准号:
1741673 - 财政年份:2017
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
Tailoring the Properties of Heterostructures of Monolayers: Epitaxial Growth and Doping
定制单层异质结构的特性:外延生长和掺杂
- 批准号:
1734017 - 财政年份:2016
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
Tailoring the Properties of Heterostructures of Monolayers: Epitaxial Growth and Doping
定制单层异质结构的特性:外延生长和掺杂
- 批准号:
1508560 - 财政年份:2015
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
Epitaxial Growth and Doping of Topological Insulator Heterostructures
拓扑绝缘体异质结构的外延生长和掺杂
- 批准号:
1105839 - 财政年份:2011
- 资助金额:
$ 41.32万 - 项目类别:
Continuing Grant
Selective Doping of Antiferromagnetic Semiconductors
反铁磁半导体的选择性掺杂
- 批准号:
0706359 - 财政年份:2007
- 资助金额:
$ 41.32万 - 项目类别:
Continuing Grant
NER: Exploring Defect Controlled Ferromagnetism in Mn Doped ZnGeP2/GaP Heterojunction
NER:探索锰掺杂 ZnGeP2/GaP 异质结中的缺陷控制铁磁性
- 批准号:
0304621 - 财政年份:2003
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
SBIR Phase I: Surface Relief Diffractive Optical Elements Based on Photodynamic Azobenzene Functionalized Polymeric Materials
SBIR第一期:基于光动力偶氮苯功能化聚合物材料的表面浮雕衍射光学元件
- 批准号:
9861076 - 财政年份:1999
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
SBIR Phase II: Novel Polymeric Photorefractive Materials for Optical Image Processing
SBIR 第二阶段:用于光学图像处理的新型聚合物光折变材料
- 批准号:
9510017 - 财政年份:1996
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
Novel Polymeric Photorefractive Material for Optical Data Processing
用于光学数据处理的新型聚合物光折变材料
- 批准号:
9361272 - 财政年份:1994
- 资助金额:
$ 41.32万 - 项目类别:
Standard Grant
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